A1952 TRANSISTOR Search Results

A1952 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

A1952 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A1952 Abstract: transistor A1952 MARKING A1952 BTA1952I3 a1952 transistor C601I3 transistor BTC5103I3 Text: Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952I3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A	Original	C601I3 BTA1952I3 -100V BTC5103I3 O-251 UL94V-0 A1952 transistor A1952 MARKING A1952 BTA1952I3 a1952 transistor C601I3 transistor BTC5103I3	PDF
transistor A1952 Abstract: A1952 MARKING A1952 a1952 transistor A1952 R Q BTA1952J3 BTC5103J3 Text: Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952J3 BVCEO IC RCESAT -100V -5A 150mΩ Features • Low VCE sat , VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A	Original	C601J3 BTA1952J3 -100V BTC5103J3 O-252 UL94V-0 transistor A1952 A1952 MARKING A1952 a1952 transistor A1952 R Q BTA1952J3 BTC5103J3	PDF
a1952 Abstract: transistor A1952 IC 4047 a1952 transistor IC 4047 datasheet MARKING A1952 BTA1952E3 Text: CYStech Electronics Corp. Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1952E3 Features • Low VCE sat , VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics	Original	C601E3-A BTA1952E3 O-220AB UL94V-0 a1952 transistor A1952 IC 4047 a1952 transistor IC 4047 datasheet MARKING A1952 BTA1952E3	PDF
A1952 Abstract: transistor A1952 BTA1952J3 BTC5103J3 MARKING A1952 Text: Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2004.09.17 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA1952J3 Features • Low VCE sat , VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A • Excellent DC current gain characteristics	Original	C601J3 BTA1952J3 BTC5103J3 O-252 UL94V-0 A1952 transistor A1952 BTA1952J3 BTC5103J3 MARKING A1952	PDF
2sa1952 Abstract: No abstract text available Text: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)	Original	2SA1952 SC-63) OT-428> 2SC5103 A1952 R1102A 2sa1952	PDF
A1757 Abstract: C5103 transistor A1952 2SA1757,A1757 Text: 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 Transistors I •F e a tu re s •A b s o lu te maximum ratings Ta—2 5 t 1) 2) 3) 4) Param eter C ollector-base v o lta le Coliector-em itter voitaae Em itter-base voltage High-speed Switching Transistor 2SA1952 / 2SA1906 / 2SA1757	OCR Scan	2SA1952 2SA1906 2SA1757 2SC5103 2SC4596 O-220FP A1757 C5103 transistor A1952 2SA1757,A1757	PDF