e 634 transistor
Abstract: No abstract text available
Text: UMA10N FMA10A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMA1 ON and FMA10A; A10 • package contains two interconnected PNP digital transistors (DTA113ZKA)
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UMA10N
FMA10A
SC-74A)
FMA10A;
DTA113ZKA)
SC-70)
SC-59)
UMA10N
UMA10N,
e 634 transistor
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Transistor GE 44
Abstract: tyco igbt
Text: V23990-P188-A10 flow PIM 2, 1200V, 36A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung
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V23990-P188-A10
D81359
Transistor GE 44
tyco igbt
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V23990-P548-A10
Abstract: p548 tyco igbt 1200V in7002 tyco igbt
Text: V23990-P548-A10 preliminary data version 0603 flow PIM 0, 1200V Maximum Ratings / Höchstzulässige Werte Parameter Condition Input Rectifier Bridge Gleichrichter Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung Forward current per diode
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V23990-P548-A10
40-limited
D81359
V23990-P548-A10
p548
tyco igbt 1200V
in7002
tyco igbt
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tyco igbt
Abstract: igbt tyco Transistor GE 44
Text: V23990-P186-A10 flow PIM 2, 600V, 75A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung
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V23990-P186-A10
D81359
tyco igbt
igbt tyco
Transistor GE 44
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tyco igbt
Abstract: D8135 igbt tyco
Text: V23990-P185-A10 flow PIM 2, 600V, 50A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung
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V23990-P185-A10
D81359
tyco igbt
D8135
igbt tyco
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micrologix 1400 error codes
Abstract: 1763-nc01 pinout micrologix 1100 error codes 1763-nc01 17-BIT encoder tamagawa Allen-Bradley micrologix 1400 cable pinout Micrologix 1400 terminal wiring diagram Micrologix 1400 KINETIX 300 WITH BRAKE WIRING DIAGRAM 2090-XXLF-TC116
Text: User Manual Kinetix 3 Component Servo Drives Catalog Numbers 2071-AP0, 2071-AP1, 2071-AP2, 2071-AP4, 2071-AP8, 2071-A10, 2071-A15 Important User Information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. Safety
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2071-AP0,
2071-AP1,
2071-AP2,
2071-AP4,
2071-AP8,
2071-A10,
2071-A15
RA-DU002,
2071-UM001A-EN-P
micrologix 1400 error codes
1763-nc01 pinout
micrologix 1100 error codes
1763-nc01
17-BIT encoder tamagawa
Allen-Bradley micrologix 1400 cable pinout
Micrologix 1400 terminal wiring diagram
Micrologix 1400
KINETIX 300 WITH BRAKE WIRING DIAGRAM
2090-XXLF-TC116
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Untitled
Abstract: No abstract text available
Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
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SN74TVC3010
10-BIT
SCDS088B
SN74TVC3010DBQR
SN74TVC3010DGVR
SN74TVC3010DW
SN74TVC3010DWR
SN74TVC3010PWR
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SN74TVC3010
Abstract: SN74TVC3010DBQR SN74TVC3010DGVR SN74TVC3010DW SN74TVC3010DWR SN74TVC3010PWR TVC3010
Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088C – APRIL 1999 – REVISED JANUARY 2001 D Designed to be Used in Voltage-Limiting DBQ, DGV, DW, OR PW PACKAGE TOP VIEW Applications D 6.5-Ω On-State Connection Between Ports D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
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SN74TVC3010
10-BIT
SCDS088C
SN74TVC3010
SN74TVC3010DBQR
SN74TVC3010DGVR
SN74TVC3010DW
SN74TVC3010DWR
SN74TVC3010PWR
TVC3010
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1746-OW16
Abstract: 1746-Im16 1746-C9 1746-NO4I ULCS61ML5 1747-AIC 1746-A7 1746-P2 1746-P4 1746-C7
Text: ALLEN-BRADLEY SLC 500 Modular Chassis and Power Supplies Chassis Catalog Numbers: 1746-A4, -A7, -A10, and -A13 Power Supply Catalog Numbers: 1746-P1, -P2, -P3, -P4, and -P5 Product Data 88Ć213Ć19 88Ć213Ć39 SLC 500 modular chassis and power supplies provide flexibility in system
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500TM
1746-A4,
1746-P1,
10-slot,
13-slot
1746-OW16
1746-Im16
1746-C9
1746-NO4I
ULCS61ML5
1747-AIC
1746-A7
1746-P2
1746-P4
1746-C7
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Untitled
Abstract: No abstract text available
Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
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SN74TVC3010
10-BIT
SCDS088B
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Untitled
Abstract: No abstract text available
Text: SSRAM Austin Semiconductor, Inc. 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP A6 A7 CE\ CE2 NC NC WEH\ WEL\ CE2\ VCC VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A8 A9 FEATURES MARKING -8 -9 -10 A10 NC NC VCCQ VSSQ NC
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AS5SS256K18
AS5SS256K18
AS5SS256K18DQ-8/IT
-40oC
-55oC
125oC
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Untitled
