A14 TRANSISTOR Search Results

A14 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

A14 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mpsa14 Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66 Text: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)	OCR Scan	MPS-A131 MPS-A14 MPS-A65, MPS-A66 T0-92A MPS-A65 mps-a14 kps-a66 1500c 100mA mpsa14 MPS-A13 pnp MPSA65 Xl03 mpsa66 MPS-A13 MPS-A66	PDF
MPS-A13 Abstract: MPS-A14 Text: 111 E SOLID STATE 3875081 G E SOLID STATE DE~\| 3ñ?5Qñl □ □IT'ifi? 1 01E 17987 D Signal Transistors MPS-A13, MPS-A14 T '¿< 7 « 2 7 Silicon Darlington Transistors TO-92 The GE/RCA M P S-A 13 and A14 are planar epitaxial passiva ted N PN silicon Darlington transistors designed for preampli	OCR Scan	017ciÃ MPS-A13, MPS-A14 CAMPS-A13andA14areplanarepitaxialpassiva- MPS-A13 100kHz) 100kQ MPS-A14	PDF
MPSA13 Abstract: No abstract text available Text: MPS MPS MPS MPS THE MPS-A15» MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T O -9 2 A EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d .vice i, v o lu a * and currant v a lu « a n n e ^ a llx .	OCR Scan	MPS-A15Â MPS-A14 MPS-A66 MPS-A13 MPS-A14 mps-a65 mps-a66 1500c 100kHz MPS-A13, MPSA13	PDF
MPSA13M Abstract: MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13 Text: MPS-A13 SILICON MPS-A14 NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON AMPLIFIER TRANSISTORS . . . designed for pre-amplifier input applications requiring high input impedance. • High D C Current Gain @ lc - 10 m A d c hFE = 5,000 (Min) M P S-A 1 3	OCR Scan	MPS-A13 MPS-A14 100/uAdc MPSA13M MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13	PDF
EM51L256A-15J Abstract: Etron Technology Text: EtronTech Em51L256A 3.3V 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5	Original	Em51L256A 28-Pin 300-mil 10ns/12ns/15ns EM51L256A-15J Etron Technology	PDF
EM51M256A-15P Abstract: Em51M256A-15 Etron Etron Technology ISB12 Em51m256 Text: EtronTech Em51M256A 3.3V I/O 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Advanced CMOS Process	Original	Em51M256A 28-Pin 300-mil 10ns/12ns/15ns 004MAX 10MAX EM51M256A-15P Em51M256A-15 Etron Etron Technology ISB12 Em51m256	PDF
EM51256C-15P Abstract: em51256 Etron Technology EM51256C-10J Text: EtronTech Em51256C 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5 5 24	Original	Em51256C 28-Pin 300-mil 10ns/12ns/15ns EM51256C-15P em51256 Etron Technology EM51256C-10J	PDF
MPS-A15 Abstract: ic 4565 mpsa15 MPSA13 MPSA66 MPS-A13 MPS-A14 MPS-A65 MPS-A66 MPS-A13 pnp Text: • w ■■ ni MPS - A65 MPS - A66 THE MPS-A1 5 , MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) A R E SILICON PLANAR EPITAXIAL CASE T O -9 2 A DARLINGTON TRANSISTORS FOR A F AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d . v i c e i , v o ltag » a n d c u r ra n t v a l u « a n n t o a ' l x .	OCR Scan	MPS-A15, MPS-A14 MPS-A65, MPS-A66 T0-92A MPS-A13 MPS-A65 MPS-A14 MPS-A66 1500c MPS-A15 ic 4565 mpsa15 MPSA13 MPSA66 MPS-A13 pnp	PDF
2sk303 Abstract: 2SK2219 2SK283 sk184 2SK2171 SK174 2SK436 2SK848 P/N146071 2sd22 Text: SA0YO Lists for- Type No . Ind icat ion on Transistors. 2 SA t y p e Type No. 2 S A1 2 5 2 2SA1256 2 S A 12 5 7 2 S A1 3 3 1 2 S A13 3 8 2 S A 13 41 2 S A13 4 2 2SA1343 2 S A 13 4 4 2 S A 14 1 5 2 S A 14 1 6 2 S A 14 1 7 2 S A1 4 1 8 2 S A1 4 1 9 2 S A14 3 4	OCR Scan	2SA1256 2SA1343 2SA1655 2SK2167 2SK2168 2SK2170 2SK2171 2SK2260 2SK2218 2SK2219 2sk303 2SK283 sk184 SK174 2SK436 2SK848 P/N146071 2sd22	PDF
CDM62256-10 Abstract: No abstract text available Text: H A RR IS S E M I C O N D S E C T O R 37E D • 4 3 0 5 27 1 D D S a b S l 7 « H A S Random-Access Memories RAMs . T -4 6 -2 3 -1 4 CDM62256 A14- 1 28 — A t2 — 2 A7— Î 27 - W Ï 26 - At 3 AS — 4 A ft — 9 A 4 - 6 A3 — A2 — 7	OCR Scan	CDM62256 A14----A 768-Word 28-pin CDM62256-10 CDMS2258-10I CDM62256-12I -40336R	PDF
Untitled Abstract: No abstract text available Text: g £ SOLID STATE 3875081 ~ G E SOLID Öl DE \| 3ö?SGöl D017TÖ7 1 STATE 01E 17987 D _ !_ !_ !_ Signal Transistors MPS-A13, MPS-A14 T ,2 <7-27 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 1 3 a n d A 1 4 a re p la n a r e p ita x ia l p assivate d N PN silico n D a rlin g to n tra n s is to rs d e sig n e d fo r p re a m p lifie r in p u t a p p lic a tio n s w h e re h ig h im p e d a n c e is a	OCR Scan	D017T MPS-A13, MPS-A14 MPS-A13 MPS-A14 100kHz) 100kQ 300ps	PDF
transistor GW 93 H Abstract: 11 ak 30 a4 Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431231L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431231L 32K-WORD 32-BIT PD431231L 768-word 32-bit PD431231LGF transistor GW 93 H 11 ak 30 a4	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431632L 32K-WORD 32-BIT PD431632L 768-word 32-bit	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description • The µPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431532L 32K-WORD 32-BIT PD431532L 768-word 32-bit	PDF

Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431532L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT FLOW THROUGH OPERATION Description The µPD431532L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431532L 32K-WORD 32-BIT PD431532L 768-word	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431632L 32K-WORD 32-BIT PD431632L 768-word 32-bit	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431536L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT FLOW THROUGH OPERATION Description The µPD431536L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431536L 32K-WORD 36-BIT PD431536L 768-word 36-bit	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431231L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431231L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431231L 32K-WORD 32-BIT PD431231L 768-word PD431231LGF	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431636L 32K-WORD 36-BIT PD431636L 768-word 36-bit	PDF
TQFP 14X20 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431636L 32K-WORD 36-BIT PD431636L 768-word 36-bit TQFP 14X20	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431632L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 32-BIT PIPELINED OPERATION Description The µPD431632L is a 32,768-word by 32-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431632L 32K-WORD 32-BIT PD431632L 768-word 32-bit	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD431636L 1M-BIT CMOS SYNCHRONOUS FAST SRAM 32K-WORD BY 36-BIT PIPELINED OPERATION Description The µPD431636L is a 32,768-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using N-channel four-transistor memory cell.	Original	PD431636L 32K-WORD 36-BIT PD431636L 768-word 36-bit	PDF
Transistor A14 Abstract: No abstract text available Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type	Original	TS13002HV TS13002HVCT Transistor A14	PDF
Untitled Abstract: No abstract text available Text: TS13002HV High Voltage NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 450V BVCBO 900V IC 0.8A VCE SAT Features ● High Voltage ● High Speed Switching 0.6V @ IC=0.2A, IB=0.04A Block Diagram Structure ● Silicon Triple Diffused Type	Original	TS13002HV TS13002HVCT	PDF

A14 TRANSISTOR Search Results

A14 TRANSISTOR Result Highlights (5)

A14 TRANSISTOR Datasheets Context Search

mpsa14

MPS-A13

MPSA13

MPSA13M

EM51L256A-15J

EM51M256A-15P

EM51256C-15P

MPS-A15

2sk303

CDM62256-10

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transistor GW 93 H

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TQFP 14X20

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Transistor A14

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