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    AB22B Search Results

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    AB22B Price and Stock

    TE Connectivity W51-AB22B2-10

    W51-AB22B2-10=CKTBKR,THERM,ROCK,
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    DigiKey W51-AB22B2-10 Tray 200
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    Avnet Americas W51-AB22B2-10 Tray 16 Weeks, 3 Days 200
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    RS W51-AB22B2-10 Bulk 200
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    Master Electronics W51-AB22B2-10
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    • 100 $4.38
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    Carling Technologies MT2-P-D4-650-A-B22-B-T

    CIRCUIT BREAKER
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    DigiKey MT2-P-D4-650-A-B22-B-T Bulk 2
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    Mouser Electronics MT2-P-D4-650-A-B22-B-T
    • 1 $157.26
    • 10 $140.71
    • 100 $115.88
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    Master Electronics MT2-P-D4-650-A-B22-B-T
    • 1 $132.21
    • 10 $70.71
    • 100 $52.14
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    Sager MT2-P-D4-650-A-B22-B-T 1
    • 1 $144.31
    • 10 $133.06
    • 100 $60.43
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    OTTO Engineering Inc J2-S2AB22BBA

    Speakers & Transducers FullBridge +/- 10.0 FlatButton WireLeads
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    Mouser Electronics J2-S2AB22BBA
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    Sager J2-S2AB22BBA 1
    • 1 $1558.33
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    Amphenol Corporation NTHCAB22B1001F0

    Automotive Connectors NTHCAB22B1001F0
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    Mouser Electronics NTHCAB22B1001F0
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    Amphenol Corporation NTHCAB22B1002F0

    Automotive Connectors NTHCAB22B1002F0
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    Mouser Electronics NTHCAB22B1002F0
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    AB22B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 10n60

    Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
    Text: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)


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    PDF 4bab22b IXTH10N60, IXTM10N60 55Q/0 IXTH10N60 O-247 300ns, MOSFET 10n60 10N60A ir 10n60 10N60 10N60R 3N90R

    78737

    Abstract: No abstract text available
    Text: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss


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    PDF IXTK21N100 IXTN21N100 O-264 OT-227 E153432 ab22b 00D4D0S 78737

    TL 650 ht

    Abstract: mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100
    Text: I X Y S CÔRP lûE D • 4bSL22b Q00Q573 1 ■ f JiPerFETs_ The HIPerFET family of Power MOSFETs Is designed to provide superior dv/dt performance while eliminating th e need for discrete, fast recoveiy “free wheeling" rccllfiers in a broad range of power switching


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    PDF 4bfid22b O-204 O-284 TL 650 ht mbab diode sy 166 ditti IXFH26N50 MKL series IXFN15N100 IXFMS0N20 IXFH12N100 IXFH5N100