A123
Abstract: A132 Q67100-H5148 Tuner I2C program philips uv 9189X
Text: ICs for Consumer Electronics Quarter PIP Processor SDA 9189X A123 / A132 4PIP Data Sheet 03.96 Edition 03.96 This edition was realized using the software system FrameMaker. Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73,
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9189X
GPS05697
P-DSO-32-2
A123
A132
Q67100-H5148
Tuner I2C program philips uv
9189X
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AN200806
Abstract: CGR18650A CGR18650AF CGR18650 anr26650 CGR18650*af ultracapacitor A123 Systems 20Ah maxwell supercapacitor A123 ANR26650
Text: T: 450 585-6396 www.sysacom.com AN200806-01A Comparing energy density of some capacitors, ultracapacitors and batteries. By Denis Lachapelle eng. and Serge Garcia June 2008 Introduction This application note compares energy density of various energy storage components such as
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AN200806-01A
AN200806
CGR18650A
CGR18650AF
CGR18650
anr26650
CGR18650*af
ultracapacitor
A123 Systems 20Ah
maxwell supercapacitor
A123 ANR26650
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OPCA-02
Abstract: 9pin rs232 D-connector wiring diagram 03X-44A0-4 acs-cp-a ACS350-03X-44A0-4 ABB ACS350 ABB ACS 800 ACS350 NOCH-0030-6X OPMP-01
Text: Catalog ABB general machinery drives ACS350, 0.37 to 22 kW / 0.5 to 30 hp 14412 ACS350_EN_revG_68596106.indd 1 2.4.2009 15:03:20 Two ways to select your drive Choice 1: Simply contact your local ABB drives sales office see page 19 and let them know what
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ACS350,
ACS350
ACS350
Contro925
3AFE68596106
OPCA-02
9pin rs232 D-connector wiring diagram
03X-44A0-4
acs-cp-a
ACS350-03X-44A0-4
ABB ACS350
ABB ACS 800
NOCH-0030-6X
OPMP-01
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anr26650
Abstract: ANR26650M1 A123 APP4520 MAX1737 MAX4163 ic 4520 a123 systems
Text: Maxim > Design Support > App Notes > Amplifier and Comparator Circuits > APP 4520 Maxim > Design Support > App Notes > Battery Management > APP 4520 Keywords: lithium-battery chargers, charge-termination voltage, fast charge, dual op amp Jul 05, 2011 APPLICATION NOTE 4520
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MAX1737
MAX4163
com/an4520
AN4520,
APP4520,
Appnote4520,
anr26650
ANR26650M1
A123
APP4520
MAX1737
MAX4163
ic 4520
a123 systems
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Untitled
Abstract: No abstract text available
Text: Page 1 of 4 Zinc-Air Alkaline Batteries January 2014 PRODUCT SAFETY DATA SHEET PRODUCT NAME: Energizer Battery Type No.: AZ10/230, AZ13, AZ312, AZ675, TRADE NAMES: Energizer; Amplifier Approximate Weight: CHEMICAL SYSTEM: Zinc-Air Alkaline / Mercury Free Designed for Recharge: No
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AZ10/230,
AZ312,
AZ675,
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energizer recharge
Abstract: No abstract text available
Text: Page 1 of 4 Alkaline Batteries March 2015 PRODUCT SAFETY DATA SHEET PRODUCT NAME: Eveready / Energizer Battery Type No.: Volts: TRADE NAMES: ENERGIZER, ENERGIZER e², INDUSTRIAL ZMA, HERCULES, EVEREADY, WONDER Approximate Weight: CHEMICAL SYSTEM: Alkaline Manganese Dioxide-Zinc
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SICK distance sensor
Abstract: DT500-A111 can bus sick sensor laser distance measurement canbus SICK dt500 EN 60947-5-7 DT500-A223 DT500 A123
Text: DT500 Distance sensor Dimensional drawing 69 1 28 48 21 3 145 8 2 19 105 15 110 4 50 90 35 Ø9 on ESC 90 M12 5 ENTER High measurement accuracy thanks to time of flight measurement Simple alignment using red laser light Analogue current interface CAN Bus Metal housing with integral
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DT500
DT500-A2xx
DT500-A111
DT500-A211
DT500-A123
DT500-A223
SICK distance sensor
DT500-A111
can bus
sick sensor
laser distance measurement canbus
SICK dt500
EN 60947-5-7
DT500-A223
A123
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Sony 18650
Abstract: Sony 18650 battery SONY 18650 li-ion cell 18650 sony battery US18650 US18650G4 18650 charger tr 18650 battery anr26650 ANR26650M1
Text: Maxim > App Notes > BATTERY MANAGEMENT Keywords: Battery, Li+, Lithium, Charging, Safety, Constant Current, Constant Voltage, CCCV, Charging termination, Capacity fade, Protection schemes, MAX1508, MAX1873, MAX1737 Dec 17, 2007 APPLICATION NOTE 4169 Understanding Li+ Battery Operation Lessens Charging Safety Concerns
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MAX1508,
MAX1873,
MAX1737
com/an4169
MAX1508:
MAX1737:
MAX1873:
AN4169,
APP4169,
Appnote4169,
Sony 18650
Sony 18650 battery
SONY 18650 li-ion cell
18650 sony battery
US18650
US18650G4
18650 charger
tr 18650 battery
anr26650
ANR26650M1
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SSD-C01G
Abstract: SSD-C02G SSD-C04G 50 pin ide connector ssd-c01gui SIsweep silicondrive SSD-C08G C08G SiliconSystems
Text: DATA SHEET SILICONDRIVE II USB CF SSD-CXXXU I -4000 OVERVIEW SISECURE The SiliconDrive II USB CF is designed to meet the low power and small size requirements of embedded systems. SiZone SiliconDrive II technology is engineered exclusively for the high performance, high
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4000CU-09DSR
SSD-C01G
SSD-C02G
SSD-C04G
50 pin ide connector
ssd-c01gui
SIsweep
