Untitled
Abstract: No abstract text available
Text: M M O TO R O LA Military 54LS05 Hex 1-In p u t In v e rte r G ate MPO m ini ELECTRICALLY TESTED PER: MIL-M-38510/30004 AVAILABLE AS: LOGIC DIAGRAM V cc A6 Y6 A5 Y5 M Y4 1) JAN: JM 3851Q/30004BXA 2) SMD: * 3) 883C. 54LS05/BXAJC X = CASE OUTLINE AS FOLLOWS:
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54LS05
MIL-M-38510/30004
3851Q/30004BXA
54LS05/BXAJC
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54als04
Abstract: No abstract text available
Text: M MOTOROLA M ilitary 5 4 A L S0 4 Hex 1-In p u t In v e rte r G ate ELECTRICALLY TESTED PER: MPG54ALS04 AVAILABLE AS: LOGIC DIAGRAM VC c A6 Y6 A5 V5 P«1 P»1 M FH N A4 Y4 \T\ [~5~| 1) JAN: N/A 2) SMD: N/A 3) 883C: 54ALS04/BXAJC X = CASE OUTLINE AS FOLLOWS:
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MPG54ALS04
54ALS04/BXAJC
54als04
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Untitled
Abstract: No abstract text available
Text: T T WS512K8-XCX M/HITE M IC R O ELE C TR O N IC S 512Kx8 SRAM MODULE FEATURES FIG. 1 • PIN CONFIGURATION TOP VIEW A 1 8C 1 ^ 32 U Vcc A 16C 2 A 14C 3 31 Ü A 15 30 U A17 A 1 2H 4 29 H WE A7C 5 28 H A13 A6 C 6 27 H A8 A5 C 7 26 H A9 A4 E 8 A3 C9 A 2 C 10
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WS512K8-XCX
512Kx8
120nS
100nS
01HXX
02HXX
03HXX
04HXX
05HXX
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Untitled
Abstract: No abstract text available
Text: 77 M/HITE /MICROELECTRONICS WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c ess T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 E 1 A16 C 2 ^ 32 U Vcc A14C 3 30 29 A7 H 5 28 C6 27 A5 E 7 26 A4 C 8 25 A3 A2 C9 C 10 S ta n d a rd M ic ro c irc u it D ra w in g , 5962-92078
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WS512K8-XCX
512Kx8
IL-STD-883
06HTX
07HTX
08HTX
09HTX
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Untitled
Abstract: No abstract text available
Text: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7
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WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
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1221H
Abstract: A12C White Microelectronics 14 PIN DIP WS128K8-XCX
Text: WHITE /MICROELECTRONICS WS128K8-XCX 128Kx8 SRAM MODULE FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW n c E 1 W 32 13 Vcc A16C 2 31 H A15 A 14C 3 30 □ nc A 1 2 |I 4 29 U we A7 C 5 27 □ A8 A5Ü 7 26 □ A9 A4 C 8 25 □ A11 C9 24 □ ÖE A 2 C 10 23 □ A10
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WS128K8-XCX
128Kx8
1/00C
L/02C
AO-16
MlL-STD-883
MIL-STD-883
25riS
06HXX
1221H
A12C
White Microelectronics 14 PIN DIP
WS128K8-XCX
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Untitled
Abstract: No abstract text available
Text: WS128K8-XCX I/I/HITE / M I C R O E L E C T R O N I C S 128Kx8 SRAM MODULE FEATURES FIG. 1 • A cce ss T im e s 55 to 120nS PIN CONFIGURATION NC E 1 ^ 1 A15 31 A14C 3 A12 C 4 29 U WE A7 C 5 28 J A13 A6 H 6 27 H AS A5 E 7 26 □ A9 30 H NC 25 I ] A11 A3 C 9
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WS128K8-XCX
128Kx8
120nS
MIL-STD-883
93156-06HXX
93156-07HXX
93156-08HXX
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TXC Corporation
Abstract: Crystal Oscillator TXC
Text: TXC CORPORATION 4F, NO. 16, Sec. 2 Chung Yang S Rd., Peitou, Taipei, Taiwan. TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL CUSTOMER : PRODUCT TYPE : SMD SEAM SEALING CXO 5.0*3.2 NOMINAL FREQ.
