A1924 TRANSISTOR Search Results

A1924 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

A1924 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.	Original	PDF	2SA1924
a1924 transistor Abstract: No abstract text available Text: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.	Original	PDF	2SA1924 a1924 transistor
a1924 transistor Abstract: 2SA1924 A1924 a1924 datasheet 024 marking code Text: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.	Original	PDF	2SA1924 a1924 transistor 2SA1924 A1924 a1924 datasheet 024 marking code
a1924 transistor Abstract: 2SA1924 A1924 2sa192 Text: 2SA1924 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V • Low saturation voltage: VCE sat = −1 V (max) Unit: mm (IC = −100 mA, IB = −10 mA) • Collector metal (fin) is fully covered with mold resin.	Original	PDF	2SA1924 a1924 transistor 2SA1924 A1924 2sa192
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	PDF	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
wiring diagram audio amplifier ic 6283 Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838 Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor	OCR Scan	PDF	4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838