beaglebone black
Abstract: KE4CN2H5A-A58 D2516EC4BXGGB NC107 MTFC4GLDEA
Text: A B C D C B A6A A6 1. Changed R46, R47,R48 to 0 ohms. 2. Changed R45 to 22 Ohms. Change was made due to production failures on some boards due to differences in impedances. A5C 5 4 THERE IS NO WARRANTY FOR THIS DESIGN , TO THE EXTENT PERMITTED BY APPLICABLE LAW. EXCEPT WHEN OTHERWISE STATED
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2n2840
Abstract: No abstract text available
Text: <^£mi- 2onda.ctoi ^Pi ,fine. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N2840 Silicon Unijunction Transistor absolute maximum ratings: (25°C) 300 50 2 30 35 -65 to+150 -65 to +175 Power Dissipation*
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2N2840
2n2840
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BS9100
Abstract: a5c capacitor
Text: Baseline Management A Dedicated Facility / BS9100 Requirements Baseline Products — A Selection of Options As a matter of course, AVX maintains a level of quality control that is sufficient to guarantee whatever reliability specifications are needed. However, AVX
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BS9100
a5c capacitor
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Untitled
Abstract: No abstract text available
Text: >45C Metallized Polyester Capacitors Preform Case Type X678 Stocked In Local Distribution H T I— J/A5C i f - •II * i! 1 7| .197~tor.236 LS • Industry Standard Box Sizes • Self-Healing Metallized Polyester Dielectric • Flame Retardant Box Style to
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UL94V-0
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TMS2764
Abstract: 2732A eprom PSRI 2764j
Text: TMS2764 65,536-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY JULY 1983 - REVISED NOVEMBER 1985 J PACKAGE Organization . . . 8 1 9 2 X 8 ITOP VIEW Single 5-V Power Supply 1 V J28 ] V c c 27 ] PGM 2 26 ]N C 3 25 ] A 8 4 24 > 9 A5C 5 23 ]A 1 1 A4C 6 22 : g A3C 7
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TMS2764
536-BIT
S2764---
2764JP4
2732A eprom
PSRI
2764j
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10MILLISECOND
Abstract: No abstract text available
Text: TMS27P32A 32,768-BIT PROGRAMMABLE READ-ONLY MEMORY ADVANCE INFORMATION NOVEMBER 1 985 N PACKAGE Organization . . . 4 0 9 6 X 8 TOP VIEW Single 5-V Power Supply A7 C 1 LJ24 U v e e 23 □ a s A6 C 2 22 U A 9 A5C 3 21 D a i 1 A4C 4 20 H G / V p p A3 C S 19 I ) A 1 0
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TMS27P32A
768-BIT
TNIS27P32A-25
TMS27P32A-30
TMS27P32A-45
TMS27P32A
A0-A11
10MILLISECOND
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Untitled
Abstract: No abstract text available
Text: XTW hite Technology, Inc. □ vcc A18 [ I 1 32 A16 C 2 31 □ A15 A14C 3 30 □ A17 A12C 4 29 □ WE A7 □ 5 28 H A13 A6 C 6 27 □ A8 A5C 7 26 □ A9 A4 C 8 25 □ A11 A3 C 9 24 □ OE A2 C 10 23 □ A10 □ cs A1 C 11 22 A O C 12 21 □ 1/07 l/OOH 13 20 □ 1/06
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WS-512K8-XPX
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a5c capacitor
Abstract: sharp mask rom LH5316000 64 pin CMOS MASK ROM
Text: LH5316000/ FEATURES • 2,097,152 x 8 bit organization Byte mode 1,048,576 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Power consumption: CMOS 16M (2M x 8 / 1M x 16) Mask Programmable ROM
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LH5316000/
64-pin,
750-mil
LH5316000
64-PIN
LH5316000
SDIP64-P-750)
a5c capacitor
sharp mask rom
64 pin CMOS MASK ROM
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DT-26S
Abstract: DS9032 DS-VT200 daiwa DS-VT-200 dallas ds9032
