A7W 85
Abstract: diodes a7w a7w diode A7W smd A7W 75
Text: Diodes SMD Type High-Speed Double Diode BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1
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BAV99
OT-23
A7W 85
diodes a7w
a7w diode
A7W smd
A7W 75
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A7W 85
Abstract: BAV99 A7w
Text: Product specification BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05
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BAV99
OT-23
A7W 85
BAV99 A7w
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A6W 37
Abstract: A7W 14 a7w 16 a7w 37 A7W 34 A7W 29 ds1480 a4w 29 DS1868 DS1722
Text: RMP Process Samples 0.6 µm Standard Process Monitor Device s DS21Q43 A3-A Friday, December 28, 2001 Product DS2401 C2 Rev DS12885 B1 DS12885 B1-C DS12887 A2-C DS1425 F1 DS1425 F2 DS1501 A4-Y DS1501 A6-W DS1501 A6-Y DS1511 A6-W DS1511 DS1553 A6-Y A1 DS1543
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DS21Q43
DS2401
DS12885
DS1425
DS1501
DS1511
DS1553
DS1554
DS1556
A6W 37
A7W 14
a7w 16
a7w 37
A7W 34
A7W 29
ds1480
a4w 29
DS1868
DS1722
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a7w 80
Abstract: W2416-70L a7w 16 W2416 W2416-10L W2416K-70 A7W 13 a7w 35 a7w 60 A7W AG
Text: Al/G 1 5 IttZ W2416 IVinbond 2K X 8 CMOS STATIC RAM DESCRIPTION FEATURES The W2416 is a High Speed, Low Power CMOS • Low Power Consumption : Active : 250mW Typ. Static RAM Organized as 2048X8 Bits Standby : 10/zW(Typ.)- L-Version Operates on a Single 5-Volt Supply. It is
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OCR Scan
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W2416
250mW
10/zW
W2416
2048X8
B-1930
a7w 80
W2416-70L
a7w 16
W2416-10L
W2416K-70
A7W 13
a7w 35
a7w 60
A7W AG
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A7W 19
Abstract: A7W 13 A7W 05 a7w 60 A7W 03 a7w 45 a7w 26 a7w 01 a7w 02 a7w 25
Text: E G & G JUDSON S7E D • 303Dh0S 0G001Ô3 T ■ DF Series DF-XXX1 _ Features • • Built-in Interference Planar Diffused Filter • Low Noise • Hermetically Sealed • 106 Blocking • Oxide Passivated Operating Data and Specifications at 23 °C:
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OCR Scan
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303Dh0S
0G001
A7W 19
A7W 13
A7W 05
a7w 60
A7W 03
a7w 45
a7w 26
a7w 01
a7w 02
a7w 25
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a7w 3 PIN
Abstract: a7w 16 A7W 98 A7W 14 A7W 29 A7W 85 A7W 42 a7w 37 A7W 36 A7W 34
Text: EDI816256VA-RP m 256Kx16SRAM x ^ ELECTRONIC DESIGNS, INC. • RuggBdized Plastic ADVANCED 256Kx1B Static RAM CMOS, Monolithic Features The EDI816256VA is a 3.3 volt ruggedized plastic 256Kx16 bit CMOS Static 256Kx16 SRAM that allows the user to capitalize on the
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OCR Scan
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EDI816256VA-RP
256Kx16SRAM
256Kx1B
256Kx16
EDI816256VA
EDI816256VA17M44M
EDI816256VA20M44M
ECH816256VA-RP
a7w 3 PIN
a7w 16
A7W 98
A7W 14
A7W 29
A7W 85
A7W 42
a7w 37
A7W 36
A7W 34
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army
Abstract: GNS 3011 T1IS EDI81256CA
Text: ELECTRONIC DESIGNS INC 30E D m 3230114 00005=11 S • m D i EDI81256CA/LPA/PA H » c t r « ilo O n l g n i In o . i High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The EDI81256CA/LPA/PA is a 262,144 bit high per formance, low power CMOS Static RAM organized as
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OCR Scan
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EDI81256CA/LPA/PA
EDI81256CA/LPA/PA
256Kx1.
MIL-STD-883,
T-46-23-05
army
GNS 3011
T1IS
EDI81256CA
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Untitled
Abstract: No abstract text available
Text: ADE-203-072C Z H M 6 7 W 1 6 6 4 S e r i e s _ J a n .0 3 *1 9 9 4 Target Specification 65536-W ord x 16-Bit High Speed Bi-CMOS Static RAM • DESCRIPTION TheHM67W1664 is asynchronous high speed static RAM organized as 64K word x 1Gbit. These operate 3.3V. It realizes
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OCR Scan
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ADE-203-072C
5536-W
16-Bit
TheHM67W1664
10/12ns
44TbE03
00E57Ã
HM67W1664JP
CP-44D)
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a7w transistor
Abstract: Ba 33 bco A7W 88 transistor a7w A7W 86 a7w 84 a7w 82 a7w 89 a7w 83 transistor a7w 82
Text: PREPARED BY : SPEC No. LD-10407A DATE SHARP APPRO V ED B Y : D A TE F IL E N O . IS S U E : PAGE TFT LIQUID CRYSTAL DISPLAY GROUP S H A R P C O R P O R A T IO N A u g ,1 9 ,1 9 9 8 : 22 p ag e s A P P L IC A B L E G R O U P T F T L iq u id C ry stal D isplay
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LD-10407A
LQ181E1DG01
LD-10407-19
181E1D
a7w transistor
Ba 33 bco
A7W 88
transistor a7w
A7W 86
a7w 84
a7w 82
a7w 89
a7w 83
transistor a7w 82
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Untitled
Abstract: No abstract text available
Text: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I LVTTL, PIPELINED ZBT SRAM d R M h H - .U IV I U MT55L256L18P, MT55L128L32P, MT55L128L36P ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • •
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MT55L256L18P,
MT55L128L32P,
MT55L128L36P
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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OCR Scan
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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OCR Scan
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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PDF
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