smd 3y3
Abstract: SMD K22 smd 1a2 RCA 2A3 JB16 smd 2a3 AL300 AVDD300 DVDD300 6 pin mini din lcd
Text: A B C D E 14.318MHz Opt AVDD300 DVDD300 Y1 10uh(Opt) VDOUT[15:0] 3 U2 2 20 22 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 O1 O2 O3 O4 O5 O6 O7 O8 ROMD0 ROMD1 ROMD2 ROMD3 ROMD4 ROMD5 ROMD6 ROMD7 VDOUT7 VDOUT6 VDOUT5 VDOUT4 VDOUT3 VDOUT2 VDOUT1 VDOUT0
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318MHz
AVDD300
DVDD300
VDOUT15
VDOUT14
VDOUT13
VDOUT12
VDOUT11
VDOUT10
ROMA15
smd 3y3
SMD K22
smd 1a2
RCA 2A3
JB16
smd 2a3
AL300
AVDD300
DVDD300
6 pin mini din lcd
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d-y59a
Abstract: SMC D-B73C D-A59W double diode 5341 dh7a1 zener 48v D-J59 DIODE ZENER X ZENER A34 D-H7A1
Text: Fonction Page 5.3-1 D–C7/C8 D–C73C/C80C D–B5/B6 D–B59W D–A3/A4 D–A3A/A44A D–A3C/A44C D–A7/A8 D–A7H/A80H D–A73C/A80C D–A79W D–A5/A6 D–A59W D–A9/A9V D–9/9A D–E7A/E80A D–Z7/Z8 D–H7 D–H7C D–H7BAL D–H7F D–H7W
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C73C/C80C
A3A/A44A
A3C/A44C
A7H/A80H
A73C/A80C
E7A/E80A
G5W/K59W
G39/K39
G39A/K39A
F5W/J59W
d-y59a
SMC D-B73C
D-A59W
double diode 5341
dh7a1
zener 48v
D-J59
DIODE ZENER X
ZENER A34
D-H7A1
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conn 20X2
Abstract: 245-DIR ISA-12V ISP1181 LA18 LA20 q1 npn3904 npn3904 header 20X2 HEADER 6X2
Text: 1 2 3 4 5 6 ISA-5V CONN2 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 ISA-D7 ISA-D6 ISA-D5 ISA-D4 ISA-D3 ISA-D2 ISA-D1 ISA-D0 ISA-IORDY# ISA-AEN D ISA-A16 ISA-A15 ISA-A14 ISA-A13 ISA-A12
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ISA-A16
ISA-A15
ISA-A14
ISA-A13
ISA-A12
ISA-A11
ISA-A10
ISP1181-CLKOUT
10uF/16V
BLM21A10
conn 20X2
245-DIR
ISA-12V
ISP1181
LA18
LA20
q1 npn3904
npn3904
header 20X2
HEADER 6X2
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Untitled
Abstract: No abstract text available
Text: 9 Transistor I/O Link Module B7A-P P10 Save Space and Reduce Wiring Back to PLC Rack for 10 I/O Points 1 Transmit 10 input signals over just 2 wires 3 wires if only one terminal has a power supply 1 Connect 3-wire NPN output sensors to B7A screw terminal models (two-wire
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B7A-P10
OUT00
OUT01
OUT02
OUT03
OUT04
OUT05
OUT06
OUT07
OUT08
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Untitled
Abstract: No abstract text available
Text: NN51V18165B series EDO Hyper Page Mode _ _ _ _ CMOS 1M x 16bit Dynamic RAM NPNA' DESCRIPTION The NN51V18165B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18165B series is fabricated with advanced CMOS technology and designed with innovative
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NN51V18165B
16bit
NN51V18165BL
1005bSD
NN51V181
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NN5118160A
Abstract: NN5118160B WA137
Text: NN5118160A / NN5118160B series Fast Page Mode CMOS 1Mx 16bit Dynamic RAM NPN a DESCRIPTION The NN5118160A / NN5118160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN5118160A / B series is fabricated with advanced CMOS technology and designed with
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NN5118160A
NN5118160B
16bit
NN5118160A/NNS118160B
WA137
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nn5118165
Abstract: NN5118165A
Text: N E N D C M 5 1 O 1 8 1 H O S 6 y p 5 A e r P x 1 1 M / N a 6 N g b e i t 5 1 M D 1 8 o y n 1 6 d e a m 5 i c B s R e A r i e NPN>a< s M DESCRIPTION T h e NN5118165A / NN5118165B series is a high performance C M O S Dynamic Random Access Memory organized as
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NN5118165A
NN5118165B
N5118165B
N5118165A
128ms
NN51181
010DM
nn5118165
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Untitled
Abstract: No abstract text available
Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC
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LS310
LS311
LS312
LS313
250MHz
250mW
500mW
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PDF
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Untitled
Abstract: No abstract text available
Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE≥200@10µA-1mA TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC
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LS310
LS311
LS312
LS313
250MHz
250mW
500mW
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Untitled
Abstract: No abstract text available
Text: NN514170 series Fast Page Mode CMOS 256K X 16bit Dynamic RAM NPN>Â< DESCRIPTION The NN514170 series is a high performance CMOS Dynamic Random Access Memory organized as 262,144 words by 16 bits. The NN514170 series is fabricated with advanced CMOS technology and designed
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NN514170
16bit
NN514170L
NN514170XXI
128ms
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Untitled
Abstract: No abstract text available
Text: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative
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NN51V18160B
16bit
NN51V18160BL
0QQ11CH
NN51V181
128ms
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PDF
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NN514400
Abstract: No abstract text available
Text: NN514400/ NN514400A / NN514400B series Fast Page Mode CMOS 1M x 4bit Dynamic RAM NPN a DESCRIPTION The NN514400/A/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN514400/A/B series is fabricated with advanced CMOS technology and de
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NN514400/
NN514400A
NN514400B
NN514400/A/B
514400L/AI7BL
NN514400
/NN514400Bseries
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PDF
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Untitled
Abstract: No abstract text available
