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    A12A 24 Search Results

    A12A 24 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10127905-A12A20DLF Amphenol Communications Solutions HPCE VT Receptacle with enhanced walls 28P20S Visit Amphenol Communications Solutions
    10127905-A12A30DLF Amphenol Communications Solutions HPCE VT Receptacle with enhanced walls 28P30S Visit Amphenol Communications Solutions
    10127905-A12A20ALF Amphenol Communications Solutions HPCE VT Receptacle with enhanced walls 28P20S Visit Amphenol Communications Solutions
    10139140A12A20DHLF Amphenol Communications Solutions HPCE VT Receptacle 28P20S Visit Amphenol Communications Solutions
    10127905-A12A20CLF Amphenol Communications Solutions HPCE VT Receptacle with enhanced walls 28P20S Visit Amphenol Communications Solutions
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    A12A 24 Price and Stock

    Inventus Power MWA150024A-12A

    Desktop AC Adapters 24V 6.3A 150W 7.56 x 2.45 x 1.52
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    Mouser Electronics MWA150024A-12A 130
    • 1 $71.32
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    • 100 $64.93
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    Inventus Power MWA220024A-12A

    Desktop AC Adapters 220W 24V 9.2A - MED CLASS I
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    Mouser Electronics MWA220024A-12A 75
    • 1 $100.99
    • 10 $95.28
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    ADLINK Technology Inc XEON E5-2658 v2 2.40GHz FC-LGA12A

    CPU - Central Processing Units CPU, Xeon E5-2658 v2, 2.40GHz, 10-Core, 25MB SmartCache, Ivy Bridge EP, CM8063501293200 SR1A0, Step:M1, MM# 929993
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    Mouser Electronics XEON E5-2658 v2 2.40GHz FC-LGA12A
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    OTTO Engineering Inc HTWF-1A12A24A

    Industrial Hall Effect / Magnetic Sensors Thumbwheel +/- 30o 0.5-4.5VDC Pddl
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    Mouser Electronics HTWF-1A12A24A
    • 1 $119.95
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    Sager HTWF-1A12A24A 3
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    PanJit Semiconductor P4SMA12AS_R1_00001

    ESD Protection Diodes / TVS Diodes 400W,Transient Voltage Suppressors,SMA,10.2V,UNI
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    Mouser Electronics P4SMA12AS_R1_00001
    • 1 $0.3
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    A12A 24 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: XS1-A12A-128-FB217 Datasheet 2013/12/09 XMOS 2013, All Rights Reserved Document Number: X9253, XS1-A12A-128-FB217 Datasheet 1 Table of Contents 1 xCORE Multicore Microcontrollers . . 2 XS1-A12A-128-FB217 Features . . . 3 Pin Configuration . . . . . . . . . . .


    Original     		PDF XS1-A12A-128-FB217 X9253,

    A17a

    Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
    Text: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time


    Original     		PDF 2002/95/EC A17a diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking

    a13b 5 pin

    Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
    Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next


    Original     		PDF IDTAMB0480 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH a13b 5 pin A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin

    Untitled

    Abstract: No abstract text available
    Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES DESCRIPTION: FEATURES: Advanced Memory Buffer for Fully buffered DIMMs 3.2 and 4 Gbit/s serial speeds DDR2-533 and 667 DRAM


    Original     		PDF IDTAMB0480 DDR2-533 AMB0480xxRJ8 AMB0480xxRJ AMB0480xxRH8 AMB0480xxRH

    A13B

    Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
    Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits


    Original     		PDF AS9C25512M2018L 19-bit A13B DQ17A-DQ0A A14B DQ4a DQ11A

    203d6

    Abstract: No abstract text available
    Text: Bowmar/lHfhite 128K x 8 BIT SRAM C8-M128 SERIES Technology PIN DIAGRAM NC □ 1 A16 C 2 A14 □ A12 □ A7 32 3 V c c 31 □ A 15 3 30 3 N C 4 24 □ W E c 5 6 28 3 A 13 27 □ A 8 A6 c A5 c A4 A3 c 8 c 9 c 10 A1 □ 11 AD □ 12 21 DO □ 13 20 3 D6 D1 □


