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    ITT Interconnect Solutions APK-SA16A07-002

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    ITT Interconnect Solutions APK-SA16A07-002-B-(SINGLE)

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    ITT Interconnect Solutions APK-PA16A07-002

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    TE Connectivity AGA-16-A03N

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    JRH Electronics AGA-16-A03N

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    A16A0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M95M01-D

    Abstract: M95M01-DF marking M95 m01d
    Text: M95M01-DF M95M01-R 1-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 1 Mb (128 Kbytes) of EEPROM – Page size: 256 bytes SO8 (MN) 150 mil width ■ Write


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    PDF M95M01-DF M95M01-R 200-year M95M01-D marking M95 m01d

    mc 6871 a

    Abstract: No abstract text available
    Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139F November 2000 – Revised May 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


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    PDF TMS320VC5410A SPRS139F TMS320VC5410A SPRS139F SPRS139E mc 6871 a

    Untitled

    Abstract: No abstract text available
    Text: PDM31034 PRELIMINARY 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High-speed access times Com’l: 9, 10, 12, 15 and 20 ns Ind’l.: 12, 15 and 20 ns Automotive: 15 and 20 ns n Low power operation typical - PDM31034SA


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    PDF PDM31034 PDM31034 PDM31034SA 32-pin 128Kx8)

    Untitled

    Abstract: No abstract text available
    Text: PDM31024LL PRELIMINARY 128K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31024LL Active: 50 mW Standby: 2µW The PDM31024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this


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    PDF PDM31024LL PDM31024LL 100ns 32-pin PDM31024 128Kx8)

    R36W

    Abstract: lnk303 samsung ltn LD3130 CRC10 MXT3010 R44-R47 M 8012 R54-R55 t9354
    Text: MXT3010 Reference Manual Version 4.1 Order Number: 100108-05 October 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the


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    PDF MXT3010 16-bit MXT3010 R36W lnk303 samsung ltn LD3130 CRC10 R44-R47 M 8012 R54-R55 t9354

    EDI8L24129V

    Abstract: No abstract text available
    Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution


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    PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V,

    AM188ES-33VC

    Abstract: IA186ES IA186ES-PQF100I IA186ES-PTQ100I IA188ES IA188ES-PQF100I IA188ES-PTQ100I DIMENSIONS pqfp 100
    Text: innovASIC IA186ES/IA188ES 8/16-BIT Microcontrollers Preliminary Data Sheet Copyright  2003  IA186ES/IA188ES Preliminary Data Sheet 8/16-BIT MICROCONTROLLERS Data Sheet Contents FEATURES .4


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    PDF IA186ES/IA188ES 8/16-BIT IA186ES-PQF100I IA186ES-PTQ100I IA188ES-PQF100I IA188ES-PTQ100I AM186ES-20KC\W AM186ES-20KI\W AM188ES-33VC IA186ES IA186ES-PQF100I IA186ES-PTQ100I IA188ES IA188ES-PQF100I IA188ES-PTQ100I DIMENSIONS pqfp 100

    Untitled

    Abstract: No abstract text available
    Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32VF201 / SST32VF202 / SST32VF401 / SST32VF402 SST32VF201 / 202 / 401 / 402SRAM (x16) ComboMemories Advance Information FEATURES: • MPF + SRAM ComboMemory – SST32VF201: 128K x16 Flash + 64K x16 SRAM – SST32VF202: 128K x16 Flash + 128K x16 SRAM


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    PDF SST32VF201 SST32VF202 SST32VF401 SST32VF402 402SRAM SST32VF201: SST32VF202: SST32VF401: SST32VF402:

    Untitled

    Abstract: No abstract text available
    Text: M95M01-R 1 Mbit Serial SPI bus EEPROM with high speed clock Preliminary Data Features • Compatible with SPI bus serial interface Positive Clock SPI modes ■ Single supply voltage: 1.8 V to 5.5 V ■ High speed – 5 MHz clock rate – 5 ms Write time


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    PDF M95M01-R 40-year

    Y52 h 85c

    Abstract: ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 HD66522 1DD01 Y148 y158 0F076
    Text: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display ADE-207-302(Z) '99.9 Rev. 0.0 Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


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    PDF HD66522 160-Channel ADE-207-302 HD66522 Y52 h 85c ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 1DD01 Y148 y158 0F076

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash


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    PDF LE28DW8163T-80T xxxx-19/20 xxxx-20/20

    BEST BIOS PROGRAMMING AND DATA FOR EEPROM

    Abstract: date code Sanyo semiconductor DTS13
    Text: Preliminary Specifications CMOS LSI LE28CV1001DT/DTS-13/15 1M-Bit 128k x 8 Page Mode EEPROM Features Single 3.3-Volt Read and Write Operations CMOS Flash EEPROM Technology Page-write Endurance Cycles: 104 10 Years Data Retention Low Power Consumption: Active Current: 20 mA (Max.)


