NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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OCR Scan
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC
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OCR Scan
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SMJ416160,
SMJ418160
1048576-WORD
16-BIT
SGMS720A
41x160-60
41x160-70
41x160-80
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY644071EG-10
304-WORD
64-BIT
THMY644071EG
TC59S6416FT
THMY644071
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PDF
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TC5116400
Abstract: tc5116400csj 300D1 toshiba RAS-25
Text: INTEGRATED TOSHIBA TO SH IBA M O S DIGITAL NTEGRATED CIRCUIT CIRCUIT TECHNICAL T C 5 1 16 4 0 0 C S J / C S T - 4 0 T C 5 1 1 6 4 0 0 C S J / C S T - 50 T C 5 1 1 6 4 0 0 CSJ / C S T * 60 DATA SILICON GATE C M O S TENTATIVE D ATA 4,194,304 W O R D x 4 BIT D Y N A M IC R A M
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OCR Scan
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TC5116400CSJ/CST
300mil)
400CSJ/C
TC5116400
CSJ/CST-40
CSJ/CST-50
tc5116400csj
300D1
toshiba RAS-25
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PDF
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TLCS-47
Abstract: No abstract text available
Text: TOSHIBA TMP47P452VN, TMP47P452W For program operation, the programming is achieved by using with EPROM programm er TMM2764AD type and adapter socket (BM1120, BM1121). CMOS 4-Bit Microcontroller TMP47P452VN, TMP47P452VF The 47P452V is the OTP microcontroller with 32kbits PROM.
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OCR Scan
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TMP47P452VN,
TMP47P452W
TMP47P452VF
47P452V
32kbits
TMM2764AD
BM1120,
BM1121)
QFP44
TLCS-47
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PDF
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r2a3
Abstract: r1a10 M1367 M4589
Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.
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OCR Scan
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THMY728010BEG-80L
THMY728010BEG
608-word
72-bit
TC59S6408BFTL
72-bit
r2a3
r1a10
M1367
M4589
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PDF
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Untitled
Abstract: No abstract text available
Text: TL16PNP100A STANDALONE PLUG-AND-PLAY PnP CONTROLLER SLLS200B - MARCH 1995 - REVISED MARCH 1996 PnP Card Autoconfiguration Sequence Compliant Supports TVvo Logical Devices Decodes 10-Bit I/O Address Location With Programmable 1-, 2-, 4-, 8-, 16-Byte Block
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OCR Scan
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TL16PNP100A
SLLS200B
10-Bit
16-Byte
ST93C56/66
44-Pin
48-Pin
i--11
h--11
16-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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OCR Scan
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TC51V16400BST-60/70
51V16400B
TC51V16400BST
300mil)
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PDF
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2269H
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
THMY7216C1EG)
2269H
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PDF
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2332 eprom
Abstract: PIN-20 IC DIAGRAM 2332 rom 2732A eprom
Text: TMS2332 4096-WORD BY 8-BIT READ-ONLY MEMORY SEPTEMBER 1984 - REVISED NOVEMBER 1985 4 0 9 6 X 8 Organization N PACKAGE All Inputs and Outputs TTL Compatible TOP VIEW A 7 C 1 ^ 2 4 3 v Cc A6£ 2 23 3 A 8 A5 £ 3 22 > 9 Fully Static (No Clocks. No Refresh)
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OCR Scan
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TMS2332
4096-WORD
2332 eprom
PIN-20 IC DIAGRAM
2332 rom
2732A eprom
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PDF
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TCK-1000
Abstract: D038 toshiba M7
Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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Y6480F1
BEG-80
64-BIT
THMY6480F1BEG
608-word
TC59S6408BFT
64-bit
THMY6480F1
TCK-1000
D038
toshiba M7
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PDF
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SM81600E
Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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Original
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IS42SM81600E
IS42SM16800E
IS42SM32400E
IS42RM81600E
IS42RM16800E
IS42RM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
SM81600E
IS42SM16800E-7TLI
IS42SM32400E-7T
IS42SM16800E-7BLI
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PDF
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IS42VS16100E
Abstract: 42VS16100E IS42VS16100E-75BLI
Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11
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Original
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IS42VS16100E
4000-mil
60-ball
400-mil
IS42VS16100E
42VS16100E
IS42VS16100E-75BLI
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70
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OCR Scan
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TMS416160,
TMS416160P
576-WORD
16-BIT
SMKS660-DECEMBER
416160/P-60
416160/P-70
416160/P-80
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PDF
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|
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AS4SD32M16
Abstract: No abstract text available
Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive
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Original
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AS4SD32M16
512Mb:
192-cycle
-40oC
-55oC
125oC
AS4SD32M16
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PDF
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Untitled
Abstract: No abstract text available
Text: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability
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Original
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AS4SD8M16
096-cycle
-40oC
-55oC
125oC
AS4SD8M16
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PDF
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IS42S32400D
Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Text: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed
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Original
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IS42S32400D
128-MBIT
128Mb
rS32400D-7TI
86-Pin
IS42S32400D-7TLI
IS42S32400D-7BI
IS42S32400D
42S32400D
is42s32400d-6bli
IS42S32400D-7TLI
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PDF
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DDR200
Abstract: DDR266A DDR266B IBMN612404GT3B IBMN612804GT3B IBMN62540 IBMN62580 128MB PC266
Text: IBMN612404GT3B IBMN612804GT3B 128Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 * Values are nominal (exact tCK should be used).
