A13B
Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits
|
Original
|
AS9C25512M2018L
19-bit
A13B
DQ17A-DQ0A
A14B
DQ4a
DQ11A
|
PDF
|
DQ20A
Abstract: A17a DQ18A be2a A13B
Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits
|
Original
|
AS9C25256M2036L
18Gbps
18-bit
DQ20A
A17a
DQ18A
be2a
A13B
|
PDF
|
A17A
Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]
|
Original
|
AS9C25256M2036L
AS9C25128M2036L
256/128K
18Gbps
A17A
A15A
a17b
diode A14A
A11A
A13A
A14A
AS9C25128M2036L
AS9C25256M2036L
be0b
|
PDF
|
A17a
Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Text: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]
|
Original
|
AS9C25512M2018L
AS9C25256M2018L
512/256K
A17a
a17b
A18B-A0B
diode A14A
A14A
A15A
A16A
AS9C25256M2018L
AS9C25512M2018L
DQ17A
|
PDF
|
P6SBMJ24A
Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current
|
Original
|
A40CA
5SCMJ120CA
5SCMJ130CA
5SCMJ150CA
5SCMJ160CA
5SCMJ170CA
5SCMJ180CA
5SCMJ200CA
P6SBMJ24A
B17C
B14A
A17a
B14A equivalent
MARKING A19c
marking A32A
P4SSMJ24A
A12A
a32a
|
PDF
|
MCM67B518
Abstract: MCM72BB32 MCM72BB64 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72BB32SG and MCM72BB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge
|
Original
|
256KB
512KB
MCM72BB32SG
MCM72BB64SG
256K/512K
MCM67B518
MCM67B618
MCM72BB32
MCM72BB64
MCM72BB64
Nippon capacitors
|
PDF
|
MCM67C518
Abstract: MCM67C618 MCM72CB32 MCM72CB64 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72CB32SG and MCM72CB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge
|
Original
|
256KB
512KB
MCM72CB32SG
MCM72CB64SG
256K/512K
MCM67C518
MCM67C618
MCM72CB32
MCM72CB64
MCM72CB64
Nippon capacitors
|
PDF
|
B14A equivalent
Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse
|
Original
|
11ACE
TVSP05PT
OT-23
LTVSJ12ESPT
LTVSJ15ESPT
SC-79
B14A equivalent
zener b14a
P6SBMJ24A
B17C
tvs2315pt
TVSS5VESPT
diode B14A
B14A zener equivalent
A17a
P4SSMJ24A
|
PDF
|
MCM67C518
Abstract: MCM67C618 MCM72CF32 MCM72CF64 Nippon capacitors
Text: MOTOROLA Order this document by MCM72CF32/D SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium MCM72CF32 MCM72CF64 160–LEAD CARD EDGE CASE 1113A–01 TOP VIEW 1 The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.
|
Original
|
MCM72CF32/D
256KB
512KB
MCM72CF32
MCM72CF64
MCM72CF32SG
MCM72CF64SG
256K/512K
MCM67C518
MCM67C618
MCM72CF32
MCM72CF64
Nippon capacitors
|
PDF
|
cea 141
Abstract: A5A 103 A5A 101 D4047
Text: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •
|
OCR Scan
|
64-bit
32/64/128K
A4-16
D32-39
256/512/1024KB
D08-15
D16-23
cea 141
A5A 103
A5A 101
D4047
|
PDF
|
arcotronics 1.27
Abstract: No abstract text available
Text: ARCOTRONICS SMD - Film Capacitors PEN dielectric - LDE Series • General technical data Plates Winding Termination Marking Climatic category Aluminium layer deposited by evaporation under vacuum. Non inductive type - Stacked technology. Three layers: Aluminium, Brass and Tin alloy.
|
OCR Scan
|
50Vdc
63Vdc
250Vdc
400Vdc
630Vdc
1000pF
arcotronics 1.27
|
PDF
|
2SD103
Abstract: 2SD102 2SB502A 2SD102-R 2SD102-Y 2SD103-R AC74
Text: 2SD ' SILICON NPN DIFFUSED JUNCTION TRANSISTOR 2SD o o o o a DC — DC it X m æ INDUSTRIAL APPLICATIONS Audio Power Amplifier, Power Switching, DC-DC Converter and Regulator Applications. Unit in mm » » « E i W h S V ' : VCE eat — Q 5 V (Typ.) ^ ^ 9 ?
