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    A13 MARKING TRANSISTOR Search Results

    A13 MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A13 MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A13 MARKING CODE

    Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
    Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability


    Original     		PDF TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP O-251 75pcs A13 MARKING CODE transistor a13 MARKING a13 A13 transistor a13 marking transistor diode MARKING CODE a13

    power transistor Ic 4A NPN to - 251

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
    Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability


    Original     		PDF TSC5804D O-251 O-252 TSC5804DCH TSC5804DCP O-251 75pcs power transistor Ic 4A NPN to - 251 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13

    Untitled

    Abstract: No abstract text available
    Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer


    Original     		PDF TS13005CK O-126 TS13005CK 50pcs

    Transistor A14

    Abstract: MMBTA14LT1 MMBTA13LT1
    Text: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces


    Original     		PDF MMBTA13/14LT1 100uA 100mA 100MHz 40x40x1 300us MMBTA13LT1 MMBTA14LT1 Transistor A14

    Transistor A14

    Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
    Text: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage


    Original     		PDF MMBTA13LT1/14LT1 100mA 100MHz 40x40x1 300us MMBTA13LT1 MMBTA14LT1 Transistor A14 a14 Transistor a13 marking transistor

    Transistor MPSA13

    Abstract: mpsa14
    Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,


    Original     		PDF MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz 300ms, DS11111 Transistor MPSA13 mpsa14

    mpsa14

    Abstract: No abstract text available
    Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic


    Original     		PDF MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz DS11111 mpsa14

    A14 marking SOT

    Abstract: to-92 case connections MPSA DARLINGTON MPSA13 a13 marking sot23 sot-23 body marking A 4 MARKING R1n 432 sot23 A14 SOT23-5 MMBTA13
    Text: MPSA13/14 / MMBTA13/14 NPN DARLINGTON TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA13 / MMBTA14 High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages A C TOP VIEW B C B E G E D H K Mechanical Data


    Original     		PDF MPSA13/14 MMBTA13/14 MMBTA13 MMBTA14 OT-23 MPSA13 MPSA14 O-92/SOT-23, MIL-STD-202, OT-23 A14 marking SOT to-92 case connections MPSA DARLINGTON a13 marking sot23 sot-23 body marking A 4 MARKING R1n 432 sot23 A14 SOT23-5

    SOT23 DIODE marking CODE AV

    Abstract: a15 diode 357 SOT23 marking A11 SOT-23 MARKING AV sot-23 marking a13 marking AV package sot23 diode a13 A14 marking SOT sot23 package marking AV
    Text: MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode SOT-23 Features — Two element incorporated into one package. Emitter-coupled transistors — Reduction of the mounting area and assembly cost by one half. Applications — Dimensions in inches and (millimeters)


    Original     		PDF MMBD1501A/1503A/1504A/1505A OT-23 MMBD1501A MMBD1503A MMBD1504A MMBD1505A MMBD1501A MMBD1503A MMBD1504A MMBD1505A SOT23 DIODE marking CODE AV a15 diode 357 SOT23 marking A11 SOT-23 MARKING AV sot-23 marking a13 marking AV package sot23 diode a13 A14 marking SOT sot23 package marking AV

    MPS A13 transistor

    Abstract: MPSA13 mps a13
    Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.


    Original     		PDF MPSA13 MMBTA13 PZTA13 MPSA13 MMBTA13 OT-23 OT-223 MPSA14 MPS A13 transistor mps a13

    a15 diode

    Abstract: diode MARKING CODE a13 MMBD1503A sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13
    Text: High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Two element incorporated into one package. Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and assembly cost by one half. z RoHS product for packing code suffix "G",


    Original     		PDF MMBD1501A/1503A/ 504A/1505A MMBD1501A MMBD1503A MMBD1504A MMBD1505A OT-23 MMBD1501A MMBD1503A MMBD1504A a15 diode diode MARKING CODE a13 sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13

    marking 08 sot-23

    Abstract: BL SOT23 a15 diode a13 marking sot23 1504A SOT A14 marking SOT23 V 4 diode A14 marking SOT SOT23 A13 MMBD1503A
    Text: BL Galaxy Electrical Production specification High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Pb Two element incorporated into one package. Lead-free Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and


    Original     		PDF MMBD1501A/1503A/ 504A/1505A MMBD1501A MMBD1503A MMBD1504A MMBD1505A OT-23 marking 08 sot-23 BL SOT23 a15 diode a13 marking sot23 1504A SOT A14 marking SOT23 V 4 diode A14 marking SOT SOT23 A13 MMBD1503A

    c215a

    Abstract: 1902 transistor BTNA13A3 BTNA14A3
    Text: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit