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Original
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IBMN612404GT3B
IBMN612804GT3B
128Mb
DDR266A
DDR266B
DDR200
06K0566
F39350B
DDR200
DDR266A
DDR266B
IBMN612404GT3B
IBMN612804GT3B
IBMN62540
IBMN62580
128MB PC266
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PDF
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Untitled
Abstract: No abstract text available
Text: . IBM13M64734CCA 64M x 72 2-Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 64Mx72 Synchronous DRAM DIMM • Performance: -260 Device Latency fCK Clock Frequency tAC Clock Access Time 2 -360 -360 Units
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Original
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IBM13M64734CCA
168-Pin
64Mx72
66/100MHz
PC100
09K3884
F38744
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PDF
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NT5DS8M16FS-5T
Abstract: NT5DS8M16FS-6K NT5DS8
Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T
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Original
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NT5DS8M16FT
NT5DS8M16FS
128Mb
NT5DS8M16FS-5T
NT5DS8M16FS-6K
NT5DS8
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PDF
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ba1s
Abstract: No abstract text available
Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data
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Original
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IS43LR32400E
32Bits
IS43LR32400E
Figure38
90Ball
-25oC
4Mx32
IS43LR32400E-6BLE
ba1s
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PDF
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Nanya nt5ds8m16fs
Abstract: NT5DS8M16FS NT5DS8M16FT-5TI NT5DS8M16FS-5T DDR333 DDR400 NT5DS8M16 NT5DS8M16FT-6KI NT5DS8M16FT
Text: NT5DS8M16FT-5TI NT5DS8M16FS-5TI NT5DS8M16FT-6KI NT5DS8M16FS-6KI 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8
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Original
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NT5DS8M16FT-5TI
NT5DS8M16FS-5TI
NT5DS8M16FT-6KI
NT5DS8M16FS-6KI
128Mb
Nanya nt5ds8m16fs
NT5DS8M16FS
NT5DS8M16FT-5TI
NT5DS8M16FS-5T
DDR333
DDR400
NT5DS8M16
NT5DS8M16FT-6KI
NT5DS8M16FT
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PDF
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NT5DS8M16FS-5T
Abstract: NT5DS8M16FS-6K NT5DS8M16 NT5DS8M16FS
Text: NT5DS8M16FT NT5DS8M16FS 128Mb DDR SDRAM Features • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Burst lengths: 2, 4, or 8 • CAS Latency: 2 & 2.5 for 6K, 2, 2.5, & 3 for 5T
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Original
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NT5DS8M16FT
NT5DS8M16FS
128Mb
NT5DS8M16FS-5T
NT5DS8M16FS-6K
NT5DS8M16
NT5DS8M16FS
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PDF
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NT5SV8M16FS
Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
Text: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •
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Original
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NT5SV8M16FT-6KI
NT5SV8M16FS-6KI
NT5SV8M16FT-75BI
NT5SV8M16FS-75BI
128Mb
PC166
PC133
NT5SV8M16FS
Nanya NT5SV8M16FS
NT5SV8M16FS-75BI
Nanya NT5SV8M16FS-75Bi
NT5SV8M16FS-6KI
NT5SV8M16FT
NT5SV8M16FT-6KI
nt5sv8m16fs-6k
54-PIN
NT5SV8M16FT-6K
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PDF
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