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Original
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000000MHz
7C24000012
MIL-STD-202F
MIL-STD-883E
1000Hrs
C5023
RH100%
240Hrs
C6701
TXC Corporation
Crystal Oscillator TXC
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VAOL-S12YP4
Abstract: No abstract text available
Text: v y ® OPTOELECTRONICS lig h tin g :th e w a y 1206 SMD TYPE LED VAOL-S12YP4 Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • •
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VAOL-S12YP4
VAOL-S12YP4
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Untitled
Abstract: No abstract text available
Text: WS512K8-XCX H i- R E U A B IL iT Y P R O D U C T 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A ccess Tim es 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A 1 8C 1 'w / ■ Standard M icrocircuit Drawing, 5962-92078 ■ MIL-STD-883 Com pliant D evices A vailab le
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WS512K8-XCX
512Kx8
MIL-STD-883
07HTX
09HTX
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Untitled
Abstract: No abstract text available
Text: a WS512K8-XCX WHITE /MICROELECTRONICS 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 • A c c e ss T im e s 20, 25, 35, 45ns PIN CONFIGURATION TOP VIEW A18 C A16 C A14 C A12 C A7 H A6 C A5 C A4 C A3 C A2 C A1 C AOC i/ooC 1/01 C I/02 □ GNDC 1 2 3 4 5
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WS512K8-XCX
512Kx8
IL-STD-883
512KX
06HTX
07HTX
08HTX
09HTX
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Untitled
Abstract: No abstract text available
Text: 1206 SMD TYPE LED OPTOELECTRONICS VAOL-S12YP4 ligh ting:thew ay Features • Fit automatic placement equipment. • Fit Compatible with infrared and vapor phase reflow solder process. • Pb-free. • RoHS compliant. Descriptions • • • • • For higher packing density .
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VAOL-S12YP4
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54LS04
Abstract: 54LS04/BCAJC
Text: MOTOROLA M ilitary 5 4 L S 0 4 H ex-Input Inverter G a te MP0 ELECTRICALLY TESTED PER: MIL-M-38510/30003 mini LOGIC DIAGRAM Vcc A6 Y6 A5 Y5 A4 V4 AVAILABLE AS: 1 JAN: JM38510/30003BXA 2) SMD: N/A 3)883: 54LS04/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C
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MIL-M-38510/30003
JM38510/30003BXA
54LS04/BXAJC
56A-02
54LS04
54LS04/BCAJC
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Untitled
Abstract: No abstract text available
Text: W M ilita ry 5 4 F 1 4 M O TO R O LA . H e x In v e rte r S ch m itt Trigger M P O mini ELECTRICALLY TESTED PER: 5962-8875201 AVAILABLE AS: 1) JAN: N/A 2) SMD: 5962-8875201 3)883: 54F14/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D LCC: 2
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54F14/BXAJC
56A-02
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Untitled
Abstract: No abstract text available
Text: MT5C2561 883C 256K X 1 SRAM MILITARY SRAM • • • • PIN ASSIGNMENT Top View SMD 5962-88725 JAN M 38510/293 MIL-STD-883, Class B Radiation tolerant (consult factory) 24L/300 DIP (D-9) A0 C1 -W24 ]Vcc A1 [ 2 23 ]A17 A2 Û3 22 PA16 21 ]A15 A3 A4 20 ]A14
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MT5C2561
MIL-STD-883,
24L/300
MIL-STD-883
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10SC4M
Abstract: f10sc4
Text: S /a v M * - K U 7 S W Schottky Barrier Diode - I * O U T LIN E D IM E N S IO N S DF10SC4M U nit • mm P a c k a g e I S T O -2 2 0 10 . 2 ± a : M 40 V 10 A 0 .5 ±a @ Date code ati^i_ 2 Type No. 05 Ö 10SC4M m a Polarity >SMD Il >Tjl50°C >Prrsm t j ^ y ' j I ffiti
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DF10SC4M
10SC4M
Tjl50
T-74S
J515-5
10SC4M
f10sc4
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PDF
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y6 smd transistor
Abstract: y4 smd transistor smd diode y4 smd transistor y5 IC 4094 smd transistor y3 y2 smd transistor smd a7 SMD a7 Transistor smd transistor A5
