WMS512K8V-XCX
Abstract: No abstract text available
Text: White Electronic Designs 512Kx8 MONOLITHIC SRAM ADVANCED* FEATURES EVOLUTIONARY PINOUT • Access Times 70, 85, 100, 120ns 32 DIP 32 CSOJ DE ■ MIL-STD-883 Compliant Devices Available ■ Low Voltage Operation TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2
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512Kx8
120ns
MIL-STD-883
WMS512K8V-XCX
WMS512K8V-XCX
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 3 V Volt a ge St a bilize r Features Description • Low Temperature Coefficient • Low Dynamic Resistance • Typical Reference Voltage of 33V The KA33V is a monolithic integrated voltage stabilizer especially designed as voltage supplier for electronic tuners.
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KA33V
KA33V
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available
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WMS512K8-XXX
512Kx8
120ns
MIL-STD-883
A0-18
120ns
100ns
01HYX
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c 4072
Abstract: WMS512K8-XXX
Text: White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ DE • Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available
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Original
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WMS512K8-XXX
512Kx8
120ns
MIL-STD-883
01HYX
100ns
02HYX
03HYX
04HYX
c 4072
WMS512K8-XXX
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three phase bridge inverter
Abstract: three phase pulse generator 3 phase waveform generator three phase bridge inverter in 120 degree ultrasonic generator 1 Mhz Marconi bridge rectifier p circuit diagram of pulse width modulation INTEL I7 microprocessor circuit diagram marconi signal generator marconi electronic devices ltd
Text: ! Marconi Electronic Devices Three Phase Pulse Width Modulation Waveform Generator MA818 PRELIMINARY DATA SHEET _^ 40] VDD U 39 A IO E M A9 Œ FEATURES * Fully digital operation A8 AD3 La AD4 r? 36| A7 E 35] A6 E 3^ A5 E 33] A4 5 32l A3 m 3Ï1 A2 * 'S ile n t' inverter operation possible
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MA818
three phase bridge inverter
three phase pulse generator
3 phase waveform generator
three phase bridge inverter in 120 degree
ultrasonic generator 1 Mhz
Marconi bridge rectifier p
circuit diagram of pulse width modulation
INTEL I7 microprocessor circuit diagram
marconi signal generator
marconi electronic devices ltd
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 7 8 R0 5 Low Dropout Volt a ge Re gulat or Features Description • • • • • The KA378R05 is a low-dropout voltage regulator suitable for various electronic equipments. It provides constant voltage power source with TO-220 4 lead full mold package.
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KA378R05
O-220
O-220F-4L
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23425
Abstract: No abstract text available
Text: White Electronic Designs 2x512Kx8 DUALITHIC SRAM PRELIMINARY* FEATURES PIN CONFIGURATION FOR WS1M8-XCX • Access Times 70, 85, 100ns 32 DIP ■ Evolutionary, Corner Power/Ground Pinout TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
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2x512Kx8
100ns
512Kx8
23425
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 7 8 R3 3 Low Dropout V olt a ge Re gula t or Features Description • • • • • The KA378R33 is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.
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KA378R33
O-220
O-220F-4L
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Untitled
Abstract: No abstract text available
Text: www.fairchildsemi.com K A3 7 8 R1 2 C Low Dropout Volt a ge Re gula t or Features Description • • • • • The KA378R12C is a low-dropout voltage regulator suitable for various electronic equipments. It provide constant voltage power source with TO-220 4 lead full mold package.
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KA378R12C
O-220
A/12V
O-220F-4L
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
of128K
300ns
250ns
200ns
150ns
140ns
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WME128K8-XXX
Abstract: No abstract text available
Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES FIG. 1 • Read Access Times of 120, 140, 150, 200, 250, 300ns PIN CONFIGURATION 32 DIP 32 CSOJ TOP VIEW NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
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WME128K8-XXX
128Kx8
300ns
MIL-STD-883
04HYX
140ns
05HYX
120ns
06HYX
WME128K8-XXX
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs 2x512Kx8 DUALITHIC SRAM ADVANCED* PIN CONFIGURATION FOR WS1M8V-XCX FEATURES • Access Times 17, 20, 25, 35, 45, 55ns 32 DIP TOP VIEW A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
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2x512Kx8
512Kx8
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LTL-201
Abstract: LTL-231 diode e4e LTL-211 LTL-221 LTL-251 LTL-291
Text: ^-_TAIIilAN LITÔN ELECTRONIC 2 ME ]> • fl A3 SS 47 00 002 42 1 T-l 3mm SOLID STATE LAMPS LTL-231 LTL-251 LTL-291 LTL-201 R E D LTL-211 BR IG H T R E D LTL-221 H IG H E F F IC IE N C Y R E D SPECIALIST GREEN YELLOWORANGE FEATURES • LOW POWER CONSUMPTION.