    Original     		PDF C215A3 BTNA13A3 BTNA14A3 BTPA63A3. UL94V-0 BTNA14A3 c215a 1902 transistor BTNA13A3

    sot-23-5 a13

    Abstract: TRANSISTOR Marking XB SOT-89 a13 marking sot235 marking A13, SOT-23-5 a13 marking sot-23-5
    Text: RT9261/A Preliminary VFM Step-Up DC/DC Converter General Description Features The RT9261 Series are VFM Step-up DC/DC ICs with ultra low supply current by CMOS process and suitable for use with battery-powered instruments. z The RT9261 IC consists of an oscillator, a VFM control


    Original     		PDF RT9261/A RT9261 RT9261A OT-89 DS9261/A-13 sot-23-5 a13 TRANSISTOR Marking XB SOT-89 a13 marking sot235 marking A13, SOT-23-5 a13 marking sot-23-5

    HM6216255CTTI12

    Abstract: HM6216255HCJPI-12 HM6216255HCTTI-12 HM6216255CJPI12 DSA003633
    Text: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed


    Original     		PDF HM6216255HCI 256-kword 16-bit) ADE-203-1305A 256-k 16-bit. 400-mil 44-pin HM6216255CTTI12 HM6216255HCJPI-12 HM6216255HCTTI-12 HM6216255CJPI12 DSA003633

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan     		PDF FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n

    transistor a13

    Abstract: MARKING WL MPSA13 MPSA14
    Text: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,


    OCR Scan     		PDF MPSA13 MPSA14 MIL-STD-202, MPSA14 100mA, 100mA 100MHz transistor a13 MARKING WL

    MPSA14

    Abstract: MPSA13 impsa13
    Text: 3IÌB5 MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages « -E -* TO-92 Mechanical Data_ • • •


    OCR Scan     		PDF MPSA13 MPSA14 MIL-STD-202, MPSA14 100mA, 100mA 100MHz 300ns, impsa13

    Untitled

    Abstract: No abstract text available
    Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,


    OCR Scan     		PDF MPSA13 MPSA14 IL-STD-202, 100mA, 100mA 100MHz 300ns, DS11111

    MPSA14

    Abstract: MPSA13
    Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram


    OCR Scan     		PDF MPSA13 MPSA14 MIL-STD-202, MPSA14 100nA, 100mA, 100MHz

    41 BF transistor

    Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
    Text: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage


    OCR Scan     		PDF r-33-Ã BF869SABF871 T0126 15A3DIN 41 BF transistor transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44

    T3D 90

    Abstract: marking abF t3d 2d Marking 3D TO-236AB TMPT4402 TMPTA70 TMPTA63 0/t3d 2d
    Text: SPRAGUE/SEMICOND 8514 0 19 SPRAGUE. 13 GR OU P 6513650 S E M I C O N D S /ICS 0003L06 1 93D 03608 i> T '9.7-10 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO 25 25 60 90 40 40 30 25 40 40 50


    OCR Scan     		PDF 0003L06 T3D 90 marking abF t3d 2d Marking 3D TO-236AB TMPT4402 TMPTA70 TMPTA63 0/t3d 2d

    transistor Bc 542

    Abstract: transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A
    Text: 17E 1> • ô'iëO O 'lL 000*155? TELEFUNKEN ELE CTRONIC BUT 56 • BUT 56 A TTilUlFiyjlìSKiìii electronic Cr*ttve Tèehoo*og*s T*-33-f3 Silicon NPN Power Transistors Applications: Switching mode power supply Features: • In multi diffusion technique • Short switching times


    OCR Scan     		PDF 33-r2 a75ttti DIN41 T0126 15A3DIN transistor Bc 542 transistor BC 56 transistor bc 144 bc 147 transistor BUT 11 Transistor transistor BC 147 transistor bc 146 c 2665 transistor BUT56 FC4A

    T3D 1N

    Abstract: marking 1FF tmpt3904 TMPT2222 SPRAGUE
    Text: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. T3 D • S E M I C O N D S / ICS flS13flS0 0003^0^ S ■ 9 3 D 0 3 6 0 6 J , SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS a tT A = 25°C DC Current Gain IcBO TMPT5550 TMPT5551 TMPT6427


    OCR Scan     		PDF flS13flS0 TMPT2221A TMPT2222 TMPT2222A TMPT2484 TMPT3903 TMPT3904 TMPT4124 TMPT4401 TMPT5088 T3D 1N marking 1FF TMPT2222 SPRAGUE