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    TT electronics / BI Technologies P160KN-0QA14A1K

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    DigiKey P160KN-0QA14A1K Tray 5,280
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    Sager P160KN-0QA14A1K 1,320
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    TT electronics / BI Technologies P160KN2-0QA14A1K

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    DigiKey P160KN2-0QA14A1K Tray 5,940
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    TT electronics / BI Technologies P160KN2-0QA14A100

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    DigiKey P160KN2-0QA14A100 Tray 5,940
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    TT electronics / BI Technologies P160KNP-2QA14A100

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    DigiKey P160KNP-2QA14A100 Tray 5,500
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    Sager P160KNP-2QA14A100 1,100
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    TT electronics / BI Technologies P160KN2-4QA14A100

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    DigiKey P160KN2-4QA14A100 Tray 5,940
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    Sager P160KN2-4QA14A100 990
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    A14A1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T4 1060

    Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
    Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29EE512 SST29EE512512Kb S71060 S71060-09-000 T4 1060 SST29EE512-70-4I-NHE 32-PIN SST29EE512

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    X009

    Abstract: MGAB A10 fbnl MGAB
    Text: TEMx28 Device 21/28 Channel Dual Bus High Density Mapper TXC-04222 DESCRIPTION • Add/drop up to 28 E1, DS1, or VT/TU payloads from two add and two drop STM-1/VC4, STS-3 buses • Add bus and drop bus timing modes • Cross mapping applications DS1 mapped to/from


    Original     		PDF TEMx28 TXC-04222 VT2/TU-12s) TXC-04222-MB X009 MGAB A10 fbnl MGAB

    circuit card assy input filter for miller 200 Dx

    Abstract: 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32
    Text: TMS320C3x GeneralĆPurpose Applications User’s Guide 1998 Digital Signal Processing Solutions Printed in U.S.A., January 1998 SDS SPRU194 TMS320C3x General-Purpose Applications User’s Guide Literature Number: SPRU194 January 1998 Printed on Recycled Paper


    Original     		PDF TMS320C3x SPRU194 TMS320C3x circuit card assy input filter for miller 200 Dx 64 point radix 2 FFT LM318 list DSP101 74AS20 TTL radix-4 DIT FFT C code TLC32040C TMS320 TMS320C31 TMS320C32

    H 1061

    Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		PDF SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 S71061-11-000 H 1061 SST29VE010 SST29EE010-90-4C-NH

    K4C560838C-TCB

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


    Original     		PDF K4C5608/1638C 256Mb Orga41 K4C560838C-TCB

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    FM1808

    Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
    Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM1808 256Kb FM1808 256-kilobit MS-011 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S

    32107

    Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
    Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


    Original     		PDF SST27SF256 SST27SF256 32107 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721

    M69KB128AA

    Abstract: BCR10
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz M69KB128AA BCR10

    Untitled

    Abstract: No abstract text available
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM1808 256Kb 32Kx8 28-pin MS-011

    SST29EE010

    Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		PDF SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 SST29EE010" SST29VE010" SST29EE010-70-4C-PHE transistor 1061 SST29VE010

    Untitled

    Abstract: No abstract text available
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    lm814

    Abstract: ID32-001
    Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan     		PDF TC59LM814/06BFT-22 TC59LM814/06BFT TC59LM814BFT 304-words TC59LM806BFT LM814/06B FT-22 lm814 ID32-001

    Untitled

    Abstract: No abstract text available
    Text: H I T A C H I / LOGIC/ARRAYS/MEM S IE ]> • HN28F4001 Series D01753S 2TT ■ H IT 2 Preliminary 4M 512K x 8-bit Flash Memory ■ DESCRIPTION Th^ Hitachi HN28F4001 is a 4-Megabit CMOS Rash Memory organized as 524,288 x 8-bit. The HN28F4001 is capable of in-system electrical chip and block erasure and