Text: DS12S4 PALLAS DS1284 SEM ICO NDUCTO R Watchdog Timekeeper Chip FEATURES PIN ASSIGNMENT • Keeps track of hundredths of seconds, seconds, min utes, hours, days, date of the month, months, and years INTAC XI C • Watchdog timer restarts an out-of-control processor
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DS12S4
DS1284
28-pin
28-PIN
DS1284
DT-26S
DS9032
DS-VT200
daiwa
DS-VT-200
dallas ds9032
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Untitled
Abstract: No abstract text available
Text: DS1284 DALLAS DS1284 Watchdog Timekeeper Chip SEMICONDUCTOR FEATURES PIN ASSIGNMENT • Keeps track of hundredths of seconds, seconds, min utes, hours, days, date of the month, months, and years INTAC X1 C 21 « □ VCC 21 !7=] WE id n INTB INTB 25 □ VBAT
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DS1284
28-pin
11VBAT
DS1264
DS1284
28-PIN
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Untitled
Abstract: No abstract text available
Text: AT27C400 Features • • • • • • • • • • • Fast Read Access Time - 70 ns Word-wide or Byte-wide Configurable 4 Megabit Flash and Mask ROM Compatible Low Power CMOS Operation - 100 nA Maximum Standby - 50 mA Maximum Active at 5 MHz Wide Selection of JEDEC Standard Packages
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AT27C400
40-Lead
48-Lead
DesAT27C400-12TC
AT27C400-12PI
AT27C400-12RI
AT27C400-12TI
AT27C400-15PC
AT27C400-15RC
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Untitled
Abstract: No abstract text available
Text: CMOS 1M 128K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH53H0900 is a high speed mask-programmable ROM organized as 131,072 x 8 bits (1,048,576 bits). It is fabricated using silicon-gate CMOS process tech
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32-pin,
600-mil
525-mil
LH53H0900
32-PIN
32DIPI
32-pln,
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LH53820
Abstract: LH538200 lh538200d20 LH538 lh5382
Text: CMOS 8M 1M FEATURES • 1,048,576 x 8 bit organization • Access time: 200 ns (MAX. • Power consumption: Operating: 275 mW (MAX.) x 8) Mask Program mable ROM DESCRIPTION The LH538200 is a mask programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using
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LH538200
32-pin,
600-mil
28-pin
32-PIN
LH538200
DIP32-P-600)
LH538200D-20
LH53820
lh538200d20
LH538
lh5382
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Untitled
Abstract: No abstract text available
Text: CMOS 24M 1.5M x 16 MROM FEATURES • 1,572,864 words PIN CONNECTIONS x 16 bit organization 42-PIN DIP TOP VIEW • Access time: 150 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Package: 42-pin, 600-mil DIP
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42-PIN
42-pin,
600-mil
LH5324A00
24M-bit
LH5324A00
42DIP
DIP042-P-0600)
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Untitled
Abstract: No abstract text available
Text: C M OS 2M 256K x 8 M ask-Program m able ROM FEATURES • 262,144 x 8 bit organization • Access time: 120/150 ns (MAX.) • Low power consumption: Operating: 275 mW (MAX.) DESCRIPTION The LH532100B is a mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using
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LH532100B
32-pin,
600-mil
525-mil
32-PIN
32-Din,
DIP32-P-600)
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lh531
Abstract: LH531000B LH531000BN-S LH531000B-S
Text: L H ^ I n n O R l v / V * v u v - C ^ CMOS 1M 128K x 8 w _ 3 V-D rive M a sk-P ro g ram m a ble ROM FEATURES DESCRIPTION • 131,072 words x 8 bit organization The LH531000B-S is a mask-programmable ROM organized as 131,072 x 8 bits. It is fabricated using
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LH531000B-S
28-pin,
450-mil
LH531000B-S
28-pin
LH531000B
lh531
LH531000BN-S
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DIC14
