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    A7E SEMICONDUCTOR Search Results

    A7E SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    A7E SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A1013-O

    Abstract: No abstract text available
    Text: O ld Semiconductor MSÌH51V257CL 32,768-Word x 8-Bit CM OS STATIC RAM DESCRIPTION The MSM51V257CL is a 32,768-word by 8-bit CMOS static RAM featuring 2.7 V to 3.6 V power supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely


    OCR Scan     		H51V257CL 768-Word MSM51V257CL 768-word MSM51V257CL, MSM51V257CL A1013-O PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M 8M S12S7CL 32,768-Word x 8 -Bit CMOS STATIC RAM DESCR IPTIO N The MSM51257CL is a 32,768-word by 8-bit CMOS static RAM featuring a 5 V power supply operation and direct TI L input/output compatibility. Since the circuitry is completely static,


    OCR Scan     		S12S7CL 768-Word MSM51257CL 768-word MSM51257CL, MSM512S7CL Cto40 PDF

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M8MS1V2S7CLP 32,768-Word x 8-Bit CM O S STATIC RAM DESCRIPTION The MSM51V257CLP is a 32,768-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V pow er supply operation in the range of-40°C to 85°C and direct LVTTL in p u t/o u tp u t compatibility.


    OCR Scan     		768-Word MSM51V257CLP of-40 MSM51V257CLP, M51V257CLP MSM51V257CLP PDF

    TSOP32-P-820-L

    Abstract: 5 pin A13E
    Text: OKI Semiconductor MSM82V1001LP 131,072-Word x 8-B it CMOS STATIC RAM DESCRIPTION The MSM52V1001LP is a 131,072-word by 8-bit CMOS static RAM featuring 3.0 V to 3.6 V power supply operation in the range of -40 "C to 85,'C and direct LVCMOS input/output compatibility.


    OCR Scan     		MSM82V1001LP 072-Word MSM52V1001LP MSM52V1001 TSOP32-P-820-L 5 pin A13E PDF

    TT104

    Abstract: No abstract text available
    Text: - i I O rdering n u m b e r:EN 3929A SANYO SEMICONDUCTOR CORP S3E D N0.3929A TTTTDTb OQlOlll blS M T S A J LC36257P, PL, PM, PML CMOS LSI SA\YO 256 Kbit 32768 x 8 CMOS Static RAM i PINOUT OVERVIEW LC36257P series devices are silicon-gate, CMOS static RAMs configured as 32 768 x 8 bits. They incorporate


    OCR Scan     		LC36257P, LC36257P LC36257FL/PML-10/12 LC36257PL/PML-10/12 LC36257P/PM-10/12 TT104 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification Octal bus transceiver/register; 3-state FEATURES • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. Inputs accept voltages upto 5.5 V CMOS low power consumption


    OCR Scan     		74LVC646 74LVC646 PDF

    5 pin A13E

    Abstract: A12E 7C166 Cypress 7C166 7c164-15 7C164-12 7C164 a13e
    Text: CY7C164 CY7C166 Ì CYPRESS SEMICONDUCTOR 16Kx 4 Static RAM Features Functional Description • High speed — IS ns The CY7C164and CY7C166 are high-per­ formance CMOS static RAMs organized as 16,384 by 4 bits. Easy memory expan­ sion is provided by an active LOW chip en­


    OCR Scan     		CY7C164 CY7C166 7C166) acY7C164-- CY7C164-- CY7C166-12PC 5 pin A13E A12E 7C166 Cypress 7C166 7c164-15 7C164-12 7C164 a13e PDF

    Untitled

    Abstract: No abstract text available
    Text: P54/74FCT245/A/C P54/74PCT245/A/C P54/74FCT645/A/C (P54/74PCT645/A/C) Octal Bidirectional Transceivers with 3-State Outputs FEATURES ESD protection exceeds 2000V • Function, Pinout, and Drive Compatible with the FCT and F Logic Inputs and Outputs Interface Directly with TTL,


    OCR Scan     		P54/74FCT245/A/C P54/74PCT245/A/C) P54/74FCT645/A/C P54/74PCT645/A/C) MIL-STD-883, 45A/645A 245C/645C AE1912-2 PDF

    CY7C109

    Abstract: 7C109-15
    Text: CY7C109 128K x 8 Static RAM F e a tu r e s F u n c tio n a l D e s c r ip tio n • High speed The CY7C109 is a high-performance CM OS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable C E i , an active H IG H chip enable (CE2),


    OCR Scan     		CY7C109 CY7C109 7C109-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58V256A Series HN58V257A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-357 A Z Rev. 1.0 Apr. 12, 1996 Description The Hitachi HN58V256A and HN58V257A are a electrically erasable and programmable EEPROM 's organized as 32768-w ord x 8-bit, Em ploying advanced MNOS memory technology and CMOS


    OCR Scan     		HN58V256A HN58V257A 32768-word ADE-203-357 32768-w 64-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized


    OCR Scan     		HN58V256A HN58V257A 32-kword HN58V257A) ADE-203-357D 32768-word 64-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized


    OCR Scan     		HN58V256A HN58V257A 32-kword HN58V257A) ADE-203-357D 32768-word 64-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: SN54ACT3641 1 024 x 36 C L O C K E D FI RST-I N, F I R S T - O U T M E M O R Y S G B S 309-A U G U S T 1995 • • F r e e - R u n n i n g C L K A and C L K B Can Be • O u t p u t - R e a d y O R and A l m o s t - E m p t y (AE) Flags Synchronized by CLKB


    OCR Scan     		SN54ACT3641 S962-9S6080INXD PDF

    Untitled

    Abstract: No abstract text available
    Text: C L O C K E D FIRST-1 SN74ACT3631 512 x 36 FIRST- O UT M E M O R Y S C A S 2 4 6 F -A U G U S T 1 9 9 3 - REVISED SEPTEM B ER 1995 F r e e - R u n n i n g C L K A and C L K B Can Be A s y n c h r o n o u s or C o i n c i d e n t O u t p u t - R e a d y and A l m o s t - E m p t y Fl ags


    OCR Scan     		SN74ACT3631 PDF

    ic vertical la 78141

    Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
    Text: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices


    OCR Scan     		CH-8953 ic vertical la 78141 IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


    OCR Scan     		10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan     		thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF

    sun hold RAS 0610

    Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000 PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 PDF