Abstract: No abstract text available
Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
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SN74TVC3010
10-BIT
SCDS088B
SCDA006
SZZU001B,
SDYU001N,
SCET004,
SCAU001A,
000914/08302000/TXII/08302000/sn74tvc3010
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Untitled
Abstract: No abstract text available
Text: SN74TVC3010 10-BIT VOLTAGE CLAMP SCDS088B – APRIL 1999 – REVISED MAY 2000 D Designed to be Used in Voltage-Limiting Applications DBQ, DGV, DW, OR PW PACKAGE TOP VIEW D 6.5-Ω On-State Connection Between Ports D D D GND A1 A2 A3 A4 A5 A6 A7 A8 A9 A10
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SN74TVC3010
10-BIT
SCDS088B
SCDA006
SZZU001B,
SDYU001M,
\\Roarer\root\data13\imaging\BITTING\cpl
mismatch\20000817\08162000
3\TXII\08032000\s
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MAX17108E
Abstract: MAX17108 TRANSISTOR y9 Y1Y10 MAX17108ETI TRANSISTOR Y10 VCOM LCD a7a10 tft type lcd driver
Text: 19-4347; Rev 0; 10/08 KIT ATION EVALU E L B A IL AVA 10-Channel High-Voltage Scan Driver and VCOM Amplifier for TFT LCD Panels The MAX17108 includes a 10-channel high-voltage level-shifting scan driver and a VCOM amplifier. The device is optimized for thin-film transistor TFT liquidcrystal display (LCD) applications.
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10-Channel
MAX17108
28-pin,
T2855-6
MAX17108E
TRANSISTOR y9
Y1Y10
MAX17108ETI
TRANSISTOR Y10
VCOM LCD
a7a10
tft type lcd driver
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1800mhz rf frequency power amplifier circuit
Abstract: RF2126
Text: RF2126 HIGH POWER LINEAR AMPLIFIER Typical Applications • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • PCS Communication Systems Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT
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RF2126
RF2126
1800MHz
2500MHz.
2450MHz
1800mhz rf frequency power amplifier circuit
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TRANSISTOR 0835
Abstract: transistor A10 a10 transistor
Text: TSB1424A Low Vcesat PNP Transistor SOT-223 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -40V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD882S
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TSB1424A
OT-223
-100mA
TSD882S
TSB1424ACW
TRANSISTOR 0835
transistor A10
a10 transistor
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Untitled
Abstract: No abstract text available
Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2907A
350mW,
OT-23
MIL-STD-202,
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TRANSISTOR code marking 1P 3
Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23
Text: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2222A
300mW,
OT-23
MIL-STD-202,
TRANSISTOR code marking 1P 3
marking code 1p
TRANSISTOR MARKING CODE 1P
MMBT2222A
transistor 1P
Transistor MARKING 1P
marking transistor 1p 1
1p transistor
1p transistor sot23
marking 1p transistor sot23
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a10 transistor
Abstract: marking code 2f MMBT2907A sot 23 marking code NT MARKING NT SOT23
Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2907A
350mW,
OT-23
MIL-STD-202,
a10 transistor
marking code 2f
MMBT2907A
sot 23 marking code NT
MARKING NT SOT23
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Untitled
Abstract: No abstract text available
Text: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2222A
300mW,
OT-23
MIL-STD-202,
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HM1-65642/883
Abstract: 80C86 80C88 HM65642C
Text: HM-65642/883 S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell
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HM-65642/883
MIL-STD883
150ns
HM1-65642/883
80C86
80C88
HM65642C
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UMA10N
Abstract: sot marking a10 DTA113Z FMA10A T148 64R2
Text: UMA10N / FMA10A Transistors General purpose dual digital transistors UMA10N / FMA10A !Equivalent circuits 1.3 2.0 (3) (1) (6) (2) 0.2 (4) UMA10N 0.65 0.65 !External dimensions (Units : mm) !Features 1) Two DTA113Z chips in a UMT package. 1.25 R1 (1) R2 R2
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UMA10N
FMA10A
UMA10N
DTA113Z
SC-88A
OT-353
sot marking a10
FMA10A
T148
64R2
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4Mx1
Abstract: CA211 EDI414096C a719 A109 amplifier
Text: ^EDI _ 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell,
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EDI414096C
EDI414096C
A109-
4Mx1
CA211
a719
A109 amplifier
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Untitled
Abstract: No abstract text available
Text: UMA10N / FMA10A Transistors General purpose dual digital transistors UMA10N / FMA10A !Equivalent circuits 1.3 2.0 (3) (1) (5) (2) 0.2 (4) UMA10N 0.65 0.65 !External dimensions (Units : mm) !Features 1) Two DTA113Z chips in a UMT package. 1.25 R1 (1) R2 R2
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UMA10N
FMA10A
UMA10N
DTA113Z
SC-88A
OT-353
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