Abstract: No abstract text available
Text: CMOS 8M 1M x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,048,576 • Access time: 120 ns (M AX.) • Low-power consumption: x 8 bit organization 32-PIN DIP 1• A 19E Operating: 330 m W (M AX.) Standby: 550 TO P VIEW / \ 32 □ Vex: A ie C 2 31 ID A 18
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32-PIN
32-pin,
600-m
525-m
LH538R00A
LH536
I-------12
DIC14
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Untitled
Abstract: No abstract text available
Text: Features • Fast Read Access Tim e - 45 ns • Low-Power CMOS Operation - 100 jiA max. Standby - 20 mA max. Active at 5 MHz • JEDEC Standard Packages - 28-Lead 600-mii PDIP - 32-Lead PLCC - 28-Lead TSOP and SOIC • 5 V ± 10% Supply • High-Reliability CMOS Technology
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28-Lead
600-mii
32-Lead
AT27C512R
AT27C512R
288-bit
org008(
28-Lead,
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Untitled
Abstract: No abstract text available
Text: C M O S 8M 1M x 8 M ask-Program m able RO M FEATURES PIN CONNECTIONS • 1,048,576 x 8 bit organization 32-PIN DIP TOP VIEW • Access time: 120 ns (MAX.) • Programmable output enable • Fully-static operation • TTL compatible I/O • Three-state outputs
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32-PIN
32-pin,
600-mil
525-mil
LH538R00A
LH538R00A
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Untitled
Abstract: No abstract text available
Text: LH538300C CMOS 8M 1M x 8 Mask-Programm able ROM PIN CONNECTIONS FEATURES • 1,048,576 words x 8 bit organization • Access time: 150 ns (MAX.) 3 2 -P IN D IP 3 2 -P IN S O P T O P V IE W A 19C • Low-power consumption: Operating: 275 mW (MAX.) Standby: 550
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LH538300C
32-pin,
600-mil
525-mil
400-mil
32-pln,
LH538300C
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Untitled
Abstract: No abstract text available
Text: LH538700A PRELIMINARY CMOS 8M 1M x 8 Mask-Programm able ROM FEATURES • 1,048,576 words PIN CONNECTIONS x 8 bit organization • Access time: 100 ns (MAX.) TOP VIEW 32-PIN DIP 32-PIN SOP A 19C 1• A 16C 2 31 ^ A10 , 5C 3 30 D a 17 A 12H a • Static operation
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LH538700A
32-PIN
32-pin,
600-mil
525-mil
400-mil
LH538700A
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cp2c
Abstract: Pin TO PIN compatible maxim
Text: GOULD INC/ GOULD A H I 40E D 4055^ 0013530 b • A M I 4M Bit 256K x 16 Static CMOS Mask ROM ■> GOULD A M I .»Semiconductors . Preliminary Data Sheet S634096(256K x 16) Features fieneral Description • Programmable organization 262,144 words by 16 bits (word mode)
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S634096
200ns
150ns
200ns
100pF
cp2c
Pin TO PIN compatible maxim
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Untitled
Abstract: No abstract text available
Text: WS57C71C HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power C onsum ption • Fast Program m ing • ESD Protection Exceeds 2000V GENERAL D ESCRIPTION The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory
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WS57C71C
WS57C71C
MIL-STD-883C
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A-1435
Abstract: No abstract text available
Text: • 4,194,304 words x 8 bit organization Byte mode 2,097,152 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 126 mW (MAX.) Standby: 108 (iW (MAX.) • Static operation • Three-state outputs • Low power supply: 2.7 V to 3.6 V
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LH53V32500
44-pin,
600-mil
48-pin,
44-PIN
LH53V32500
32M-bit
LHS3V32500
48TSOP
TSOP048-P-1218)
A-1435
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