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    A TRANSISTOR Search Results

    A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    A TRANSISTOR Price and Stock

    onsemi MMBT3906WT1G

    General Purpose Bipolar Transistor PNP Bipolar Transistor
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    Onlinecomponents.com MMBT3906WT1G 60,000
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    onsemi MMBT100

    Bipolar Transistors - BJT NPN Transistor General Purpose
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    Onlinecomponents.com MMBT100 42,000
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    onsemi BC856BDW1T1G

    Bipolar Transistors - BJT PNP Transistor General Purpose
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    Onlinecomponents.com BC856BDW1T1G 27,000
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    onsemi MPSA05RA

    Bipolar Transistors - BJT NPN Transistor Medium Power
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    Onlinecomponents.com MPSA05RA 16,000
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    Microchip Technology Inc 2N3442

    Bipolar Transistors - BJT NPN Transistor
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    Onlinecomponents.com 2N3442
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    A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BD678

    Abstract: BD680 bd680 transistor A-BD678 BD676 BD682 BD682A A-BD682 BD676A
    Text: PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.


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    BD676/A BD678/A BD680/A BD682/A BD676/A-BD678/A-BD680/A-BD682/A O-126 BD675/A-BD677/A-BD679/A-BD681/A BD676/A BD678/A BD680/A BD678 BD680 bd680 transistor A-BD678 BD676 BD682 BD682A A-BD682 BD676A PDF

    BD675-BD677-BD679-BD681

    Abstract: BD681A transistor BD677 BD677 BD677 transistor BD675 BD681 transistor BD681 BD679
    Text: NPN BD675/A - BD677/A - BD679/A - BD681/A SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.


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    BD675/A BD677/A BD679/A BD681/A BD675/A-BD677/A-BD679/A-BD681/A O-126 BD676/A-BD678/A-BD680/A-BD682/A BD675/A BD677/A BD679/A BD675-BD677-BD679-BD681 BD681A transistor BD677 BD677 BD677 transistor BD675 BD681 transistor BD681 BD679 PDF

    transistor z ss

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK711 U nit in mm H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . A M H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 2. 5îg1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S . . •


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    2SK711 O-236MOD SC-59 transistor z ss PDF

    2SC5064

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR A A A P A C A - z o ü o Ud 4 U nit in mm V H F - U H F B A N D L O W NOISE A M P LIFIER A PP LIC A TIO N S. • • Low Noise Figure, High Gain. NF = l.ldB , |S2lel2 = 12dB f= lG IIz


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    SC-59 2SC5064 2SC5064 PDF

    MHQ6002

    Abstract: 2N5146 MHQ3467 MPQ6002 MPQ7053 MHQ2222 MHQ2369 MHQ2484 MHQ2907 MHQ3546
    Text: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Quad Transistors MHQ918 MHQ2222 MHQ2369 MHQ2484 NF NG NS NA 0.65 A 0.65 A 0.5 A 0.6 A 15 40 15 40 MHQ2907 MHQ3467 MHQ3546 MHQ3799 PG PS PS PA 0.65 A 0.9 A 0.5 A 0.5 A 40 40 12 60 MHQ4014 MHQ6001 MHQ6002 NS CA CA


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    MHQ918 MHQ2222 MHQ2369 MHQ2484 MHQ2907 MHQ3467 MQ3467 MQ3725 MQ6001 MQ6002 MHQ6002 2N5146 MPQ6002 MPQ7053 MHQ3546 PDF

    A 933 S transistors

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor -50V, 0.15A 2 S A 1037 A K / 2 S A 1576 A / 2 S A 1774 / 2 S A 933 A S • Features 1 ) Excellent I i f e linearity. 2) Complements the 2SC2412K/ 2SC4081 /2SC4617 / 2SC1740S. •E x te rn a l dimensions (Units: mm)


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    2SC2412K/ 2SC4081 /2SC4617 2SC1740S. 2SA1037AK 2SA1576A SC-59 SC-70 2SA933AS A 933 S transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK1875 U nit in mm H IG H FREQ U EN CY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 1.25 ±0. 1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S .