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LTL-201
LTL-211
LTL-221
LTL-231
LTL-251
LTL-291
diode e4e
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EDH411MN-10
Abstract: EDH411MN-12 EDH411MN-15
Text: Electronic Designs ln< - ' . EDH411MN-10/12/15 . < ^ ^ \ s v • -» •» V \ ' »v • PINOUTS VC C RASO DOUT A3 A6 □ IN WE RÂS1 AO A7 A8 C AS RAS2 c C C c c c C 8 c 9 c 17 C 18 C vc c vss • C om m on D IN /D O U T lines w ith separate RAS co ntro l
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EDH411MN-10/12/15
EDH411MN
EDH411MN-10
EDH411MN-12
EDH411MN-15
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block diagram of of TMS320C4X
Abstract: EDI8L32512C20AI DSP96002 EDI8L32256C EDI8L32512C TMS320C32 EDI8L32512C15AI
Text: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory
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EDI8L32512C
512Kx32
EDI8L32512C
DSP96002
TMS320C3x,
TMS320C4x
TMS320C30/C31
TMS320C32
DSP9Q09
block diagram of of TMS320C4X
EDI8L32512C20AI
DSP96002
EDI8L32256C
TMS320C32
EDI8L32512C15AI
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TMS320C4X
Abstract: DSP96002 EDI8L32256C EDI8L32512C TMS320C32 ADQ28 MO-47
Text: White Electronic Designs EDI8L32512C 512Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP memory
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EDI8L32512C
512Kx32
EDI8L32512C
DSP96002
TMS320C3x,
TMS320C4x
TMS320C30/C31
TMS320C32
TMS320C4X
DSP96002
EDI8L32256C
TMS320C32
ADQ28
MO-47
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MO-47AE
Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Text: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES ADSP-21060L SHARC ADSP-21062L (SHARC) Texas Instruments TMS320LC31 The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and
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EDI8L32512V
512Kx32
ADSP-21062L
TMS320LC31
EDI8L32512V
ADSP-21060L
MPC860
MO-47AE
ADSP-21060L
ADSP-21062L
EDI8L32128V
MPC860
TMS320LC31
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EDI8L32512V-AC
Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Text: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC
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EDI8L32512V
512Kx32
EDI8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
EDI8L32512V-AC
EDI8L32128V
MO-47AE
MPC860
TMS320LC31
ADSP-21060L
ADSP-21062L
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ADSP-21060L
Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
Text: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC
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EDI8F32512V
512Kx32
EDI8F32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
512Kx8,
ADSP-21060L
ADSP-21062L
EDI8L32128V
MO-47AE
MPC860
TMS320LC31
ADSP2106XL
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5962-96691
Abstract: CERAMIC LEADLESS CHIP CARRIER wms128k8 WMS128K8-XXX smd mark 601 8 pin
Text: White Electronic Designs WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 MIL-STD-883 Compliant Devices Available Commercial, Industrial and Military Temperature Range • 36 lead Ceramic Flat Pack (Package 226)
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WMS128K8-XXX
128Kx8
MIL-STD-883
05HXX
06HXX
07HXX
08HXX
09HXX
10HXX
11HXX
5962-96691
CERAMIC LEADLESS CHIP CARRIER
wms128k8
WMS128K8-XXX
smd mark 601 8 pin
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available Revolutionary, Center Power/Ground Pinout JEDEC
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128Kx8
WMS128K8-XXX
MIL-STD-883
t2-96691
08HYX
09HYX
10HYX
11HYX
05HXX
06HXX
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EDI8L32512V
Abstract: No abstract text available
Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.
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EDI8L32512V
512Kx32
EDI8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
EDI8L32512C
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PDF
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EDI8L32512V-AC
Abstract: 8L32512V
Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution
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EDI8L32512V
512Kx32
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
M0-47AE
EDI8L32512V
EDI8L32512V-AC
8L32512V
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PDF
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cd 5151
Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution
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EDI8L32512V
512Kx32
EDI8L32512V
ADSP-21060L
ADSP-21062L
TMS320LC31
MPC860
EDI8L32512C
cd 5151
ADSP-21060L
ADSP-21062L
MPC860
TMS320LC31
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PDF
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