    OCR Scan     		PDF C8-M128 120nS 15A14 12A10-- 203d6

    Untitled

    Abstract: No abstract text available
    Text: 3ÔE D MICRON TECHNOLOGY INC blllSM'l QGQ3G2Q 1 • MRN r - % - n - ìz aìa r CACHE DATA STATIC RAM DUAL 4Kx 18 SRAM, SINGLE 8Kx 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIG N M EN T Top View • Automatic WRITE cycle completion • Operates as two 4K x 18 SRAMs with common


    OCR Scan     		PDF 33MHz 25MHz

    A91A

    Abstract: A18A a39a mur 4520 A30A A11A a68a a75a btp 506 A36A
    Text: TPSMA6.8 THRU TPSMA43A AUTOMOTIVE SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6 . 8 - 4 3 . 0 Volts 400 Watt Peak Pulse Power_ _FEATURES D O -2 1 4 A C — ' t I .0 7 8 1 .3 8 . 0 9 0 ( 2 .2 9 ) V L -_ _ J


    OCR Scan     		PDF TPSMA43A A91A A18A a39a mur 4520 A30A A11A a68a a75a btp 506 A36A

    DUP1

    Abstract: No abstract text available
    Text: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i


    OCR Scan     		PDF DD037M3 8Kx18 66MHz b00D37S2 DUP1

    mt90c

    Abstract: MT56C0816EJ-25 mt56c0816
    Text: MICRON TECHNOLOGY INC SSE T> WÊ blllSHT 0 0 0 3 ^ 3 7HT B U R N MT56C0816 8K x 16, DUAL 4K x 16 CACHE DATA SRAM V H C Z R O N CACHE DATA SRAM SINGLE 8Kx 16 SRAM, DUAL4KX16 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 16 SRAMs with common


    OCR Scan     		PDF MT56C0816 DUAL4KX16 52-Pin MT56CO016 mt90c MT56C0816EJ-25

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N * MT56C2818 8 K x 18, DUAL 4 K x 18 CACHE DATA SRAM CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES PIN ASSIGNMENT Top View • A u tom atic W RITE cycle com pletion • O p erates a s tw o 4K x 18 SR A M s w ith com m on


    OCR Scan     		PDF MT56C2818 8Kx18 4KX18SRAM

    MARKING CODE LT DO-214AC

    Abstract: marking 15C SMA TVS IEC801-2 IEC801-4 P4SMA10CA P4SMA220CA p4sma75a
    Text: P4SMA6.8A thru P4SMA220CA 5YMSEMI semicomductor Surface Mount Transient Voltage Suppressors Peak Pulse Power 400W Breakdown Voltage 6.8 to 220V Features_ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ P la s tic pa cka g e has U n d e rw rite rs L a b o ra to ry F lam m a bility


    OCR Scan     		PDF P4SMA220CA IEC801-2) IEC801-4) 10/1000us 10psec. 50mVpp MARKING CODE LT DO-214AC marking 15C SMA TVS IEC801-2 IEC801-4 P4SMA10CA P4SMA220CA p4sma75a

    ATT7C314J

    Abstract: No abstract text available
    Text: iATsT Data Sheet November 1991 rMicroelectronics A TT7C 314J S ta tic , D u al-P o rt RAM 72K 8192 w ords x 9 b its Benefits Features • Full internal contention resolution transparent to the user ■ Word-size expansion capability ■ Parity bit available with 9-bit organization


    OCR Scan     		PDF ATT7C31ample, ATT7C314J 68-Pin

    Untitled

    Abstract: No abstract text available
    Text: QS88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 FEATURES/BENEFITS • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/Word read/write 20ns/25 ns/30ns/35 ns Taa Available in 52-pin PLCC


    OCR Scan     		PDF QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 52-pin 16-bit

    Untitled

    Abstract: No abstract text available
    Text: COMPONENT RESEARCH CO I bSE D • 5303^11 00DQ70? OTT ^ 1 2 Component Research METALLIZED POLYCARBONATE CAPACITOR J- f l- t S PRODUCT FEATURES { 7 i" y 1.0 /nF 30VDC ACTUAL SIZE CAPACITOR QUALIFIED TO MIL-C-83421/01 FAILURE RATE S. HERMETICALLY SEALED, HIGH RELIABILITY SCREENED FOR CRITICAL AEROSPACE APPLICATIONS.