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    PDF LE28CV1001DT/DTS-13/15 130ns LE28CV100 BEST BIOS PROGRAMMING AND DATA FOR EEPROM date code Sanyo semiconductor DTS13

    STK17TA8

    Abstract: STK17TA8-R
    Text: STK17TA8 128Kx8 Autostore nvSRAM With Real-Time Clock FEATURES DESCRIPTION • nvSRAM Combined With Integrated Real-Time Clock Functions RTC, Watchdog Timer, Clock Alarm, Power Monitor The Simtek STK17TA8 combines a 1Mb non-volatile static RAM (nvSRAM) with a full-featured real-time


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    PDF STK17TA8 128Kx8 STK17TA8 ML0025 STK17TA8-R

    SST32HF164-90-4E-EK

    Abstract: SST32HF162 SST32HF164 SST32HF802 SW-5520
    Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM


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    PDF SST32HF802 SST32HF162 SST32HF164 164MPF SST32HF802: SST32HF162: SST32HF164: MO-210, 48-BALL SST32HF164-90-4E-EK SST32HF164 SW-5520

    TMS320C5416 DSP

    Abstract: ic hm 2007 internal block diagram ,Architecture TMS320C5416 instruction set of TMS320C5416 tms320c5416 mcbsp example tms320c5416 enhanced peripherals
    Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139H November 2000 – Revised June 2006 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


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    PDF TMS320VC5410A SPRS139H TMS320VC5410A SPRS139H SPRS139G 16-Bit MSP430 MSP430X1XX TMS320C5416 DSP ic hm 2007 internal block diagram ,Architecture TMS320C5416 instruction set of TMS320C5416 tms320c5416 mcbsp example tms320c5416 enhanced peripherals

    IS61LP12832

    Abstract: IS61LP12832-166B IS61LP12832-166TQ IS61LP12832-200B IS61LP12832-200TQ IS61LP12836
    Text: IS61LP12832 IS61LP12836 ISSI 128K x 32, 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Linear burst sequence control using MODE input


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    PDF IS61LP12832 IS61LP12836 100-Pin 119-pin IS61LP12832 IS61LP12836 IS61LP12836-200TQ IS61LP12836-200B IS61LP12836-166TQ IS61LP12836-166B IS61LP12832-166B IS61LP12832-166TQ IS61LP12832-200B IS61LP12832-200TQ

    C5000

    Abstract: TMS320C5000 TMS320VC5410A TMS320VC541
    Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139H November 2000 – Revised June 2006 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


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    PDF TMS320VC5410A SPRS139H SPRS139G SPRS139H C5000 TMS320C5000 TMS320VC5410A TMS320VC541

    IS29F010-70PL

    Abstract: IS29F010
    Text: IS29F010 IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory PRELIMINARY OCTOBER 1998 FEATURES • High-performance CMOS – 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply – 5V ± 10% for Read, Program, and Erase


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    PDF IS29F010 32-pin IS29F010 IS29F010-45PLI IS29F010-45TI IS29F010-55PLI IS29F010-70PL

    Untitled

    Abstract: No abstract text available
    Text: m IS61SF12832 128K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 11 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals


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    PDF IS61SF12832 100-Pin 119-pin PK13197TÃ QGQGS55 17-1A T004404

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase


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    PDF IS29F010 program32 PK13197T32 T004404 00G05fc

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash


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    PDF EDI7F82048C EDI7F82048C 128Kx8 A17-A20 Q01fl34 EDI7F82048C120BSC EDI7F82048C150BSC EDI7F82048C200BSC

    JJ7N

    Abstract: No abstract text available
    Text: IS61SF12836 v 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 11 ns • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control


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    PDF IS61SF12836 100-Pin 119-pin i486TM, 68TION IS61SF12836-7 IS61SF12836-8TQ IS61SF12836-8B IS61SF12836-8 JJ7N

    IS29F010-70PL

    Abstract: No abstract text available
    Text: IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y Oc t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase


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    PDF IS29F010 IS29F010-45PLI IS29F010-45TI IS29F010-55PLI IS29F010-55TI IS29F010-70PLI IS29F010-70TI IS29F010-90PLI IS29F010-90TI FL006-1A IS29F010-70PL

    FE3020

    Abstract: FE3030 Western Digital microprocessor 80286 Word Size FE3010 FE3001A FE3031 8254 cascading FE3000A 80386SX
    Text: WESTERN DIGIT AL CORP SIE D • T?iaEEÔ OQOSÔS4 O l - S Z '3 3 - ìS ■ Advance Information FE3010B AT Peripheral Control Device □ □ □ □ □ 100% hardware and software compatible to the IBM* AT* 15 interrupt channels 3 timer channels 7 DMA channels


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    PDF FE3010B FE3400B FE3600B FE3010B 80386SX, FE3017. T-52-33-15 FE3010 84-Pln FE3020 FE3030 Western Digital microprocessor 80286 Word Size FE3001A FE3031 8254 cascading FE3000A 80386SX