GDIP1-T14
Abstract: DG200AA
Text: SCOPE: Dual, SPST, CMOS, TTL-Compatible Analog Switch Device Type: -1 Generic Number: DG200AA x /883B Case Outline(s). Outline Letter Mil-Std-1835 K GDIP1-T14 or CDIP2-T14 A MACY1-X10 Case Outline 14 LEAD CERDIP 10 Pin TO-100 Package Code J14 A10 Absolute Maximum Ratings
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DG200AA
/883B
Mil-Std-1835
GDIP1-T14
CDIP2-T14
MACY1-X10
O-100
Mil-Std-883.
Mil-Std-883
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ICM7332
Abstract: ICM7352 ICM7372 8 Bits 12 Bits
Text: ICM7372/7352/7332 ICmic DUAL 12/10/8-BIT VOLTAGE-OUTPUT DACS with Serial Interface and Adjustable Output Offset IC MICROSYSTEMS FEATURES • 12/10/8-Bit Monotonic Dual DAC in 16 Lead QSOP Package • Adjustable Output Offset • Wide Output Voltage Swing •
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ICM7372/7352/7332
12/10/8-BIT
ICM7372,
ICM7352
ICM7332
12-Bit,
10-Bit
16-pin
ICM7372
8 Bits
12 Bits
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M5M4V16S20CTP
Abstract: M5M4V16s30 M5M4V16S30CTP M5M4V16S20
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S20CTP-10, -12, -15 Jan. '97 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz
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M5M4V16S20CTP-10,
2097152-WORD
100MHz
83MHz
67MHz
/64ms
400-mil,
44-pin
44pin
M5M4V16S20CTP
M5M4V16s30
M5M4V16S30CTP
M5M4V16S20
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M5M4V16s30
Abstract: M5M4V16S30CTP-10 M5M4V16S30CTP10 M5M4V16S30CTP M5M4V16S30CTP-12 M5M4V16S30CTP12
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S30CTP-10, -12, -15 Jan. '97 16M (2-BANK x 1048576-WORD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz
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M5M4V16S30CTP-10,
1048576-WORD
100MHz
83MHz
67MHz
/64ms
400-mil,
44-pin
44pin
M5M4V16s30
M5M4V16S30CTP-10
M5M4V16S30CTP10
M5M4V16S30CTP
M5M4V16S30CTP-12
M5M4V16S30CTP12
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M5M4V16S40
Abstract: M5M4V16S40CTP M5M4V16S40CTP-10
Text: MITSUBISHI LSIs SDRAM Rev. 1. 2 M5M4V16S40CTP-10, -12, -15 April '97 16M (2-BANK x 524288-WORD x 16-BIT) Synchronous DRAM Some of contents are subjected to change without notice. The M5M4V16S40CTP is a 2-bank x 524288-word x 16-bit Synchronous DRAM, with LVTTL interface. All inputs and
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M5M4V16S40CTP-10,
524288-WORD
16-BIT)
M5M4V16S40CTP
16-bit
100MHz,
100MHz
83MHz
M5M4V16S40
M5M4V16S40CTP-10
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solar calculator
Abstract: 30076 Calculator digital EM34014A EM34014 M100 M300 16340 battery
Text: EM34014A 10/1210/12-DIGIT CALCULATOR BATTERY / SOLAR / DUAL POWER TYPE Product Specification DOC. VERSION 1.0 ELAN MICROELECTRONICS CORP. April 2010 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.
