Untitled
Abstract: No abstract text available
Text: SKKD 701 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 IJKL IJJL I P@QQ PUQQ P[QQ I PBQQ P?QQ PVQQ B@QQ BBQQ Symbol Conditions MGCI MGKL 2^' Rectifier Diode Modules SKKD 701 # 2' 23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8
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Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 40V / 1.0A SSCD104TH FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency
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SSCD104TH
OD-121
50mVP-P
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B57513
Abstract: 58A9
Text: CDEA9FACBA9888888888888888888888888888888888 68E46776281C2 A*+899,-+89.F"3 C63#76& D6&27!/3!4 D E-05%52 2435-5$8 0 E5' E5%543'.5+5%54333 $B8#5 ,B7FC5 5?E67$5 8#5 9DAFD5 #8 5 6789AB8CD5 EF8ADA9J#5 7D7AF5 !F9$9FAB5 9AF##5 B75 B7#5 >FF5
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CBA9888888888888888888888888888888888
6789AB8CD5
FA87CC85
F59FA
F985AB79
D85D8
BC85F"
95EF9
433G5H
B57513
58A9
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Untitled
Abstract: No abstract text available
Text: ## ! ! If^S # ! ! D#:A0<&<,9=4=>:< #<:/?.>%?88,<C 6LHZ[XLY R 3DEDH;E5:;@9& , -8AC,& , R(BE;?;K76E75:@A>A9J8AC 5A@G7CE7CD ) 9H ,( J ' ,A@?3I )&- [ $9 )*( 6 )# R*F3>;8;76355AC6;@9EA$ 8ACE3C97E3BB>;53E;A@D
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355AC6;
E3C97Eà
E7DE76
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Untitled
Abstract: No abstract text available
Text: # # "%&$!"# &! # # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY 1 9I R D;@9> 7 * : 3 @@7>;@ * % R + F3 > ;8;76 3 55AC6;@9 $ . 9I"]\#$[Oe # 8ACE3 C 97E3 BB>;53 E ;A@D R U AB7C3 E;@9 E7? B7C3 E FC7 K [" 1
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726-IPD068P03L3G
IPD068P03L3
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79ac
Abstract: No abstract text available
Text: If^S $ $ " " b "%&$!"# $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9H R 3 DEDH;E5: ;@9 & , - 8AC, & ) , ' , A@? R ( BE;? ;K76 E75: @A>A9J 8AC 5A@G7CE7CD R * F3 > ;8;76 3 55AC6;@9 EA $ )# 3I $9 ,( J ,&0 [" /( 6
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Untitled
Abstract: No abstract text available
Text: # # &! ##:A0<&<,9=4=>:< #<:/?.>%?88,<C 6LHZ[XLY 1 9I RD;@9>7* :3@@7>;@*% . 9I"]\#$[Oe K 1 .&0 [ 1 & )# R+F3>;8;76355AC6;@9$ 8ACE3C97E3BB>;53E;A@D R UAB7C3E;@9E7?B7C3EFC7
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355AC6;
E3C97Eà
E7DE76
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8A978
Abstract: 1D.G A978 A4t 92
Text: If^S # ! ! ` "%&$!"# # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY 9H R 3 DEDH;E5: ;@9 & , - 8AC, & ) , ' , A@? R ( BE;? ;K76 E75: @A>A9J 8AC 5A@G7CE7CD R * F3 > ;8;76 3 55AC6;@9 EA $ )# 3I $9 ,( J -&* [" /( 6
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Untitled
Abstract: No abstract text available
Text: If^S $ $ " " b "%&$!"# $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9H R 3 DEDH;E5: ;@9 & , - 8AC, & ) , ' , A@? R ( BE;? ;K76 E75: @A>A9J 8AC 5A@G7CE7CD R * F3 > ;8;76 3 55AC6;@9 EA $ )# 3I $9 ,( J .&- [" -( 6
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Untitled
Abstract: No abstract text available
Text: # # "%&$!"# &! # # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY 1 9I R D;@9> 7 * : 3 @@7>;@ * % R + F3 > ;8;76 3 55AC6;@9 $ . 9I"]\#$[Oe # 8ACE3 C 97E3 BB>;53 E ;A@D R U AB7C3 E;@9 E7? B7C3 E FC7 K [" 1
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Untitled
Abstract: No abstract text available
