stk*402-270
Abstract: stk408 STK402-270 Sanyo audio amplifier STK402-200 STK402-240 STK408-000 series TM-35 stk402-000 stk402 110
Text: Ordering number : ENN7072 Thick-Film Hybrid IC STK402-270 Three-Channel Class AB Audio Power Amplifier IC 40 W + 40 W + 40 W Overview Package Dimensions The STK402-200 series products are audio power amplifier hybrid ICs that consist of optimally-designed
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ENN7072
STK402-270
STK402-200
STK408-000
4191-SIP19
STK402-270]
stk*402-270
stk408
STK402-270
Sanyo audio amplifier
STK402-240
STK408-000 series
TM-35
stk402-000
stk402 110
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transistor C3
Abstract: EC 401 TRANSISTOR
Text: BLF6G20-40 Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G20-40
BLF6G20-40
transistor C3
EC 401 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA672: plastic thermal enhanced ball grid array package; 672 balls; body 40 x 40 x 1.2 mm; heatsink B D SOT835-1 A ball A1 index area A A2 A1 E A4 detail X C e1 f1 e AK AH AF AD AB Y V T P M K H F D B AJ AG AE e AC heatsink AA W U e2 R N
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HBGA672:
OT835-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA1312: plastic thermal enhanced ball grid array package; 1312 balls; body 40 x 40 x 1.65 mm; heatsink B D SOT624-1 A ball A1 index area A E A2 A1 detail X C e1 AV AT AP AM AK AH AF AD AB Y V T P M K H F D B ∅w M C AW AU AR AN AL AJ AG
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HBGA1312:
OT624-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA600: plastic thermal enhanced ball grid array package; 600 balls; body 40 x 40 x 0.9 mm; heatsink B D SOT605-1 A ball A1 index area A A2 A1 E A4 detail X C e1 f1 e AK AH AF AD AB Y F B AJ AG AE e AC heatsink AA e2 R M D AL U T P H N L J
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HBGA600:
OT605-1
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA1092: plastic thermal enhanced ball grid array package; 1092 balls; body 40 x 40 x 1.75 mm; heatsink SOT948-1 B D D1 A ball A1 index area E1 j E A A2 A1 detail X e1 e AV AT AP AM AK AH AF AD AB Y V T P M K H F D B ∅v ∅w b 1/2 e AU AR
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HBGA1092:
OT948-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA760: plastic thermal enhanced ball grid array package; 760 balls; body 40 x 40 x 1.75 mm; heatsink D D1 SOT846-1 B A ball A1 index area j E1 E A A2 A1 detail X C e1 e AK AH AF AD AB Y V T P M K H F D B ∅v ∅w b 1/2 e M M AJ AG e AE AC
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HBGA760:
OT846-1
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA624: plastic thermal enhanced ball grid array package; 624 balls; body 40 x 40 x 1.75 mm; heatsink D D1 SOT860-1 B A ball A1 index area j E1 E A A2 A1 detail X C e1 e AK AH AF AD AB Y V T P M K H F D B ∅v ∅w b 1/2 e M M AJ AG e AE AC
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HBGA624:
OT860-1
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA596: plastic thermal enhanced ball grid array package; 596 balls; body 40 x 40 x 1.75 mm; heatsink SOT635-1 B D A D1 ball A1 index area j A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AH AF AD AB Y V T P M AJ AG AC
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HBGA596:
OT635-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline HBGA564: plastic thermal enhanced ball grid array package; 564 balls; body 40 x 40 x 1.75 mm; heatsink SOT799-1 B D A D1 ball A1 index area A j A2 E1 E A1 detail X C e1 e 1/2 e y1 C ∅v M C A B b y ∅w M C AK AH AF AD AB Y V T P M K H F D
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HBGA564:
OT799-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline BGA956: plastic ball grid array package; 956 balls; body 40 x 40 x 1.75 mm SOT651-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AV AU AT AR AP AN AM AL AK AJ AH AG AF AE AD AC AB AA Y W V U
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BGA956:
OT651-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline BGA564: plastic ball grid array package; 564 balls; body 40 x 40 x 1.75 mm SOT947-1 B D D1 A ball A1 index area E1 E A A1 A2 detail X e1 e ∅v ∅w b 1/2 e M M C C A B C y y1 C AK AJ AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E
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BGA564:
OT947-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline BGA760: plastic ball grid array package; 760 balls; body 40 x 40 x 1.75 mm SOT652-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AJ AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E
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BGA760:
OT652-1
MS-034
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Untitled
Abstract: No abstract text available
Text: Package outline BGA656: plastic ball grid array package; 656 balls; body 40 x 40 x 1.75 mm SOT588-1 B D A D1 ball A1 index area A E1 E A2 A1 detail X C e1 b 1/2 e e y y1 C ∅v M C A B ∅w M C AK AJ AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E
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BGA656:
OT588-1
MS-034
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J122 SMD TRANSISTOR
Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22L-40BN
J122 SMD TRANSISTOR
BLC6G22L-40BN/2
800B
BLF6G22L-40BN
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J122 SMD TRANSISTOR
Abstract: No abstract text available
Text: BLF6G22LS-40BN Power LDMOS transistor Rev. 1 — 28 June 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit.