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EM34014A
10/1210/12-DIGIT
solar calculator
30076
Calculator digital
EM34014A
EM34014
M100
M300
16340 battery
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB646F and MC-458CB646LFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M SDRAM: µPD4564841 are assembled, and the MC-458CB646EFB is a 8,388,608 words by 64
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MC-458CB646
64-BIT
MC-458CB646F
MC-458CB646LFA
PD4564841
MC-458CB646EFB
PD45128163
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M5M4V16s30
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 J a n . '97 M5M4V16S20CTP-10, -12, -15 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION The M5M4V16S20CTP is a 2-bank x 2097152-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and
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M5M4V16S20CTP-10,
2097152-WORD
M5M4V16S20CTP
100MHz,
100MHz
83MHz
67MHz
M5M4V16s30
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CA726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CA726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 64M
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MC-454CA726
72-BIT
MC-454CA726
uPD4564163
M168S-50A95
MC-454CA726LFA]
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AAK2A
Abstract: M5M4V16s30 M5M4V16S30CTP
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 Jan. '97 M5M4V16S30CTP-10, -12, -15 16M (2-BANK x 1048576-WQRD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M4V16S30CTP is a 2-bank x 1048576-word x 8bit Synchronous DRAM, with LVTTL interface. A ll inputs
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M5M4V16S30CTP-10,
1048576-WQRD
M5M4V16S30CTP
1048576-word
100MHz,
100MHz
83MHz
67MHz
AAK2A
M5M4V16s30
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev. 1.2 M 5 M 4 V 1 6 S 4 0 C T P -1 0, -12, -1 5 Aprii ’97 16M (2-BANK x 524288-WORD x 16-BIT) Synchronous DRAM Some of contents are subjected to change without notice. PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M4V16S40CTP is a 2-bank x 524288-word x 16-bit
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524288-WORD
16-BIT)
M5M4V16S40CTP
16-bit
100MHz,
44chronous
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC726 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M
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MC-454AC726
72-BIT
MC-454AC726
uPD4516821
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max100MHZ
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458AB64S 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-458AB64S is a 8,388,608 words by 64 bits synchronous dynamic RAM module(Small Outline DIMM) on which 8 pieces of 64 M SDRAM : ¿/PD4564821 are assembled.
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MC-458AB64S
64-BIT
MC-458AB64S
uPD4564821
max100MHZ
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TCL271
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT / MC-458BA72 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T he M C-458B A72 is a 8,388,608 w ords b y 72 bits synchrono us dyna m ic RAM m odule on which 9 pieces of 64 M SD R A M : ¿¿PD4564621 are assem bled.
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MC-458BA72
72-BIT
MC-458BA72
uPD4564621
MC-4588A72-A10
MC-458BA72-A12
TCL271
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MC452AB645F-A10
Abstract: MC-452AB645-A12
Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-452AB645 2M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AB645 is a 2,097,152 words by 64 bits synchronous dynamic RAM module on which 8 pieces of
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MC-452AB645
64-BIT
MC-452AB645
uPD4516821
MC-452AB645-A80
MC-452AB645-A10
MC452AB645F-A10
MC-452AB645-A12
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MC-454AC724
Abstract: MC-454AC724F-A10 MC-454AC724F-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644-A67 PD4516 PD4516821
Text: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-454AC724 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M
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MC-454AC724
72-BIT
MC-454AC724
uPD4516821
L427S25
4E752£
MC-454AC724F-A10
MC-454AC724F-A67
MC-454AD644-A10
MC-454AD644-A12
MC-454AD644-A67
PD4516
PD4516821
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454CB646 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M
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MC-454CB646
64-BIT
MC-454CB646
uPD4564163
MC-454CB646LFA]
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-454AA725
72-BIT
MC-454AA725
uPD4516421
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
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MC-454AC725
72-BIT
MC-454AC725
uPD4516821
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MC-454AD646
Abstract: MC-454AD646F-A10 MC-454AD646F-A80 168Pin DIMM NEC
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AD646 4 M-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE UNBUFFERED TYPE Description The MC-454AD646 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 16 M SDRAM : ,uPD4516821 A Revision B are assembled.
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MC-454AD646
64-BIT
MC-454AD646
PD4516821A
MC-454AD646-A
MC-454AD646F-A10
MC-454AD646F-A80
168Pin DIMM NEC
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-458DA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-458DA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M
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MC-458DA724
72-BIT
MC-458DA724
uPD4564841
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CD644 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD644 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of
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MC-4516CD644
16M-WORD
64-BIT
MC-4516CD644
uPD4564841
M168S-50A54
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C-458C
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE ★ Description The MC-458CB646F and MC-458CB646LFA are 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M SDRAM: ,uPD4564841 are assembled, and the MC-458CB646EFB is a 8,388,608 words by 64
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MC-458CB646
64-BIT
MC-458CB646F
MC-458CB646LFA
uPD4564841
MC-458CB646EFB
uPD45128163
13049EJ6V0D
MC-458CB646EFB
C-458C
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AC726 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC726 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M
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MC-454AC726
72-BIT
MC-454AC726
uPD4516821A
MC-454AC726-A80
MC-454AC726-A10robots
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