Text: # # ! ! If^S # ! ! "%&$!"#D # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY 9H R 3 DEDH;E5: ;@9 & , - 8AC, & ) , ' , A@? R ( BE;? ;K76 E75: @A>A9J 8AC 5A@G7CE7CD R * F3 > ;8;76 3 55AC6;@9 EA $ )#
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smd a4t
Abstract: A4T SOT23 A4t+29+smd
Text: Philips Semiconductors Product specification High-speed double diode BAV70 FEATURES DESCRIPTION • Sm all plastic SM D package The BAV 70 consists of two high-speed sw itching diodes with com m on cathodes, fabricated in planar technology, and encapsulated
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BAV70
MAM383
smd a4t
A4T SOT23
A4t+29+smd
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A4t 65
Abstract: No abstract text available
Text: I n ter n a t/onal SF161 thru SF166 S e m ic o n d u c to r , I n c . SUPER FAST RECOVERY, G LASS PASSIVATED, PLASTIC RECTIFIERS VOLTAGE - 50 TO 400 Volts CURRENT - 16.0 Ampere FEATURES MECHANICAL DATA • Molded Case Epoxy carries Underwriters Laboratory
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SF161
SF166
T0-220A,
MIL-S-202,
TGDQ37Ö
A4t 65
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N82S137BA
Abstract: No abstract text available
Text: Philips Components-Signetics Document No. 8 5 3 -0 1 2 8 ECN No. 864 8 7 Date of Issue N ove m b e r 11, 1986 82S137A 82S137B Status P ro du ct S p ecification 4K-bit TTL bipolar PROM M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 8 2 S 1 3 7 A and 82S 13 7 B are field
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82S137A
82S137B
N82S137A
N82S137B
750S1,
N82S137BA
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MB501 prescaler
Abstract: divide by 100 prescaler 1GHZ DIVIDE BY 64 PRESCALER SP8704 SA701D 64/65 dual modulus prescaler divide 5 prescaler 128 dual modulus prescaler eel -16-2005 divide by 5 prescaler
Text: Philips Semiconductors Product specification Divide by: 128/129-64/65 dual modulus low-power ECL prescaler DESCRIPTION FEATURES The SA701 is an advanced dual modulus Divide By 128/129 or 64/65 low power ECL prescaler. The minimum supply voltage is 2.7V and is compatible with the CMOS
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SA701
SA701
UMA1005
7110a2ti
0Dfl373T
oma374Q
MB501 prescaler
divide by 100 prescaler
1GHZ DIVIDE BY 64 PRESCALER
SP8704
SA701D
64/65 dual modulus prescaler
divide 5 prescaler
128 dual modulus prescaler
eel -16-2005
divide by 5 prescaler
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transistor A4t 45
Abstract: transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15
Text: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • E n h a n ce m e n t m ode Type Vbs <D f f DS on Package Ordering Code BU Z 50 A 1000 V 2.5 A 5 a T O -2 2 0 A B C 6 7 0 7 8-A 1 3 0 7 -A 3 Maximum Ratings Symbol Parameter Drain so u rce v o lta g e
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O-220
C67078-A1307-A3
023Sfc
0535bOS
transistor A4t 45
transistor A4t
A4t transistor
transistor A4t 2d
diode a4t
transistor A4t 16
A4t 07
C67078-A1307-A3
TRANSISTOR ML5
transistor a4t 15
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EIA-449
Abstract: No abstract text available
Text: Ul IN T E G R A T E D C IR C U IT S UCC5305 U N IT R Q D E ADVANCED INFORMATION Synchronous Modem Control Transceiver FEATURES DESCRIPTION • Modem Interface Transceiver, 4 Drivers and 6 Receivers Switch, 2 Drivers and 2 Receivers EIA232E/ EIA423A/CCITT V.28/V.10 Only
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UCC5305
EIA232E/
EIA423A/CCITT
EIA232E/CCITT
EIA422A/CCITT
EIA530
UCC5305
EIA232E/EIA423A/CCITT
EIA-449
