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    A18 TRANSISTOR Search Results

    A18 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    A18 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    WJ-A18-1

    Abstract: 4582 transistor
    Text: WJ-A18-1 /SMA18-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW NOISE: 3.8 dB (TYP.) Outline Drawings A18-1 Specifications5*


    OCR Scan     		WJ-A18-1 /SMA18-1 A18-1 50-ohm 4582 transistor PDF

    A18-1

    Abstract: CA18-1 SMA18-1
    Text: Cascadable Amplifier 10 to 1000 MHz A18-1 / SMA18-1 V3 Features • • • • Product Image HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBM (TYP.) LOW NOISE: 3.8 dB (TYP.) Description The A18-1 RF amplifier is a discrete hybrid design, which uses


    Original     		A18-1 SMA18-1 MIL-STD-883 A18-1 CA18-1 SMA18-1 PDF

    A18-1

    Abstract: CA18-1 SMA18-1 A181 CA18 A18 transistor
    Text: A18-1 / SMA18-1 Cascadable Amplifier 10 to 1000 MHz Rev. V3 Features • • • • Product Image HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBM (TYP.) LOW NOISE: 3.8 dB (TYP.) Description The A18-1 RF amplifier is a discrete hybrid design, which uses


    Original     		A18-1 SMA18-1 MIL-STD-883 CA18-1 SMA18-1 A181 CA18 A18 transistor PDF

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180 PDF

    RF TRANSISTOR 1.5 GHZ

    Abstract: A18-1 CA18-1 SMA18-1
    Text: A18-1/SMA18-1 10 TO 500 MHz CASCADABLE AMPLIFIER • HIGH DYNAMIC RANGE · HIGH OUTPUT POWER: +16 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · LOW NOISE: 3.8 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics


    Original     		A18-1/SMA18-1 A18-1 SMA18-1 CA18-1 RF TRANSISTOR 1.5 GHZ A18-1 CA18-1 SMA18-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: A18-1/SMA18-1 10 TO 1000 MHz TO-8 CASCADABLE AMPLIFIER • HIGH DYNAMIC RANGE · HIGH OUTPUT POWER: +16 dBm TYP. · HIGH THIRD ORDER I.P.: +30 dBm (TYP.) · LOW NOISE: 3.8 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 4/02)* Characteristics


    Original     		A18-1/SMA18-1 A18-1 SMA18-1 CA18-1 PDF

    BC 148 TRANSISTOR

    Abstract: WJ-A18-1 wj 508 coto 1200
    Text: ü j j A18-1/SMA18-1 10 to 1000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE HIGH OUTPUT POWER: +16 dBm TYP. HIGH THIRD ORDER I.P.: +30 dBm (TYP.) LOW NOISE: 3.8 dB (TYP.) Outline Drawings A 1 8-1 Specifications’1


    OCR Scan     		A18-1/SMA18-1 50-ohm J1-4401 BC 148 TRANSISTOR WJ-A18-1 wj 508 coto 1200 PDF

    tahc10

    Abstract: AOtoA18 aft12
    Text: TOSHIBA TC51V8512AF/AFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51V8512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC51V8512AF/AFT-12 288-WORD TC51V8512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 775TYP tahc10 AOtoA18 aft12 PDF

    TC518512AF

    Abstract: TC518512
    Text: TOSHIBA T C 518512A F/AFT-70,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		18512A F/AFT-70 288-WORD TC518512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 TC518512AF TC518512 PDF

    TC518512

    Abstract: No abstract text available
    Text: TOSHIBA TC518512AF/AFT-70,-80,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC518512AF/AFT-70 288-WORD TC518512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 TC518512AF TC518512 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC51V8512AF/AFT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51V8512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC51V8512AF/AFT-12 288-WORD TC51V8512AF/AFT 304-bit 32-pin 525-inch OP32-P-525-1 TC51V8512AF PDF

    TC518512AF

    Abstract: C701 T
    Text: TOSHIBA TC518512AF/AFT-70V,-80V,-10V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC518512AF/AFT-70V 288-WORD TC518512AF/TC518512AFT 304-bit TC518512AF/AFT 32-pin 525-inchELF OP32-P-525-1 TC518512AF/AFT-70 TC518512AF C701 T PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518512FIvTl/FII/TOL-70 L'I /8QflJ)/10a3) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The


    OCR Scan     		TC518512FIvTl/FII/TOL-70 /10a3) TC518512PL 1CH724Ã D02bb2fl D-173 TC518512PL/FL/FTL/TRL-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC518512 AF/AFT-70 V,-80 V ,-10 V TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC518512AF/AFT is a 4,194,304-bit CMOS pseudo static random access memory PSRAM organized as 524,288 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to