silicondrive
SSD-C08G
C08G
SiliconSystems
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GHW Connectors
Abstract: TDQ38 BTA60 bta61 bta80 bta11 BTA100 BTA32 bta50 bta81
Text: Version 1.2 December 1999 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 1999 Integrated Device Technology, Inc. Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance
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bta61
Abstract: bta60 TDQ38 GHW Connectors BTA100 LTA201 bta80 bta81 bta40 circuit bta42
Text: IDT79S145 Evaluation Board Manual Version 1.1 October 1999 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 492-8674 Printed in U.S.A. 1999 Integrated Device Technology, Inc. Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance
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IDT79S145
bta61
bta60
TDQ38
GHW Connectors
BTA100
LTA201
bta80
bta81
bta40 circuit
bta42
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Flnk911s
Abstract: I8086 FR80 LIB911 OPT911
Text: FUJITSU SEMICONDUCTOR CM71-00327-2E CONTROLLER MANUAL FR FAMILY TM SOFTUNE LINKAGE KIT MANUAL for V6 FR FAMILY TM SOFTUNE LINKAGE KIT MANUAL for V6 FUJITSU LIMITED PREFACE • Objectives and Intended Readership This manual describes the functions and operations of the Fujitsu SOFTUNE Linkage Kit
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CM71-00327-2E
Flnk911s
I8086
FR80
LIB911
OPT911
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A143 marking code
Abstract: a144 marking code cdqa2 transistor B123 EL B17 A106 A129 marking code A135 A101 A102 A104
Text: Advance Information RAMBUS Rambus® 64 Bit RIMM Module with 256/288Mb RDRAM Devices Overview Features The Rambus® 64 Bit RIMM™ module is a general purpose high-performance line of memory modules suitable for use in a broad range of applications
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256/288Mb
256Mb/288Mb
800MHz
DL0114
DL0115
A143 marking code
a144 marking code
cdqa2
transistor B123
EL B17 A106
A129 marking code
A135
A101
A102
A104
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i8080
Abstract: CPu intel i8086 I8086 LIB911 wildcard 88 FR20 FLNK911 MB91100 S3XXX CM71-00301-1E
Text: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM71-00301-1E FR 20 32-BIT MICROCONTROLLER MB91100 SERIES LINKAGE KIT MANUAL PREFACE • Objectives and Intended Readership This manual describes the functions and operation of the Linkage Kit for the Fujitsu FR20 32-bit
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CM71-00301-1E
32-BIT
MB91100
32-bit
F9611
i8080
CPu intel i8086
I8086
LIB911
wildcard 88
FR20
FLNK911
S3XXX
CM71-00301-1E
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Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
512MHz
DS120216
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Untitled
Abstract: No abstract text available
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
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RFHA1000
50MHz
1000MHz,
1000MHz
DS120418
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Gan hemt transistor RFMD
Abstract: DS111007 tl 4941
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS111007
Gan hemt transistor RFMD
DS111007
tl 4941
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Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
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RFHA1003S2
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS121114
RFHA1003S2
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PDF
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rfha1003
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
512MHz,
RFHA1003
30MHz
512MHz
DS120102
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RFHA1003SQ
Abstract: 30MHz to 512MHz
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
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RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
RFHA1003SQ
30MHz to 512MHz
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Gan hemt transistor RFMD
Abstract: RFHA1000
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15 W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
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RFHA1000
50MHz
1000MHz,
RFHA1000
1000MHz
DS110922
Gan hemt transistor RFMD
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PDF
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RFHA1000
Abstract: RFHA-1000 GRM21BF51C106ZE15 455J 238j
Text: RFHA1000 RFHA1000 50 MHz to 1000 MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
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RFHA1000
RFHA1000
50MHz
1000MHz,
1000MHz
DS120102
RFHA-1000
GRM21BF51C106ZE15
455J
238j
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551001
Abstract: No abstract text available
Text: TOSHIBA TC551001API/AFVAFTVA1KI-85L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description T h e T C 5 5 1 0 0 1 A P I is a 1 ,0 48,5 76 bit C M O S sta tic ra ndom acce ss m e m ory organized as 131,072 w o rd s b y 8 bits and operated from a single 5V p o w e r supply. A dvan ced circuit tech nique s provide both high speed and low p o w e r features w ith an operating cur
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OCR Scan
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TC551001API/AFVAFTVA1KI-85L/10L
002b2b^
551001
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