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    Toshiba America Electronic Components TK380A65Y,S4X

    X35 PB-F POWER MOSFET TRANSISTOR
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    DigiKey TK380A65Y,S4X Tube 87 1
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    Mouser Electronics TK380A65Y,S4X 314
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    Toshiba America Electronic Components TK560A65Y,S4X

    MOSFET N-CH 650V 7A TO220SIS
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    Mouser Electronics TK560A65Y,S4X
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    Toshiba America Electronic Components TK290A65Y,S4X

    MOSFET N-CH 650V 11.5A TO220SIS
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    DigiKey TK290A65Y,S4X Tube 1
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    Mouser Electronics TK290A65Y,S4X
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    Toshiba America Electronic Components TK290A65Y

    Power MOSFET N-Channel 650V 11.5A 3-Pin SC-67 Tube - Rail/Tube (Alt: TK290A65Y,S4X)
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    Toshiba America Electronic Components TK380A65Y

    MOSFET N-Channel Enhancement Mode 650V 3-Pin TO-220SIS - Rail/Tube (Alt: TK380A65Y,S4X)
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    A65Y Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The μPD4482161 is a 524,288-word by 16-bit, the μPD4482181 is a 524,288-word by 18-bit, the μPD4482321 is a 262,144-word by 32-bit and the μPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with


    Original
    PD4482161, PD4482161 288-word 16-bit, PD4482181 18-bit, PD4482321 144-word 32-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original
    PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161-Y, 4482181-Y, 4482321-Y, 4482361-Y 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161-Y is a 524,288-word by 16-bit, the µPD4482181-Y is a 524,288-word by 18-bit, the µPD4482321-Y is a


    Original
    PD4482161-Y, 4482181-Y, 4482321-Y, 4482361-Y PD4482161-Y 288-word 16-bit, PD4482181-Y 18-bit, PDF

    Untitled

    Abstract: No abstract text available
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD4482161, 4482181, 4482321, 4482361 8M ビット CMOS シンクロナス高速 SRAM フロー・スルー・オペレーション μPD4482161(524,288 ワードx16 ビット),μPD4482181(524,288 ワード×18 ビット),μPD4482321(262,144


    Original
    PD4482161, PD4482181 PD4482321 PD4482161 PD4482361262 C-A65-A75-A85-C75-C85 C-A65Y-A75Y-A85Y-C75Y-C85Y ns133 ns117 ns100 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original
    PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD44322181, 44322321, 44322361 32M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD44322181 is a 2,097,152-word by 18-bit, the µPD44322321 is a 1,048,576-word by 32-bit and the µPD44322361 is a 1,048,576-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using


    Original
    PD44322181, 32M-BIT PD44322181 152-word 18-bit, PD44322321 576-word 32-bit PD44322361 PDF

    PD4481161

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161 is a 524,288-word by 16-bit, the µPD4481181 is a 524,288-word by 18-bit, the µPD4481321 is a 262,144-word by 32-bit and the µPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with


    Original
    PD4481161, PD4481161 288-word 16-bit, PD4481181 18-bit, PD4481321 144-word 32-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321182, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321182 is a 2,097,152-word by 18-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original
    PD44321182, 32M-BIT PD44321182 152-word 18-bit PD44321362 576-word 36-bit PDF

    PD4481161

    Abstract: m155
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD4481161, 4481181, 4481321, 4481361 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The μPD4481161 is a 524,288-word by 16-bit, the μPD4481181 is a 524,288-word by 18-bit, the μPD4481321 is a 262,144-word by 32-bit and the μPD4481361 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with


    Original
    PD4481161, PD4481161 288-word 16-bit, PD4481181 18-bit, PD4481321 144-word 32-bit m155 PDF

    M15958

    Abstract: MARKING C75
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD44321181, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321181 is a 2,097,152-word by 18-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.


    Original
    PD44321181, 32M-BIT PD44321181 152-word 18-bit PD44321361 576-word 36-bit M15958 MARKING C75 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a 262,144-word by 32-bit and the µPD4482361 is a 262,144-word by 36-bit synchronous static RAM fabricated with


    Original
    PD4482161, PD4482161 288-word 16-bit, PD4482181 18-bit, PD4482321 144-word 32-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4481161-Y, 4481181-Y, 4481321-Y, 4481361-Y 8M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD4481161-Y is a 524,288-word by 16-bit, the µPD4481181-Y is a 524,288-word by 18-bit, the µPD4481321Y is a 262,144-word by 32-bit and the µPD4481361-Y is a 262,144-word by 36-bit ZEROSB static RAM fabricated


    Original
    PD4481161-Y, 4481181-Y, 4481321-Y, 4481361-Y PD4481161-Y 288-word 16-bit, PD4481181-Y 18-bit, PDF

    a65y

    Abstract: PD4481161 LQFP14 448136
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD4481161, 4481181, 4481321, 4481361 8M ビット ZEROSBTM SRAM フロー・スルー・オペレーション μPD4481161(524,288 ワードx16 ビット),μPD4481181(524,288 ワード×18 ビット),μPD4481321(262,144


    Original
    PD4481161, PD4481181 PD4481321 PD4481161 PD4481361262 -A65-A75-A85-A65Y-A75Y-A85Y -C75-C85-C75Y-C85Y C-A65-A75-A85-C75-C85 C-A65Y-A75Y-A85Y-C75Y-C85Y ns133 a65y PD4481161 LQFP14 448136 PDF

    M15502

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µ PD4442161-Y, 4442181-Y, 4442321-Y, 4442361-Y 4M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4442161-Y is a 262,144-word by 16-bit, the µPD4442181-Y is a 262,144-word by 18-bit, the µPD4442321-Y


    Original
    PD4442161-Y, 4442181-Y, 4442321-Y, 4442361-Y PD4442161-Y 144-word 16-bit, PD4442181-Y 18-bit, M15502 PDF