A1315 TRANSISTOR Search Results

A1315 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

A1315 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C67078-A1315-A2 Abstract: No abstract text available Text: SIEMENS SI PM OS Power MOS Transistors ’ D SC on • • • • BUZ 76 BUZ 76 A = 400 V = 3 .0 / 2.7 A = 1 .8 /2 .5 Q N channel Enhancement mode Avalanche-proof Package: TO-220 A B 1) Type Ordering code BUZ 76 C67078-A1315-A2 BUZ 76 A C67078-A1315-A3 Maximum Ratings	OCR Scan	O-220 C67078-A1315-A2 C67078-A1315-A3	PDF
Transistor A1315 Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328 Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	2SA1315 2SC3328 Transistor A1315 A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328	PDF
Transistor A1315 Abstract: 2sa1315 Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	2SA1315 2SC3328 O-92MOD Transistor A1315 2sa1315	PDF
Transistor A1315 Abstract: A1315 transistor 2Sa1315 A1315 2SC3328 Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)	Original	2SA1315 2SC3328 Transistor A1315 A1315 transistor 2Sa1315 A1315 2SC3328	PDF
Transistor A1315 Abstract: 2SA1315 A1315 transistor 2SC3328 A1315 Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)	Original	2SA1315 2SC3328 Transistor A1315 2SA1315 A1315 transistor 2SC3328 A1315	PDF
CDP6805E2 Abstract: CDP6805E3E CDP6805E3CE Text: S E M I C O N D U C T O R CDP6805E2, CDP6805E2C CDP6805E3, CDP6805E3C CMOS 8-Bit Microprocessor March 1998 Hardware Features Description • Full Speed Operating Power @ 5V . . . . . . . 35mW Typ The CDP6805E2 and CDP6805E3 Microprocessors Unit (MPUs) belong to the CDP6805 Family of CMOS	Original	CDP6805E2, CDP6805E2C CDP6805E3, CDP6805E3C CDP6805E2 CDP6805E3 CDP6805 1-800-4-HARRIS CDP6805E3E CDP6805E3CE	PDF
CDP6805E3E Abstract: CDP6805E2 CDP6805E2C CDP6805E2CE CDP6805E2E CDP6805E3 CDP6805E3C CDP6805E3CE Text: CDP6805E2, CDP6805E2C, CDP6805E3, CDP6805E3C CMOS 8-Bit Microprocessor March 1998 Hardware Features Description • Full Speed Operating Power @ 5V . . . . . . . 35mW Typ The CDP6805E2 and CDP6805E3 Microprocessors Unit (MPUs) belong to the CDP6805 Family of CMOS	Original	CDP6805E2, CDP6805E2C, CDP6805E3, CDP6805E3C CDP6805E2 CDP6805E3 CDP6805 CDP6805E3E CDP6805E2C CDP6805E2CE CDP6805E2E CDP6805E3C CDP6805E3CE	PDF