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    ARMv7-M Architecture Reference Manual

    Abstract: ARMv5 ARM1136J-S ARM1156T2F-S ARM926EJ-S ARM946E-S how to reverse float variable in java 0043C
    Text: Run-time ABI for the ARM architecture Run-time ABI for the ARM Architecture Document number: ARM IHI 0043C, current through ABI release 2.08 Date of Issue: 19th October 2009 Abstract This document defines a run-time helper-function ABI for programs written in ARM-Thumb assembly language, C,


    Original     		PDF 0043C, 0043C ARMv7-M Architecture Reference Manual ARMv5 ARM1136J-S ARM1156T2F-S ARM926EJ-S ARM946E-S how to reverse float variable in java 0043C

    ULEB128

    Abstract: RPB-6
    Text: Itanium Software Conventions and Runtime Architecture Guide May 2001 Document Number: 245358-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no


    Original     		PDF ULEB128) ULEB128 RPB-6

    M12L128168A

    Abstract: M12S128168A M12S128168A-10TG
    Text: ESMT M12S128168A Revision History Revision 1.0 Nov. 09, 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date: Nov. 2006 Revision: 1.0 1/44 ESMT M12S128168A 2M x 16 Bit x 4 Banks SDRAM Synchronous DRAM FEATURES ORDERING INFORMATION y


    Original     		PDF M12S128168A 400mil M12L128168A M12S128168A M12S128168A-10TG

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64322A Revision History Revision 1.0 Jan. 19, 2007 -Original Revision 1.1 (Mar. 03, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Mar. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min), and tSHZ(max)


    Original     		PDF M52D64322A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007


    Original     		PDF M52D64164A

    M12L2561616A-7TI

    Abstract: No abstract text available
    Text: ESMT M12L2561616A Operation Temperature Condition -40~85°C 4M x 16 Bit x 4 Banks SDRAM Synchronous DRAM FEATURES y y y y y y y y y ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L2561616A M12L2561616A-6TIG M12L2561616A-6BIG M12L2561616A-7TIG M12L2561616A-7BIG 166MHz 143MHz M12L2561616A-7TI

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L128168A 2N Operation Temperature Condition -40°C~85°C SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES „ „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L128168A M12L128168A-5TIG2N 200MHz M12L1tain

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L2561616A 2K Operation Temperature Condition -40 C~85 C SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES „ „ „ „ „ „ „ „ „ ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation


    Original     		PDF M12L2561616A M12L2561616A-5TIG2K 200MHz M12L2561616ain

    M52S128168A

    Abstract: M52S128168A-10TG
    Text: ESMT M52S128168A Revision History Revision 1.0 May. 29, 2007 -Original Revision 1.1 (Oct. 08, 2007) -Add Speed -7 spec. -Modify Icc spec Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007 Revision: 1.1 1/47 ESMT M52S128168A Mobile SDRAM


    Original     		PDF M52S128168A M52S128168A M52S128168A-10TG

    1M x 16-Bit x 4 Banks synchronous DRAM

    Abstract: No abstract text available
    Text: ESMT M52S64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		PDF M52S64164A M52S64164A-7 133MHz 1M x 16-Bit x 4 Banks synchronous DRAM

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)


    Original     		PDF M52L64164A M52L64164A-6TG 166MHz

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D2561616A 2F Mobile SDRAM 4M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES           1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M52D2561616A M52D2561616A-5BG2F M52D2561616A-6BG2F M52D2561616A-7BG2F 200MHz 166MHz 143MHz

    Untitled

    Abstract: No abstract text available
    Text: ESMT M12L128168A 2L Operation Temperature Condition -40°C~85°C SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L128168A M12L128168A-5TIG2L M12L128168A-5BIG2L M12L128168A-6TIG2L M12L128168A-6BIG2L M12L128168A-7TIG2L M12L128168A-7BIG2L 200MHz 166MHz

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Jan. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min) and tSHZ(max)


    Original     		PDF M52D64164A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D64164A Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3


    Original     		PDF M52D64164A M52D64164A-10TG 100MHz

    Untitled

    Abstract: No abstract text available
    Text: ESM T M52D128168A 2E Mobile SDRAM 2M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES „ „ „ „ „ „ „ „ „ „ 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M52D128168A

    Untitled

    Abstract: No abstract text available
    Text: ESM T M12L128168A 2L Operation Temperature Condition -40 C~85 C SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES „ „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L128168A M12L128168A-5TIG2L 200MHz M12L1281tain

    M12L2561616A-5TG2S

    Abstract: No abstract text available
    Text: ESMT M12L2561616A 2S SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 )


    Original     		PDF M12L2561616A M12L2561616A-5TG2S 200MHz M12L2561616A-6TG2S 166MHz M12L2561616Aain M12L2561616A-5TG2S

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D128168A 2E Mobile SDRAM 2M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION FEATURES y y y y y y y y y y 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3)


    Original     		PDF M52D128168A M52D128168A-5BG2E M52D128168A-6BG2E M52D128168A-7BG2E 200MHz 166MHz 143MHz

    SDRAM

    Abstract: M12L128168A-5TG M12L128168A6TG2N m12l128168a-7tg
    Text: ESMT SDRAM M12L128168A 2N 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page )


    Original     		PDF M12L128168A M12L128168A-5TG2N M12L128168A-5BG2N M12L128168A-6TG2N M12L128168A-6BG2N M12L128168A-7TG2N M12L128168A-7BG2N 200MHz 166MHz 143MHz SDRAM M12L128168A-5TG M12L128168A6TG2N m12l128168a-7tg

    M12L2561616A-7TG2K

    Abstract: No abstract text available
    Text: ESMT M12L2561616A 2K SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y ORDERING INFORMATION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 )


    Original     		PDF M12L2561616A M12L2561616A-5TG2K M12L2561616A-5BG2K M12L2561616A-6TG2K M12L2561616A-6BG2K M12L2561616A-7TG2K M12L2561616A-7BG2K 200MHz 166MHz

    elite ups

    Abstract: No abstract text available
    Text: ESMT M52L64164A Operation Temperature Condition -40~85°C Mobile SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M52L64164A M52L64164n elite ups

    SDRAM

    Abstract: M12L2561616A-5T 54-lead M12L2561616A
    Text: ESMT M12L2561616A 2A Automotive Grade SDRAM 4M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs


    Original     		PDF M12L2561616A M12L2561616A SDRAM M12L2561616A-5T 54-lead

    Untitled

    Abstract: No abstract text available
    Text: ESM T SDRAM M12L128168A 2L 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES „ „ „ „ „ „ „ „ „ JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 )


    Original     		PDF M12L128168A M12L128168A-5TG2L 200MHz M12L128168A-5BG2L