SFP EVAL BOARD
Abstract: 2N7002 ADN2841 ADN2860 FDV301N
Text: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 VSS 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1
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Original
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ADN2860
512-position
128-position
CP-24
D03615-0-7/04
SFP EVAL BOARD
2N7002
ADN2841
ADN2860
FDV301N
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PDF
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ADN2860
Abstract: rdac SFP EVAL BOARD 2N7002 ADN2841 FDV301N
Text: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1 9 BITS
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Original
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ADN2860
512-position
128-position
MO-220-VGGD-2
24-Lead
CP-24-1)
ADN2860ACPZ25-RL71
ADN2860ACPZ250-RL71
ADN2860-EVAL
D03615-0-11/04
ADN2860
rdac
SFP EVAL BOARD
2N7002
ADN2841
FDV301N
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PDF
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2N7002
Abstract: ADN2841 ADN2860 ADN2860ACPZ25-RL7 FDV301N AD2860
Text: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1 9 BITS
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Original
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ADN2860
512-position
128-position
MO-220-VGGD-2
24-Lead
CP-24-1)
ADN2860ACPZ25-RL7
ADN2860ACPZ250-RL71
2N7002
ADN2841
ADN2860
FDV301N
AD2860
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PDF
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Untitled
Abstract: No abstract text available
Text: 3-Channel Digital Potentiometer with Nonvolatile Memory ADN2860 32 BYTES RDAC EEPROM DGND SCL SDA AD0 AD1 I2C SERIAL INTERFACE DATA CONTROL A0_EE COMMAND DECODE LOGIC A1_EE RESET WP POWER-ON RESET ADDRESS DECODE LOGIC RDAC0 A0 W0 9 BITS RDAC1 B0 A1 W1 9 BITS
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Original
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ADN2860
512-position
128-position
MO-220-VGGD-2
24-Lead
CP-24-1)
ADN2860ACPZ25-RL7
ADN2860ACPZ250-RL71
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PDF
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Untitled
Abstract: No abstract text available
Text: CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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Original
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CM1293
CM1293
MSOP-10
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PDF
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CM1293-04SO
Abstract: A1 D036 CM1293-02SR CM1293 D032 D033 sot23-5 footprint
Text: CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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Original
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CM1293
CM1293
MSOP-10
CM1293-04SO
A1 D036
CM1293-02SR
D032
D033
sot23-5 footprint
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PDF
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A1 D036
Abstract: No abstract text available
Text: TO SH IB A THMY721661EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY721661EG-10
216-WORD
72-BIT
THMY721661EG
TC59S6408FT
72-bit
THMY721661
A1 D036
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SH IB A THMY721661EG-10 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY721661EG-10
216-WORD
72-BIT
THMY721661EG
TC59S6408FT
72-bit
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY7216C1BEG-80L
216-WORD
72-BIT
THMY7216C1BEG
TC59S6408BFT
72-bit
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PDF
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PC133-SDRAM
Abstract: No abstract text available
Text: T O S H IB A THMY7232G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY7232G1EG-75
432-WORD
72-BIT
THMY7232G1EG
TC59SM708FT
72-bit
168-pin
PC133-SDRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY7232G1 EG-80#-80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT/FTL DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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432-WORD
72-BIT
THMY7232G1
EG-80#
THMY7232G1EG
TC59SM708FT/FTL
72-bit
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PDF
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tfk 136
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6416C1BEG-80L
216-WORD
64-BIT
THMY6416C1BEG
TC59S6408BFT
64-bit
THMY6416C1BEG)
tfk 136
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6416E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416E1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6416E1
BEG-80
216-WORD
64-BIT
THMY6416E1BEG
TC59S6408BFT
64-bit
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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MY7216E1
BEG-80
216-WORD
72-BIT
THMY7216E1BEG
TC59S6408BFT
72-bit
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PDF
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D018
Abstract: D019 D032
Text: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.
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OCR Scan
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THMY51E10C70
THMY51E10C70,
THMY51E10C75,
THMY51E10C80
864-word
72-bit
TC59SM804CFT
D018
D019
D032
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PDF
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TC59SM716FT
Abstract: No abstract text available
Text: T O S H IB A THMY6480H1EG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480H1EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6480H1
EG-80
608-WORD
64-BIT
THMY6480H1EG
TC59SM716FT
64-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1EG-80H TENTATIVE TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6416C1EG-80H
216-WORD
64-BIT
THMY6416C1EG
TC59S6408FT
64-bit
cycles16C1EG)
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PDF
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D033
Abstract: A1 D036
Text: T O S H IB A THMY6432G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6432G1EG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6432G1EG-75
432-WORD
64-BIT
THMY6432G1EG
TC59SM708FT
64-bit
168-pin
D033
A1 D036
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THMY648071 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648071BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY648071
BEG-80
64-BIT
THMY648071BEG
608-word
TC59S6408BFT
64-bit
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6480D1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480D1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFTL DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6480D1BEG-80L
608-WORD
64-BIT
THMY6480D1BEG
TC59S6408BFTL
64-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY6480F1
BEG-80
608-WORD
64-BIT
THMY6480F1BEG
TC59S6408BFT
64-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THMY641691 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY641691EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708FT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY641691
EG-80#
THMY641691EG
216-word
64-bit
TC59SM708FT
64-bit
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PDF
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EG 8010
Abstract: D018 D019 D032 D051 TC59S6408BFT THMY648071BEG
Text: TO SHIBA THMY648071 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648071BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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OCR Scan
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THMY648071
BEG-80
608-WORD
64-BIT
THMY648071BEG
TC59S6408BFT
64-bit
EG 8010
D018
D019
D032
D051
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PDF
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