Text: NN514800 seríes Fast Page Mode CMOS 512K X 8bit Dynamic RAM NPN>a< Preliminary Specification DESCRIPTION The NN514800 series is a high performance CMOS Dynamic Random Access Memory organized as 524,288 words by 8 bits. The NN514800 series is fabricated with advanced CMOS technology and designed
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NN514800
NN514800L
S12KX
NN514800XJ
128ms
512Kx8
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Untitled
Abstract: No abstract text available
Text: NN51V4400B series Fast Page Mode CMOS 1M x4b it Dynamic RAM NPN>a Preliminary Specification 1 r DESCRIPTION The NN51V4400B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN51V4400B series is fabricated with advanced CMOS technology and de
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NN51V4400B
NN51V4400BL
NN51V14400B
V4400BXX
128ms
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Untitled
Abstract: No abstract text available
Text: NN514100A series Fast Page Mode CMOS 4M x 1bit Dynamic RAM NPN a DESCRIPTION The NN514100A series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100A series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN514100A
NN514100AL
NN5141
128ms
NN514100A
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UM66
Abstract: 1355052 UM3750 ultrasonic piezo speaker infrared security alarm K3G097-AK34-65 melody generator UM66 melody generator UM66T Series UM66T
Text: UNITE» MICROELECTRONICS U M 6 6 T S e r íe s 3DE D 'iBESflSE 00DD2S1 3 Simple Melody Generator Features Pin Configuration • 62-note ROM memory 1 ■ 1.3V to 3.3V operating voltage and low power con UM66 T xxx 85xx sumption ■ Dynamic speaker can be driven w ith an external NPN
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UM66T
62-note
UM37SO
UM66
1355052
UM3750
ultrasonic piezo speaker
infrared security alarm
K3G097-AK34-65
melody generator
UM66 melody generator
UM66T Series
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A984
Abstract: c2274 C2274 E transistor c2274 A984k C2274K 2SC2274 2SA984 VCEO50 transistor 2sc2274
Text: 2SA984, 984K 2SC2274, 2274K 465F f “ ill PNP/npn E p ita x ia l Planar S ilic o n T ransistors 2 0 03 A Low Frequency Power Amp Applications Features . High breakdown v o l t age V c e o = 5 0 / 8 0 V . . High current (Ic=500mA). . Lo w saturation voltage.
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2SA984,
2SC2274,
2274K
50/80V)
500mA)
2SA984
C2274
A984K
C2274K
A984
c2274
C2274 E
transistor c2274
C2274K
2SC2274
VCEO50
transistor 2sc2274
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PDF
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Untitled
Abstract: No abstract text available
Text: NN514100 series Fast Page Mode CMOS 4 M x 1bit Dynamic RAM NPN a< DESCRIPTION The NN514100 series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100 series is fabricated with advanced CMOS technology and designed
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NN514100
NN514100L
NN514100XX
128ms
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PDF
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nn514405
Abstract: No abstract text available
Text: NN514405 / NN514405B series EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN514405/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405/B series is fabricated with advanced CMOS technology and de
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NN514405
NN514405B
NN514405/B
NN514405L/BL
NN514405/
128ms
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PDF
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BF259
Abstract: bf 233 BF257 BF 235 BF258 BF258-BF259 bf 258 bf 236 A1233
Text: Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Video-Endstufen in Schwarz-Weiß- und Farb-FS-Empfängern. Schaltungen mit hoher Betriebsspannung Applications: Video power stages in black and white and colour TV receivers.
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Untitled
Abstract: No abstract text available
Text: NN5116165A/ NN5118165A series EDO Hyper Page Mode CMOS 1Mx 16bit Dynamic RAM NPN)a( Preliminary Specification d e s c rip tio n The NN5116165A/18165A series is a high performance CMOS Dynamic Random Access Memory orga nized as 1,048,576 words by 16 bits. The NN5116165A/18165A series is fabricated with advanced CMOS
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NN5116165A/
NN5118165A
16bit
NN5116165A/18165A
NN5116
65AXX
128ms
NN51181
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2SD427
Abstract: Transistor 2SD427 2SD427R 2sd427 transistor q406 250427 2sd427-r
Text: 2 s d 427 SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o m tn tm m o Power A m p l i f i e r A p p l i c a t i o n s Unit in m m *2 5 .0 MAX, • ^ i' 0 * ia, • &i E t t o : P 0 = sow : v 0EQ = 2 SB 5 5 7 5 0 J K 120V i i t t H i - F i Hr — i * 4 * 7 's T'tti £ S K f t j § T-J-0
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2sd427
2SD427
2SD427â
Transistor 2SD427
2SD427R
2sd427 transistor
q406
250427
2sd427-r
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PDF
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2N3506
Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)
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bv2N850WWD
2N3506JTX,
2N3507JTX,
TM05AD
2NW06
2NW07
300Vdc)
2N3506
1PHW41011-2
2NS50MWD
2N3506
2N3507
2N3506JTX
2N3506 MOTOROLA
2N3507JTX
15-ADO
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PDF
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2SC3293
Abstract: SC46 m 5768 2 diode ZENER A8
Text: Ordering number: EN 13330 N0.1333C 2SC3293 NPN Planar Silicon Darlington Transistor SANYO i Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . Features • High DC current gain.
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1333C
l333C
2SC3293
SC46
m 5768 2
diode ZENER A8
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