    OCR Scan     		TC518512 AF/AFT-70 288-WORD TC518512AF/AFT 304-bit 32-pin OP32-P-525-1 PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210B (Z) Rev. 2.0 Apr. 16, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM62V8512C 512-kword ADE-203-1210B 525-mil 400-mil D-85622 Hitachi DSA00276 PDF

    Hitachi DSA002730

    Abstract: No abstract text available
    Text: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212A (Z) Rev. 1.0 Mar. 5, 2001 Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM628512C 512-kword ADE-203-1212A 525-mil 400-mil 600-mil D-85622 Hitachi DSA002730 PDF

    HM628512C

    Abstract: HM628512CLFP-5 HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5 HM628512CLP-5SL HM628512CLP-7 HM628512CLTT-5 HM628512CLTT-7 Hitachi DSA0015
    Text: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212B (Z) Rev. 2.0 May. 14, 2001 Description The Hitachi HM628512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM628512C 512-kword ADE-203-1212B 525-mil 400-mil 600-mil HM628512CLFP-5 HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5 HM628512CLP-5SL HM628512CLP-7 HM628512CLTT-5 HM628512CLTT-7 Hitachi DSA0015 PDF

    HM62V8512C

    Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA0015
    Text: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210C (Z) Rev. 3.0 Jul. 23, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM62V8512C 512-kword ADE-203-1210C 525-mil 400-mil HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA0015 PDF

    HM62V8512C

    Abstract: HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA00358
    Text: HM62V8512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1210A (Z) Rev. 1.0 Jan. 31, 2001 Description The Hitachi HM62V8512C is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor


    Original     		HM62V8512C 512-kword ADE-203-1210A 525-mil 400-mil HM62V8512CLFP-5 HM62V8512CLFP-5SL HM62V8512CLFP-7 HM62V8512CLFP-7SL HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLTT-7 HM62V8512CLTT-7SL Hitachi DSA00358 PDF

    TC518512

    Abstract: transistor D195
    Text: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er


    OCR Scan     		TC518512PL/FL/FTL/rRL-70LV/80LV/10LV TheTC518512PL TC518512PL TC518512PL-LV D-194 TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV D-195 TC518512 transistor D195 PDF

    TC518512FTL-70

    Abstract: No abstract text available
    Text: 5 2 4 ,2 8 8 W O R D S x 8 8 IT CMOS PSEUDO S T A T IC RAM PRELIMINARY D E S C R IP T IO N T he T C 5 1 8 5 1 2 P L F am ily is a 4M b it high speed CM OS Pseudo S tatic RAM organized as 5 2 4 ,2 8 8 words by 8 bits. T he T C 5 1 8 5 1 2 P L F am ily u tilizin g one transistor dynamic memory cell with CM OS


    OCR Scan     		TC518512PL TC518512PL/FL/FTUTRLâ TC518512FTL-70, 35MAX TC518512TRL TC518512FTL-70 PDF

    HM62W8511HCJPI

    Abstract: HM62W8511HCJPI-12 DSA003633
    Text: HM62W8511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1283A (Z) Rev. 1.0 Nov. 9, 2001 Description The HM62W8511HCI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing


    Original     		HM62W8511HCI 512-kword ADE-203-1283A 400-mil 36-pin D-85622 D-85619 HM62W8511HCJPI HM62W8511HCJPI-12 DSA003633 PDF

    HM628511CJPI12

    Abstract: HM628511HCI HM628511HCJPI HM628511HCJPI-12 DSA003633
    Text: HM628511HCI Series Wide Temperature Range Version 4M High Speed SRAM 512-kword x 8-bit ADE-203-1304A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM628511HCI Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed


    Original     		HM628511HCI 512-kword ADE-203-1304A 512-k 400-mil 36-pin D-85622 D-85619 HM628511CJPI12 HM628511HCJPI HM628511HCJPI-12 DSA003633 PDF

    HM62W8511HI

    Abstract: HM62W8511HJPI HM62W8511HJPI-15 Hitachi DSA00358
    Text: HM62W8511HI Series 4M High Speed SRAM 512-kword x 8-bit ADE-203-1036A(Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W8511HI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed


    Original     		HM62W8511HI 512-kword ADE-203-1036A 400-mil 36-pin HM62W8511HJPI HM62W8511HJPI-15 Hitachi DSA00358 PDF