Text: ACTS541MS S E M I C O N D U C T O R Radiation Hardened Octal Three-State Buffer/Line Driver January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96726 and Harris’ QM Plan
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ACTS541MS
MIL-PRF-38535
600mm
600mm
y6 smd transistor
y4 smd transistor
smd diode y4
smd transistor y5
IC 4094
smd transistor y3
y2 smd transistor
smd a7
SMD a7 Transistor
smd transistor A5
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PDF
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Y1 smd
Abstract: 5962F9671201VCC 5962F9671201VXC ACTS04HMSR ACTS04MS
Text: ACTS04MS S E M I C O N D U C T O R Radiation Hardened Hex Inverter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96712 and Harris’ QM Plan
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ACTS04MS
MIL-PRF-38535
MIL-STD-1835
CDIP2-T14,
2240mm
2240mm
Y1 smd
5962F9671201VCC
5962F9671201VXC
ACTS04HMSR
ACTS04MS
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PDF
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Untitled
Abstract: No abstract text available
Text: M ilita ry 54F 1 4 MOTOROLA H e x In v e rte r S c h m itt Trigger ELECTRICALLY TESTED PER: 5962-8875201 M P O l/I/W AVAILABLE AS: 1 JAN: N/A 2) SMD: 5962-8875201 3)883: 54F14/BXAJC X = CASE OUTLINE AS FOLLOWS: PACKAGE: CERDIP: C CERFLAT: D LCC: 2 LOGIC DIAGRAM
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54F14/BXAJC
56A-02
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5962R9571401QRC
Abstract: 5962R9571401QXC 5962R9571401VRC 5962R9571401VXC HS-82C08RH
Text: HS-82C08RH S E M I C O N D U C T O R Radiation Hardened 8-Bit Bus Transceiver February 1996 Features Functional Diagram • Devices QML Qualified in Accordance With MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-95714 and Harris’ QM Plan
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Original
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HS-82C08RH
MIL-PRF-38535
SA2997
-55oC
125oC
1-800-4-HARRIS
5962R9571401QRC
5962R9571401QXC
5962R9571401VRC
5962R9571401VXC
HS-82C08RH
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PDF
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SK-520
Abstract: No abstract text available
Text: SMD Schottky Barrier Rectifiers CDBA520-G Thru. CDBA5200-G Reverse Voltage: 20 to 200 Volts Forward Current: 5.0 Amp RoHS Device Features DO-214AC SMA -Low Profile surface mount applications in order to optimize board space. -Low power loss, high efficiency.
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CDBA520-G
CDBA5200-G
DO-214AC
UL94-V0
DO-214AC
QW-BB037
CDBA520-G
CDBA540-G
CDBA560-G
CDBA5100-G
SK-520
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PDF
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Untitled
Abstract: No abstract text available
Text: ACTS245MS Semiconductor Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96719 and Harris’ QM Plan
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ACTS245MS
MIL-PRF-38535
MIL-STD-1835
CDIP2-T20,
125kA
05A/cm
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PDF
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Untitled
Abstract: No abstract text available
Text: TT W MS512K8-XXX M/HITE /M ICROELECTRONICS 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 PRELIM INA RY* FEATURES • A c c e s s T im e s 17, 2 0 , 2 5, 3 5, 4 5, 5 5n S C o m m e r c ia l, In d u s tr i a l a n d M i l i t a r y T e m p e r a t u r e fla n g e ■
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MS512K8-XXX
512Kx8
05HZX
06HZX
07HZX
08HZX
09HZX
10HZX
512KX
05HXX
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PDF
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Untitled
Abstract: No abstract text available
Text: ACS245MS Semiconductor Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96707 and Harris’ QM Plan
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OCR Scan
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ACS245MS
MIL-PRF-38535
MIL-STD-1835
CDIP2-T20,
125kA
05A/cm2
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