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    A012409 Datasheets Context Search

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    mosfet n3

    Abstract: No abstract text available
    Text: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices


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    PDF LP0701 DSFP-LP0701 A012409 mosfet n3

    Untitled

    Abstract: No abstract text available
    Text: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


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    PDF VP2106 VP2106 DSFP-VP2106 A012409

    fet sot-89 marking code

    Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    PDF TN2504 125pF DSFP-TN2504 A012409 fet sot-89 marking code FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504

    sivp

    Abstract: vp0109
    Text: VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VP0109 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    PDF VP0109 DSFP-VP0109 A012409 sivp

    SIVP

    Abstract: VP2106
    Text: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    PDF VP2106 VP2106 DSFP-VP2106 A012409 SIVP

    Untitled

    Abstract: No abstract text available
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


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    PDF TN2504 125pF DSFP-TN2504 A012409

    a0124

    Abstract: No abstract text available
    Text: VP2110 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2110 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    PDF VP2110 DSFP-VP2110 A012409 a0124

    sivp

    Abstract: SIVP01 vp0106
    Text: VP0106 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VP0106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    PDF VP0106 DSFP-VP0106 A012409 sivp SIVP01