|
OCR Scan
|
2SD102)
2SD103)
SB502A
SB503Ai
2SB502A
8SB503A
2SD102
2SD103
2SD103
2SD102
2SD102-R
2SD102-Y
2SD103-R
AC74
|
PDF
|
btb 137
Abstract: No abstract text available
Text: HI High- Performan ce 256/512/1024 KB vie 3.3V SRAM Module AS7M64f*3256 AS7M64P3512 AS7M64P31024 Low Voltage 256/512/1024 KByte Asynchronous Sit AM Module . PIN ARRANGEMENT FEATURES 80 pin dual-readout DIMM - Same pinout for 256/512/1024KB - Same pinout for burst mode 64B3256
|
OCR Scan
|
64-bit
AS7M64P3256:
AS7M64P3512:
AS7M64P31024
AS7M64P31024-15)
AS7M64f
AS7M64P3512
AS7M64P31024
256/512/1024KB
64B3256
btb 137
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High-Performance 256/512/1024 KByte SRAM Module : AS7M64Ï*256 AS7M64P5Ï2 AS7M64PI024 WÊ 256/512/1024 KByte Asynchronous SRAM Module I PIN ARRANGEMENT FEATURES 80-pin dual-readout DIMM - Same pinout for 256/512/1024KB - Burst-mode control signals - No motherboard jumpers required
|
OCR Scan
|
AS7M64Ã
AS7M64P5Ã
AS7M64PI024
80-pin
256/512/1024KB
64-bit
AS7M64P256:
AS7M64P512:
AS7M64P1024
AS7M64P1024-15)
|
PDF
|
|
|
nec 2761
Abstract: l021 IP276
Text: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE _ , u P D 1 6 4 2 1 SOURCE DRIVER FOR 120-OUTPUT TFT-LCD CAPABLE OF ACCOMMODATING UP TO 8 TONES The /JPD16421 is a source driver for TFT-LCD and can accommodate up to 8 tones.
|
OCR Scan
|
120-OUTPUT
uPD16421
12-bit
PD16421
M27S25
PD16421
b45752S
/IPD16421
nec 2761
l021
IP276
|
PDF
|
motorola l6 lcd
Abstract: 5555P
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview LCD Segment / Common Driver with Controller MC141598 CMOS MC141598 is a CMOS LCD Driver which consists of 133 high voltage LCD driving signals to drive either 100-Segment and 33-Common display or 99-Segment and 34Common display. It has 6800-series, 8080-series parallel interface and Serial Periph
|
OCR Scan
|
MC141598
100-Segment
33-Common
99-Segment
34Common
6800-series,
8080-series
MC141598T1
98ASL10036A,
motorola l6 lcd
5555P
|
PDF
|
6116 SRAM
Abstract: IZ48
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72B F32S G and M C M 72B F64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r the Pentium m icroprocessor.
|
OCR Scan
|
256KB
512KB
MCM72BF32
MCM72BF64
72BF32
MCM72BF32SG66
MCM72BF64SG66
MCM72BF32SG60
MCM72BF64SG60
6116 SRAM
IZ48
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.
|
OCR Scan
|
256KB
512KB
MCM72CF32SG
MCM72CF64SG
256K/512K
MCM67C518
MCM67C618
MCM72CF64SG66
72CF32
72CF64
|
PDF
|
gx 6101 d
Abstract: CHE 6100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72BB32SG and M C M 72BB64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor. The
|
OCR Scan
|
256KB
512KB
72BB32SG
72BB64SG
67B618
MCM72BB32
MCM72BB64
MCM72BB64SG66
72BB32
72BB64
gx 6101 d
CHE 6100
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ T h e M C M 72C B 32S G and M C M 72C B64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor.
|
OCR Scan
|
256KB
512KB
B64SG
72CB32
72CB64
MCM72CB32SG66
MCM72CB64SG66
VCM72CB32SG80
VCM72CB64SG80
MCM72CB32SG100
|
PDF
|
C1B4
Abstract: cq51 c17f C01A MC68HC11E2 motorola mc 8602 258 c014 motorola cmos C100 microcontroller application 9704 258 c017
Text: Simple Interface for 68HC11 to MICROWIRE “Chip Security” EEPROMs Application Note 909 •■■■■■■■■■ SEMICONDUCTOR TM BRIEF OVERVIEW OF THE NM93CSxx FEATURES ABSTRACT Fairchild’s NM93 CSxx Family of serial EEPROMs offers sophis ticatedprotection against accidentaloverwrites from power surges,
|
OCR Scan
|
68HC11
tocontroltheNM93CSxx
NM93CSxx
C1B4
cq51
c17f
C01A
MC68HC11E2
motorola mc 8602
258 c014
motorola cmos C100 microcontroller
application 9704
258 c017
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
HY514100B
4L750Ã
000413b
1AC09-10-MA
HY514100BJ
HY514100BLJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
HY514100B
HY514100B
4b750Ã
000413b
1AC09-10-MAY95
HY514100BJ
HY514100BLJ
|
PDF
|
ICCA100
Abstract: 2CB32
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72CB32 MCM72CB64 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ T h e M C M 72C B 32S G and M C M 72C B 64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache for the Pentium m icroprocessor.
|
OCR Scan
|
MCM72CB32
MCM72CB64
256KB
512KB
618FN
72CB64SG66
MCM72CB32SG66
MCM72CB64SG66
MCM72CB32SG80
MCM72CB64SG80
ICCA100
2CB32
|
PDF
|