    OCR Scan     		PDF 00DQ70? 30VDC MIL-C-83421/01 22VRMS 240VRMS 400Hz. 40KHz 30VDC 400VDC.

    5DOF

    Abstract: A12U HY628400 HAB 20-S
    Text: HY628400 Series » H Y U N D A I 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400 512Kx 288x8-bits speed-55/70/85/100ns 00b353 1DE01 -11-MAY95 5DOF A12U HAB 20-S

    Untitled

    Abstract: No abstract text available
    Text: QS88180, ô QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 QS88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial


    OCR Scan     		PDF QS88180, QS88160 4Kx16/18 QS88180 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883,

    R343C

    Abstract: MIL-STD-883 Method 1019 UT28F256
    Text: Military Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Preliminary Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER May 1994 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmers


    OCR Scan     		PDF UT28F256 140mA MIL-STD-883, MIL-I-38535 R343C MIL-STD-883 Method 1019

    AEB DP1

    Abstract: 0588 82385 A12A D815
    Text: Q S88180, Q QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses QS88180 Q S 88160 Prelim inary FE A T U R E S /B E N E FIT S • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables for byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial


    OCR Scan     		PDF QS88180, QS88160 4Kx16/18 QS88180 QS88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, AEB DP1 0588 82385 A12A D815

    Untitled

    Abstract: No abstract text available
    Text: 4<ÌE D P r e v ie w • SöböMSb DDGlObl 5 h 5 ■ MMHS I H I I f T M S e p te m b e r 1 9 9 0 NATRA M H S HM 65688 DATASHEET 16kx4 ULTIMATE CMOS SRAM FEATURES ACCESS TIME MILITARY/INDUSTRIAL : 45/55 ns max COMMERCIAL : 35/45 ns (max) VERY LOW POWER CONSUMPTION


    OCR Scan     		PDF 16kx4

    Untitled

    Abstract: No abstract text available
    Text: bEM'ìflSS 00SH2S3 MITSUBISHI LSIs 3D7 • M I T I M5M51008AP,FP,VP,RV-55L,-55LL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 5 1 0 0 8 A P , FP, VP, RV are a 1 0 4 8 5 7 6 -b it CMOS PIN CONFIGURATION (TOP VIEW) static R A M organized as .131072 w ord by 8 - bit w hich are


    OCR Scan     		PDF 00SH2S3 M5M51008AP RV-55L -55LL 1048576-BIT 131072-WORD

    A17a

    Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
    Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400 512KX 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 A17a HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A tsop 338 IR 1A13 DA16

    A011 transistor

    Abstract: No abstract text available
    Text: QS88180, QS88160 High-Speed CMOS Dual 4Kx16/18 SRAM with Latched Addresses Q 7 QS88180 Q S88160 Preliminary FEATURES/BENEFITS • • • • • Dual 4Kx18/16 allows 2-way set associative cache Byte enables 1or byte/word read/write 20ns/25 ns/30ns/35 ns Taa commercial


    OCR Scan     		PDF QS88180, QS88160 4Kx16/18 QS88180 S88160 4Kx18/16 20ns/25 ns/30ns/35 ns/30ns/35/45 MIL-STD-883, A011 transistor

    F0016

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 6 2 8 1 0 0 A S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A HY628100AP HY628100ALP HY628100ALLP HY628100AG HY628100ALG HY628100ALLG HY628100AT1 F0016