    OCR Scan     		PDF HN28F4001 D01753S

    C5R5

    Abstract: Western Digital 68-PIN WD83C580A
    Text: WD83C580A PC Bus Interface Controller FEATURES • Direct interface to IBM PC1" expansion bus for most I/O adapter functions * o o' O y J S. o • Software enable for PC interrupt request • Software selection of PC DMA channels n / < o o • Handshaking control for two DMA channels on


    OCR Scan     		PDF WD83C580A 68-pin 1-800-NET W1606 C5R5 Western Digital

    stk 442 -130

    Abstract: xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR
    Text: MC68HC711D3/D Rev. 1 MC68HC711D3 TECHNICAL DATA MOTOROLA MC68HC711D3 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out


    OCR Scan     		PDF mc68hc711d3/d MC68HC711D3 suitabilitMC68HC711D3 MC68HC711D3/D 1ATX22547-4 stk 442 -130 xc68hc711 XC68HC711D3 M68HC711D3 C45A M68HC11EVM MC68HC11 MC68HC711D3 ic stk 441 EEPR

    GC102

    Abstract: 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406
    Text: G-TUO -CE} INC D 5 D E I 3 7 7 7 4 7 S OGGOOt ,4 S I i i u i u i 7v ; c i o 2 12/16MHz PC/AT Compatible C h ip set Features Description • Highly Integrated PC/AT Com­ patible Three Chip Set. The GC101/GC102 is a fully IBM PC/AT compatible chip set support­


    OCR Scan     		PDF 377747S 12/16MHZ 16MHz 12MHz GC101/GC102 16MHz. /RAS40 /RAS6080 RAS40 GC102 8088 motherboard schematics ASC 8.000MHz crystal oscillator cpu 416-2 DP CQA03 coa030 sd 7406 ero 1818 74ALS245 TI HA 7406

    Untitled

    Abstract: No abstract text available
    Text: DS1613D DALLAS DS1613D Partitioned SmartSocket 1M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Accepts standard 128K x 8, CMOS static RAM | Vcc A16 31 1 A15 A14 301 NC | WE 28 1 A13 32 • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data


    OCR Scan     		PDF DS1613D DS1613D 32-PIN

    CHIPset for 80286

    Abstract: SL6003 A1719 logicstar TL4A sl6005
    Text: ADDRESS & DATA BUS BUFFERS SL6003, SL6004, SL6005 17 PC/A T COMPATIBLE CHIP-SET W PRELIMINARY The SL6003 provides address latches and control buffers for the PC / AT system. Control signals from the SL6001 are buffered by the SL6003 and tri-stated for the expansion and the I/O buses. This


    OCR Scan     		PDF SL6003, SL6004, SL6005 SL6003 SL6001 68-pin SL6004 CHIPset for 80286 A1719 logicstar TL4A sl6005

    ZUA15

    Abstract: ZUA12
    Text: HM62W1400H Series 4194304-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203-773 Z Preliminary Rev. 0.0 Apr. 28, 1997 Description The HM62W1400H is an asyncronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process and high speed circuit


    OCR Scan     		PDF HM62W1400H 4194304-word ADE-203-773 400-mil 32-pin ns/12 ns/15 D-85622 ZUA15 ZUA12

    HM6207HLP-35

    Abstract: HM6207HLP-45
    Text: HM6207H Series 262,144-word x 1-bit High Speed CMOS Static RAM HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)


    OCR Scan     		PDF HM6207H 144-word 24-pin ADE-203Rev. HM6207HP-25 HM6207HP-35 HM6207HP-45 HM6207HLP-25 HM6207HLP-35 HM6207HLP-45

    manual for Misa

    Abstract: ruy 1015
    Text: AMD£I Am486 DX/DX2 Microprocessor Hardware Reference Manual AMD's Marketing Communications Department specifies environmentally sound agricultural irks and recycled papers, making this book highly recyclable. Am486™DX/DX2 Microprocessor Hardware Reference


    OCR Scan     		PDF Am486TMDX/DX2 for088-3453 Ban-3M-3/97-3 7965A manual for Misa ruy 1015