2SA1386
Abstract: 2SA1386A
Text: AOK AOK Semiconductor Product Specification 2SA1386 2SA1386A Silicon PNP P o w er Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3519/3519A APPLICATIONS • Audio and general purpose PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to
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2SA1386
2SA1386A
2SC3519/3519A
2SA1386A
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DQ25A
Abstract: DQ20A DQ18A
Text: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green
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SG578288FG8SZUU
SG578288FG8SZDG
128Mx78
244-pin
128Mx39
512MB
64Mx8
DDR2-533-444,
PC2-4200
SG578288FG8SZIL
DQ25A
DQ20A
DQ18A
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a13b 5 pin
Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next
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IDTAMB0480
AMB0480xxRJ8
AMB0480xxRJ
AMB0480xxRH8
AMB0480xxRH
a13b 5 pin
A13B
AMB0480
diode A14A
IDTAMB0480
DDR2-533
DDR2-667
ADVANCED COMMUNICATION DEVICES
A12A
a12b 5 pin
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Untitled
Abstract: No abstract text available
Text: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES DESCRIPTION: FEATURES: Advanced Memory Buffer for Fully buffered DIMMs 3.2 and 4 Gbit/s serial speeds DDR2-533 and 667 DRAM
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IDTAMB0480
DDR2-533
AMB0480xxRJ8
AMB0480xxRJ
AMB0480xxRH8
AMB0480xxRH
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Untitled
Abstract: No abstract text available
Text: ^77. DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D. MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : • Sensitive logic input protection ■ Microprocessor based equipment ■ Audio / Video inputs
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DALC208SC6
DALC208SC6
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Untitled
Abstract: No abstract text available
Text: CYM1461 r^ Y D P F Q C SEMICONDUCTOR 512Kx 8 Static RAM Module Features Functional Description • High-density 4-m egabit SRAM module T h eC Y M 1461isahigh-perform ance 4-m eg ab itstaticR A M m o d u leorganizedas 512K w ords by 8 bits. This m odule is con
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CYM1461
512Kx
1461isahigh-perform
1461PS-70C
1461PF-70C
CYM1461LPS-70C
1461LPF-70C
1461PS-85C
CYM1461LPS-85C
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A13B
Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits
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AS9C25512M2018L
19-bit
A13B
DQ17A-DQ0A
A14B
DQ4a
DQ11A
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transistor std A13B
Abstract: A13B fast diode ifm if 40 A transil IEC1000-4-2 S020 SO20 SSOP20 SSOP20 300 mil
Text: ESDR6V1-27FUx Application Specific Discretes A.S.D.TM ESD PROTECTION MONOLITHIC 9-BIT WIDE TRANSILTM ARRAY MAIN APPLICATIONS Where high level protection in ESD sensitive equipment is required, such as : - Computers - Printers - Business machines - Communication systems
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ESDR6V1-27FUx
ESDR6V1-27FUx
ThelayoutoftheESDR6V1-27FUxdeviceallows
transistor std A13B
A13B
fast diode ifm if 40 A transil
IEC1000-4-2
S020
SO20
SSOP20
SSOP20 300 mil
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SSOP20 300 mil Footprint
Abstract: 74HC04 IEC1000-4-2 SSOP20
Text: EMIF09-02726Sx Application Specific Discretes A.S.D.TM EMI FILTER INCLUDING ESD PROTECTION MAIN APPLICATIONS Where EMI filtering in ESD sensitive equipment is required : Computers and printers Communication systems Mobile phones MCU Boards SO-20 DESCRIPTION
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EMIF09-02726Sx
SO-20
EMIF09-02726sx
SSOP20
SSOP20 300 mil Footprint
74HC04
IEC1000-4-2
SSOP20
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DQ20A
Abstract: A17a DQ18A be2a A13B
Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits
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AS9C25256M2036L
18Gbps
18-bit
DQ20A
A17a
DQ18A
be2a
A13B
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A13B
Abstract: MARKING CODE DALC BV99 a13 marking sot23 74HC04 DALC208SC6 SC74 0118E a13b 5 pin PIN diode Pspice model
Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : n Sensitive logic input protection n Microprocessor based equipment n Audio / Video inputs
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DALC208SC6
OT23-6L
DALC208SC6
DALC208SChts
A13B
MARKING CODE DALC
BV99
a13 marking sot23
74HC04
SC74
0118E
a13b 5 pin
PIN diode Pspice model
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A13B
