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    A1941 TOSHIBA Search Results

    A1941 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1941 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-140 V / IC=-10 A / hFE=55~160 / VCE(sat)=-2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    A1941 TOSHIBA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Toshiba transistor a1941

    Abstract: A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198
    Text: A1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.


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    2SA1941 2SC5198 Toshiba transistor a1941 A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198 PDF

    a1941

    Abstract: Toshiba transistor A1941 A1941 TRANSISTOR transistor a1941 a1941 power transistor Toshiba transistor 2SC5198 A1941 data sheet a1941 specifications toshiba a1941 2SA1941 equivalent
    Text: A1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.


    Original
    2SA1941 2SC5198 a1941 Toshiba transistor A1941 A1941 TRANSISTOR transistor a1941 a1941 power transistor Toshiba transistor 2SC5198 A1941 data sheet a1941 specifications toshiba a1941 2SA1941 equivalent PDF

    Toshiba transistor A1941

    Abstract: a1941 A1941 TRANSISTOR toshiba a1941 A1941 TOSHIBA transistor a1941 a1941 specifications
    Text: A1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.


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    2SA1941 2SC5198 2-16C1A Toshiba transistor A1941 a1941 A1941 TRANSISTOR toshiba a1941 A1941 TOSHIBA transistor a1941 a1941 specifications PDF

    A1941 TRANSISTOR

    Abstract: No abstract text available
    Text: A1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.


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    2SA1941 2SC5198 A1941 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: A1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.


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    2SA1941 2SC5198 PDF

    Toshiba transistor A1941

    Abstract: a1941 2SA1941 datasheet toshiba a1941 Toshiba transistor 2SA1941 A1941 TRANSISTOR Toshiba transistor 2SC5198 transistor a1941 A1941 circuits a1941 specifications
    Text: A1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.


    Original
    2SA1941 2SC5198 Toshiba transistor A1941 a1941 2SA1941 datasheet toshiba a1941 Toshiba transistor 2SA1941 A1941 TRANSISTOR Toshiba transistor 2SC5198 transistor a1941 A1941 circuits a1941 specifications PDF

    a1941

    Abstract: toshiba a1941 2SA1941 A1941 TOSHIBA 2SA1941 equivalent 2SC5198 pnp 2sa1941
    Text: 2SA1941 東芝トランジスタ シリコンPNP三重拡散形 2SA1941 ○ 電力増幅用 単位: mm • 高耐圧です。: VCEO = −140 V 最小 • 2SC5198 とコンプリメンタリになります。 • 70 W ハイファイオーディオアンプ出力段に最適です。


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    2SA1941 2SC5198 2-16C1A a1941 toshiba a1941 2SA1941 A1941 TOSHIBA 2SA1941 equivalent 2SC5198 pnp 2sa1941 PDF