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    A44 TRANSISTOR Search Results

    A44 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    A44 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BR A44

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    OT-89-3L OT-89-3L 100mA BR A44 PDF

    BR A44

    Abstract: TRANSISTOR A44 To92 transistor
    Text: A44 A44 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage V(BR)CBO: 400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


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    30MHz BR A44 TRANSISTOR A44 To92 transistor PDF

    TRANSISTOR A44

    Abstract: BR A44
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES y High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 1. EMITTER Value Units VCBO Collector-Base Voltage


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    100mA 30MHz TRANSISTOR A44 BR A44 PDF

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.625 2. BASE W (Tamb=25℃) Collector current ICM: 3. COLLECTOR 0.2 A 1 2 3 Collector-base voltage


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    30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO


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    30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: A44 YOUDA TRANSISTOR SI NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    300mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 A44 TRANSISTOR NPN 1.EMITTER FEATURES z High Breakdown Voltage 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


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    100mA 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: A44 YOUDA TRANSISTOR Si NPN TRANSISTOR—A44 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 400V *Collector current up to 300mA *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


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    300mA PDF

    BD5431

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: PACKAGE: FEATURES: HTSSOP-A44 BD5431EFS 1 2) 3) 4) 5) 6) Differential Analog / PWM inputs High efficiency and low heat generation eliminates external heat-sinks


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    BD5431EFS HTSSOP-A44 R1120A BD5431 PDF

    TRANSISTOR A44

    Abstract: BR A44 datasheet of ic 555 IC 555 A44 npn
    Text: A44 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES * High voltage * High Reliability 1 2 3 1 2 3 1 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol


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    01-Jun-2002 270TYP 050TYP TRANSISTOR A44 BR A44 datasheet of ic 555 IC 555 A44 npn PDF

    IC 555

    Abstract: datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR( NPN ) TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W 2.BASE (Tamb=25℃) Collector current 3. COLLECTOR ICM : 0.2 A Collector-base voltage


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    O--92 30MHz 270TYP 050TYP IC 555 datasheet of ic 555 A44 transistor datasheet ic 555 IC 571 TRANSISTOR A44 IC 555 DATASHEETS A44 npn transistors a44 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors DIP Type NPN Transistors A44 Features 1. OUT High voltage 1 Emitter 2. GND 2 Base 3. IN 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage


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    100uA, 100mA 30MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR NPN TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 3. COLLECTOR Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage


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    30MHz PDF

    A44 npn

    Abstract: No abstract text available
    Text: A44 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO 5 V IC


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    100mA 30MHz A44 npn PDF

    BR A44

    Abstract: No abstract text available
    Text: A44 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.2 A Collector-base voltage V (BR)CBO :400 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


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    100uS BR A44 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1/7 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: BD5427EFS PACKAGE: FEATURES: HTSSOP-A44 1 2) High efficiency and low heat generation eliminates external heat-sinks Eliminates pop noise generated when the power supply goes on/off, or when the power supply is


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    BD5427EFS HTSSOPA44 PDF

    Industrial Drives

    Abstract: No abstract text available
    Text: V23990-P630-A44-PM flow 90PIM 1 1200V/25A Features flow 90PIM 1 ● Trench Fieldstop Technology IGBT4 for low saturation loss ● Supports design with 90° mounting angle between heatsink and PCB ● Clip-in PCB mounting ● Clip or screw on heatsink mounting


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    V23990-P630-A44-PM 90PIM 200V/25A Industrial Drives PDF

    Untitled

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE: PRODUCT: Silicon monolithic integrated circuits Stereo Class-D Power Amplifier For Speaker TYPE: PACKAGE: FEATURES: HTSSOP-A44 BD5424EFS 1 2) 3) 4) 5) 6) 7) High efficiency and low heat generation eliminates external heat-sinks Eliminates pop noise generated when the power supply goes on/off, or when the power supply


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    BD5424EFS HTSSOPA44 PDF

    Untitled

    Abstract: No abstract text available
    Text: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8


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    CEN-A44 CEN-A45 CEN-A45A CEN-A44, EN-A45 MPS-A44, MPS-A45 100mA PDF

    A45A

    Abstract: CEN-A45A CEN-A44 CEN-A45 MPS-A44 MPS-A45 TRANSISTOR A44 TRANSISTOR a45 MPSA44
    Text: CENTRAL nflnb3 oooD3t.a i i ,-p a s - a s SEMICONDUCTOR CEN-A44 CEN-A45 c e n -a 4s a @5{?^L£^¡iíe^e@9e esEsieEñgaB NPN SILICON TRANSISTOR . 'HIGH VOLTAGE € @ g it r ü i JEDEC TO-92 CASE EBC 1 4 5 A d a m s A ve n u e H auppauge, N e w Y o rk 1 1 7 8 8


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    cen-a44 cen-a45 cen-a45a to-92 CEN-A44, EN-A45 CEN-A45A MPS-A44, MPS-A45 100mA A45A MPS-A44 TRANSISTOR A44 TRANSISTOR a45 MPSA44 PDF

    SGA-4486

    Abstract: A44 marking amplifier pin configuration transistor A44 TRANSISTOR A44 "Bipolar Transistor" A44
    Text: Product Description Stanford Microdevices’ SGA-4486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current


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    SGA-4486 SGA-4486 EDS-100643 A44 marking amplifier pin configuration transistor A44 TRANSISTOR A44 "Bipolar Transistor" A44 PDF

    4463 B

    Abstract: TRANSISTOR A44 "Bipolar Transistor" A44 A44 marking amplifier SGA-4463 pin configuration transistor A44 ZL 15 a
    Text: Product Description Stanford Microdevices’ SGA-4463 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


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    SGA-4463 DC-3500 SGA-4463 EDS-100644 4463 B TRANSISTOR A44 "Bipolar Transistor" A44 A44 marking amplifier pin configuration transistor A44 ZL 15 a PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


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    PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit PDF

    TRANSISTOR A44

    Abstract: BR A44
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor NPN Silicon MPSA44 M otorola P referred Device EMITTER 1 MAXIM UM RATINGS 3 Rating Symbol Value Unit C ollector-E m itter Voltage v CEO 400 Vdc C ollector-B ase Voltage VCBO 500 Vdc E m itter-B ase Voltage


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    MPSA44 O-226AA) TRANSISTOR A44 BR A44 PDF