A114 MOSFET Search Results

A114 MOSFET Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

A114 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
WDFN8 Abstract: NTTFS3A08P Text: NTTFS3A08P Product Preview Power MOSFET −20 V, −14 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114	Original	NTTFS3A08P JESD22-A114 NTTFS3A08P/D WDFN8	PDF
Untitled Abstract: No abstract text available Text: NTLUD3A50PZ Power MOSFET −20 V, −5.6 A, mCoolt Dual P−Channel, 2.0x2.0x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low RDS on Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving	Original	NTLUD3A50PZ NTLUD3A50PZ/D	PDF
NTTFS3A08PZTAG Abstract: No abstract text available Text: NTTFS3A08PZ Power MOSFET −20 V, −15 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114	Original	NTTFS3A08PZ JESD22-A114 NTTFS3A08P/D NTTFS3A08PZTAG	PDF
Untitled Abstract: No abstract text available Text: NTTFS3A08P Power MOSFET −20 V, −15 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114	Original	NTTFS3A08P JESD22-A114 NTTFS3A08P/D	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2010N MRF6V2010NB	PDF
transistor A114 Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2010N MRF6V2010NB transistor A114 a113 bolt AN1955 AN3263 A113 A114 A115 C101 JESD22	PDF
221D-03 Abstract: No abstract text available Text: NDF11N50Z, NDP11N50Z Product Preview N-Channel Power MOSFET 500 V, 0.52 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com	Original	NDF11N50Z, NDP11N50Z JESD22-A114) NDF11N50Z/D 221D-03	PDF
Untitled Abstract: No abstract text available Text: NTLJS3A18PZ Product Preview Power MOSFET −20 V, −8.4 A, mCoolt Single P−Channel, 2.0x2.0x0.8 mm WDFN Package http://onsemi.com Features • WDFN Package with Exposed Drain Pads for Excellent Thermal • • • • Conduction Low Profile WDFN 2.0x2.0x0.8 mm for Board Space Saving	Original	NTLJS3A18PZ NTLJS3A18PZ/D	PDF
Untitled Abstract: No abstract text available Text: PI3PD22924C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22924C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.	Original	PI3PD22924C PI3PD22924C	PDF
Untitled Abstract: No abstract text available Text: PI3PD22924C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22924C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.	Original	PI3PD22924C PI3PD22924C	PDF
MRF6V2300N Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2300N MRF6V2300NB MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22	PDF
hatching machine Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications	Original	MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22	PDF
Untitled Abstract: No abstract text available Text: NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A	Original	NDF06N62Z NDF06N62Z/D	PDF
Untitled Abstract: No abstract text available Text: PI3PD22925C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22925C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.	Original	PI3PD22925C PI3PD22925C	PDF

NDF10N62Z Abstract: No abstract text available Text: NDF10N62Z N-Channel Power MOSFET 620 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS	Original	NDF10N62Z NDF10N62Z/D NDF10N62Z	PDF
Untitled Abstract: No abstract text available Text: NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A	Original	NDF06N62Z 22-A114) NDF06N62Z/D	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications	Original	MRF6V2150N MRF6V2150NB	PDF
Untitled Abstract: No abstract text available Text: NDF04N60ZH Product Preview N-Channel Power MOSFET 600 V, 2.0 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 2 A	Original	NDF04N60ZH NDF04N60Z/D	PDF
MRF6V2300NB Abstract: transistor A113 MRF6V2300N Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 5, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are	Original	MRF6V2300N MRF6V2300NB transistor A113	PDF
NIPPON CAPACITORS Abstract: capacitor mttf 100B120JP 100B180JP Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP	PDF
NDF10N60ZG Abstract: 221D A114 JESD22 NDP10N60Z Text: NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com	Original	NDF10N60Z, NDP10N60Z NDF10N60Z/D NDF10N60ZG 221D A114 JESD22 NDP10N60Z	PDF
ndf05n50 Abstract: No abstract text available Text: NDF05N50ZH Product Preview N-Channel Power MOSFET 500 V, 1.5 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 2.2 A	Original	NDF05N50ZH NDF05N50ZH/D ndf05n50	PDF
Untitled Abstract: No abstract text available Text: NDF10N60ZH Product Preview N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com	Original	NDF10N60ZH NDF10N60ZH/D	PDF
221D Abstract: A114 mosfet 620 Text: NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted	Original	NDF06N62Z, NDP06N62Z NDF06N62Z 22-A114) NDF06N62Z/D 221D A114 mosfet 620	PDF

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A114 MOSFET Search Results

A114 MOSFET Result Highlights (5)

A114 MOSFET Datasheets Context Search

WDFN8

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NTTFS3A08PZTAG

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transistor A114

221D-03

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MRF6V2300N

hatching machine

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NDF10N62Z

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MRF6V2300NB

NIPPON CAPACITORS

NDF10N60ZG

ndf05n50

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221D