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BLF6G22LS-40BN
J122 SMD TRANSISTOR
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SO42
Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002
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PowerSO-10RF
PD54003
PD54008
PD55003
PD55008
PD55015
PD55025S
PD57002
PD57006
PD57018
SO42
STM 160-30
"class AB Linear" hf
PD55003 equivalent
SD57045
linear amplifier 470-860
LT5232
VHF lna 30 to
SD4100
SD2932 linear amplifier
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u930
Abstract: No abstract text available
Text: Keil Software, Inc. Application Note Using MON251 with the Intel Project Builder 251SB Target Board APNT_102 OVERVIEW This application note provides the information necessary for you to install the Keil 251 monitor program onto an 87C251SB16 microcontroller and operate that monitor in the Intel Project Builder
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MON251
251SB
87C251SB16
23-Feb-97
D-85630
u930
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500 watt power UPS circuit diagram
Abstract: 600 watts UPS circuit diagram 450 watt circuit diagram
Text: PM450CLA060 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod L-Series Three Phase IGBT Inverter 450 Amperes/600 Volts A Q N J L T 11 10 U L M 9 8 P V W 7 S AF J AD AC B D L M 12 K (8 PLACES) AB E F C AB X Y
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PM450CLA060
Amperes/600
20kHz.
500 watt power UPS circuit diagram
600 watts UPS circuit diagram
450 watt circuit diagram
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740MIL
Abstract: No abstract text available
Text: DS 1258Y/A B DALLAS SEMICONDUCTOR FEATURES DS1258Y/AB 128K x 16 Nonvolatile SRAM PIN ASSIGNMENT • 10 year m inimum data retention in the absence of external power CEU 40 39 3 38 4 37 5 36 6 35 7 34 8 33 9 32 DQ8 1 10 31 1 A9 DQ14 DQ13 DQ12 • Unlimited write cycles
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1258Y/A
DS1258Y)
DS1258AB)
DS1258Y/AB
40-pin
740MIL
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Untitled
Abstract: No abstract text available
Text: DS 1658Y/A B DALLAS SEMICONDUCTOR DS1658Y/AB Partitionable 128Kx 16 NV SRAM FEATURES PIN ASSIGNMENT • 10 year m inimum data retention in the absence of external power 1 1 40 | VGG CEL 1 2 39 1 WE D Q 15 1 3 38 1 A16 D Q 14 1 4 37 • A15 D Q 13 1 5 36 1
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OCR Scan
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1658Y/A
DS1658Y/AB
128Kx
40-pin
658Y/AB
DS1658Y/AB
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1258Y/AB PRODUCT PREVIEW D A L L A S D S 1 2 5 8 Y /A B 128K x 16 Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 year minimum data retention in the absence of external power 1 1 CEL 1 2 40 1 Vcc 39 1 WE DQ15 1 3 DQ14 1 4 38 1 A16
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DS1258Y/AB
40-pin
2bl4130
001353b
DS1258Y/AB
40-PIN
2bl413D
QD13537
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intel 8257
Abstract: D8257 C8257 P8257 Am8257/9557
Text: Am8257/9557 Program m able D M A C ontroller DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Direct plug-in replacement for Intel 8257 The Am8257/9557 is a four channel Direct Memory Access con troller which permits the high speed transfer of data directly
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Am8257/9557
MIL-STD-883
Am8257
intel 8257
D8257
C8257
P8257
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d8257
Abstract: 9080A Intel 8257 AM9557DM C8257 THOMPSON CSF AM8238 block and pin diagram of 8257 AM8224
Text: 0 ^1 Am8257/9557 \\p’ Programmable DMA Controller Advanced Micro Devices Advanced MOS/LSI xT 001301 '•\ N f t rrt ft f l3° 1 _ j i \ J ^ / Of b DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • D irect plug-in replacement fo r Intel 8257
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fl30l
Am8257/9557
MIL-STD-883
40-Pin
d8257
9080A
Intel 8257
AM9557DM
C8257
THOMPSON CSF
AM8238
block and pin diagram of 8257
AM8224
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