Abstract: FigA12 a13b 5 pin sot23/smd DALC a13 marking sot23 marking dalc 74HC04 DALC208SC6 SC74 DALC SOT23-6
Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs Portable electronics
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DALC208SC6
OT23-6L
DALC208SC6
A13B
FigA12
a13b 5 pin
sot23/smd DALC
a13 marking sot23
marking dalc
74HC04
SC74
DALC SOT23-6
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A13B
Abstract: DALC208SC6 DALC206SC6 a13b 5 pin a13 marking sot23 marking dalc IEC1000-4-2 SC74 74HC04 diode MARKING CODE A9
Text: DALC208SC6 LOW CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD and/or over and undershoot protection for datalines is required : Sensitive logic input protection Microprocessor based equipment Audio / Video inputs
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DALC208SC6
OT23-6L
DALC208SC6
A13B
DALC206SC6
a13b 5 pin
a13 marking sot23
marking dalc
IEC1000-4-2
SC74
74HC04
diode MARKING CODE A9
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A17a
Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Text: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]
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AS9C25512M2018L
AS9C25256M2018L
512/256K
A17a
a17b
A18B-A0B
diode A14A
A14A
A15A
A16A
AS9C25256M2018L
AS9C25512M2018L
DQ17A
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A12B
Abstract: A14B a17b DS1280 A10B A11B A13B DS1280FP-80
Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for
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DS1280
68-pin
80-pin
DS1280FP-XX
44-pin
A12B
A14B
a17b
DS1280
A10B
A11B
A13B
DS1280FP-80
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dallas ds1280
Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
Text: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for
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DS1280
68-pin
80-pin
DS1280FP-XX
44-pin
dallas ds1280
A12B
A18B
a17b
DS1280
A10B
A11B
A13B
DS1280FP-80
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DS1280s
Abstract: dallas ds1280
Text: DS1280 DS1280 DALLAS SEMICONDUCTOR 3-Wire to Bytewide Converter Chip FEATURES PIN CONNECTIONS • Adapts JEDEC bytewide memory to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for dual port operation
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DS1280
68-pin
80-pin
A11BC
A12BC
A13RC
A14RC
A14BC
A15BC
DS1280s
dallas ds1280
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9114 static ram
Abstract: dallas ds1280 a17b 68-PIN DS1280 DS1280Q-68 TD1220
Text: » A L L A S SEMICONDUCTOR CORP 31E D B HblMlBO 0003*133 0 ES DAL O S 1280 • W toàia^ M M éa^ M ni iii ii ì r -iiiJL.V^-r ¿ « .,- Mt. -«h. . '.riti , , tM . \* ^ * 5 0~7 E i£ a « a 081280 DALLAS 3-Wire to Bytewide Converter Chip semiconductor
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DS1280
68-pin
80-pln
DS1280Q-XX
DS1280FP-XX
2bl4130
DS1280Q-68
9114 static ram
dallas ds1280
a17b
DS1280
TD1220
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SN10
Abstract: SN13 a12b
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 2Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
HMP41GF7MMP4C
D0/D18
D1/D19
D2/D20
D3/D21
D4/D22
D5/D23
D6/D24
D7/D25
SN10
SN13
a12b
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HMP31GF7AFR4C
Abstract: SN10 SN13 1x2 demux
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 2Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
1Gbx72,
HMP31GF7AFR4C
HMP31GF7AFR4C
SN10
SN13
1x2 demux
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SN10
Abstract: SN13 "Raw Card J" DDR DIMM 512m non-ecc SPD
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb 1st ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that isolates the DDR2
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240pin
1240pin
SN10
SN13
"Raw Card J"
DDR DIMM 512m non-ecc SPD
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HYMP351F72AMP4D2-C4
Abstract: A13A dram card 60 SN10 SN13 hymp351f72amp4d2 DDR DIMM 512m non-ecc SPD DDR2 DIMM
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HYMP351F72AMP4
HYMP351F72AMP4D2-C4
A13A
dram card 60
SN10
SN13
hymp351f72amp4d2
DDR DIMM 512m non-ecc SPD
DDR2 DIMM
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NEC A15A
Abstract: dram card 60 SN13
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HYMP351F72AMP4
NEC A15A
dram card 60
SN13
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Untitled
Abstract: No abstract text available
Text: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that
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240pin
1240pin
512Mx72,
HMP151F7EFR4C
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