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC 3fiE D b l U S M T D0027ÖS fi BiflRN m T -M -ii-o Ç t [iUiiW 4K X 4 SRAM SRAM WITH SEPARATE INPUTS AND OUTPUTS FEATURES PIN ASSIGNMENT Top View « High speed: 12,15,20,25,30 and 35ns • High-performance, low-power, CMOS double metal
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D0027Ã
MT5C16Q6-
MT5C16Q7-output
T-46-23-08
GDQ27e
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smd a4t
Abstract: A4t 3 smd A4t smd WS57C291B-45TMB AM27S191 N82S191 WS57C191 WS57C291B-45KMB 35P marking 100 microfarad
Text: WS57C191B/291B HIGH SPEED 2Kx 8 CMOS PROM/RPROM FOR MAINTENANCE PURPOSES ONLY! NOT TO BE USED FOR NEW DESIGNS. SEE WS57C191 C/291 C FOR NEW VERSION! KEY FEATURES • Ultra-Fast Access Time _ 3 5 ns • Pin Compatible with Am27S191/291 and N82S191 Bipolar PROMs
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WS57C191
B/291
WS57C191C/291C
Am27S191/291
N82S191
WS57C191B/291B
coun7C291B-45TI
WS57C291B-45TMB*
MIL-STD-883C
WS57C291B-50TMB*
smd a4t
A4t 3 smd
A4t smd
WS57C291B-45TMB
AM27S191
WS57C291B-45KMB
35P marking
100 microfarad
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Untitled
Abstract: No abstract text available
Text: AN7109S AN7109S 2-channel Recording / Playback Pre / Power Amplifier IC for Headphone Stereo Unit : mm • Description The AN7109S is a monolithic integrated circuit designed for reco rd ing playback pre / pow er am p lifier so far constituted by 3 ICs. This IC allows low-end and process
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AN7109S
AN7109S
28-Lead
SO-28D)
Contro700
001375G
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marking A4t 95
Abstract: A7417
Text: EÜÉMMk&fcAC 3flE D MICRON TECHNOLOGY INC • b lllS M T GGOSTtH ^ ■P IR N T - ü L - lX - n Q 4K X 4 SRAM SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 12,15,20,25,30 and 35ns • High-performance, low-power, CMOS double metal process • Single +5V (±10%) pow er supply
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20L/300
24L/300
193A3
T-46-23-08
QQG2775
marking A4t 95
A7417
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Untitled
Abstract: No abstract text available
Text: M I CR ON T E C H N O L O G Y INC 3ÔE D blllSHT GQG2745 ? iMRN 64K X 1 SRAM SRAM FEATURES PIN ASSIGNMENT Top View -12 -15 -20 -25 -30 -35 > 1—1 MARKING • Timing 12ns access 15ns access 20ns access 25ns access 30ns access 35ns access (A-6, B-6) OPTIONS
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GQG2745
22L/300
T-46-23-05
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JRC 2355
Abstract: PWM Power Control Circuit APAA NJM2355 dead time control
Text: U b ò NJM2355 3 TW O OUTPUT HIGH VOLTAGE SWITCHING REGULATOR • GENERAL DESCRIPTION ■ PACKAGE OUTLINE New JRC's high voltage switching regulator, NJM2355, is a mono lithic high voltage 50V max operation integrated circuit consisting of two channel PWM controlers.
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NJM2355
NJM2355,
NJM2355
ijm2355d
200-mA
100mA)
JRC 2355
PWM Power Control Circuit
APAA
dead time control
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Untitled
Abstract: No abstract text available
Text: Features • Fast Read Access Time - 70 ns • Low Power CMOS Operation 100 |^A max. Standby 30 mA max. Active at 5 MHz • JEDEC Standard Packages 32-Lead 600-mii PDIP 32-Lead 450-mil SOIC SOP 32-Lead PLCC 32-Lead TSOP • 5 V ± 10% Supply • High Reliability CMOS Technology
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32-Lead
600-mii
450-mil
AT27C040
AT27C040
304-bit
MO-142
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