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    2SK1875 PDF

    BD 677

    Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
    Text: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E


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    O-126- BD 677 BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd PDF

    d1684

    Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
    Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249


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    2SA1520 A1522 A1523 A1524 A1525 A1526 A1527 A1528 A1536 A1537 d1684 C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460 PDF

    BD - 100 V

    Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
    Text: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E


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    O-126 BD - 100 V transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TD62382AP/F/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62382AP, TD62382F, TD62382AF 8CH LOW INPUT ACTIVE SINK DRIVER The TD62382AP/F/AF are non-inverting transistor array \A /h i/* h w v ic a A s k a a i n h + I/*s\a/ e a + i i r a + i r t n


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    TD62382AP/F/AF TD62382AP, TD62382F, TD62382AF TD62382AP/F/AF TD62382AP DIP18-P-300-2 /50mA TD62382F) PDF

    1SS TRANSISTOR

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J U n it in mm HIGH FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A TIO N S. A U D IO FREQUENCY A M P LIFIER APP LIC A TIO N S. M A X IM U M R ATINGS Ta = 25°C


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    HN3G01J 1SS TRANSISTOR PDF

    2N2192

    Abstract: 2N2193A 2N2193 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192
    Text: 2N2192, A 2N2193, A NPN SILICON TRANSISTORS, EPITAXIAL TRANSISTORS NPN SILIC IU M , EP IT A X I A UX - LF large signal amplification i 40 V 2N 2192,A 1 50 V 2N 2193,A A m plification BF grands signaux V CEO * Medium current switching Commutation à moyen gourant


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    150mA) 2N2192 2N2193 2N2193A 2N2192A 2193A SCHEMA VTP2N 2192 2193 t 2n 2192 PDF

    KTA817

    Abstract: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE KTC1627A KTA817A KTC1627
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTC1627A APPLICATIONS ) • D r i v e r S ta g e A m p lif ie r A p p lic a tio n s. ■ Voltage A m p lifie r A p p lic a tio n s. ( FEA TU R ES ) • Com plem entary to K T A 8 1 7 A • D riv e r S ta g e A p p lic atio n of 30 to 35 W a tts A m p lifie rs


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    KTC1627A KTA817 75MAX. 80MAX. 60MAX. 92MOD SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE KTC1627A KTA817A KTC1627 PDF

    transistor c111

    Abstract: C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600
    Text: 112 A* O p * t o is W A, l a t o o r s~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR


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    MCT210 MCT26 MCT66 transistor c111 C111 transistor transistor c1124 C1116 transistor MCL610 c1116 MCL611 c1117 C1119 mcl600 PDF

    BC113

    Abstract: No abstract text available
    Text: CONSUMER TRANSISTORS continued < _§ X CD E u > > CD O a. """a) o ’ o o n o @ Li. a. >• UJ ll.c PACKAGE P O L A R ITY DESCRIPTION (A )0 3 3 A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5


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    PDF

    mcl610

    Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
    Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR


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    MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 PDF

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


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    MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 PDF

    H11AV1A

    Abstract: H11AV1 H11AV2 H11AV2A h11av2 equivalent
    Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


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    H11AV1 H11AV2 H11AV1A H11AV2A h11av2 equivalent PDF

    H11AV2

    Abstract: H11AV1A H11AV1M
    Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


    Original
    H11AV1 H11AV2 P01101866 CR/0117 E90700, H11AV1A H11AV1M PDF

    2N1305 TEXAS INSTRUMENTS

    Abstract: 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711
    Text: Germanium Transistors T ype C a se No. C o *" " 0 0 c <u o « o “ NPN 2N388 T05 A General 2N388A T05 A Purpose 2N1302 T05 A and Switching 2N1304 T05 A 2N1305 T05 A 2N1308 T05 A S P E C IA L C h a ra c te ris tic s M axim u m R a tin g s at 25°C amb. •¿z 0>


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    2N388 2N388A 2N1302 2N1304 2N1306 2N1308 2G302 TIXM107/8 2N1305 TEXAS INSTRUMENTS 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711 PDF

    LT 6242

    Abstract: No abstract text available
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP624,-2,-4 TENT A T I V E DA T A PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in m m The T O S H I B A TLP624, -2 and -4 consist of a g a l l i u m a r s e n i d e infrared emitting diode op t i c a l l y coupled to a photo-transistor.


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    TLP624 TLP624, TLP624-2 TLP62 CLA326 fr39dU LT 6242 PDF

    LF marking transistor

    Abstract: 2SA1037AK transistor marking LF
    Text: Transistors I UML1N Low-frequency transistor UML1N ► Absolute m a x im u m ra tin g s T a = 25°C •F e a tu re s 1 ) T h e 2 S A 1 0 3 7 A K a n d a d io d e a re h o u s e d in d e p e n d e n tly in a Parameter U M T p a cka g e . Symbol Coi lector-base voltage


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    2SA1037AK 50mA/â 100MHz Vcb--12V, 100mA LF marking transistor transistor marking LF PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1446 In te rn a tio n a l IO R Rectifier IRHI7360SE R E P E T I T I V E A V A L A N C H E A N D dv/dt R A T E D HEXFET TRANSISTOR N -C H A N N E L _ S IN G L E E V E N T E F F E C T S E E R A P H A R D


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    IRHI7360SE 10ryllium. PDF