Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Surface Mount Single Phase Glass Passivated Bridge Rectifiers ABS10 ABS 0.010 0.25 ● Reliable low cost construction utilizing 0.136(3.45) 0.028(0.7) 0.028(0.7) 0.128(3.25) 0.024(0.6) 0.012(0.3) 0~10 O 0.006(0.15) 0.002(0.05) 0.236(6.0) ● Ideal for printed circuit board
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ABS10
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TOSHIBA IGBT DATA BOOK
Abstract: 1MBI300L120 1MBI300L-120 motorola diodes
Text: Electronic Component Specsheet Page 1 of 1 Part Number = 1MBI300L120 Manufacturer Name = Various Description = Independent IGBT Power Module - fsw=10-20kHz Circuits Per Package = 1 V BR CES (V) = 1.2k I(C) Abs.(A) Collector Current = 300 Absolute Max. Power Diss. (W) = 2.0k
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1MBI300L120
10-20kHz
TOSHIBA IGBT DATA BOOK
1MBI300L120
1MBI300L-120
motorola diodes
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SUD50N06-09L-E3
Abstract: SUD50N06-09L
Text: SUD50N06-09L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 D Automotive − ABS − Motor Drives
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SUD50N06-09L
O-252
SUD50N06-09L--E3
S-40272--Rev.
23-Feb-04
SUD50N06-09L-E3
SUD50N06-09L
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SUD50N06-09L-E3
Abstract: 72004 SUD50N06-09L
Text: SUD50N06-09L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 D Automotive − ABS − Motor Drives
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SUD50N06-09L
O-252
SUD50N06-09L--E3
S-50282--Rev.
21-Feb-05
SUD50N06-09L-E3
72004
SUD50N06-09L
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HVR-1X 7 diode
Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Text: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10
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SFPM-54
SFPM-62
SFPM-64
SFPM-52
AM01Z
AM01A
EM01Z
EM01A
HVR-1X 7 diode
FMS-3FU
HVR-1X 6 diode
MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR
FMPG5F
rk36 diode
rk14 diode
HVR-1X 7
diode RU 3AM
HVR-1X diode
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3652HV
Abstract: LiFePO4 charger charger ic lifepo4 4 cell in series lead acid 16v battery charger LT3652HVIMSE diagram LEAD ACID CHARGER 8 amp 12V SOLAR Lead Acid 6v Charger replacement Bd 136
Text: LT3652HV Power Tracking 2A Battery Charger FEATURES DESCRIPTION Input Supply Voltage Regulation Loop for Peak Power Tracking in MPPT Solar Applications n Wide Input Voltage Range: 4.95V to 34V (40V Abs Max) n Programmable Charge Rate Up to 2A n User Selectable Termination: C/10 or On-Board
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LT3652HV
3652HV
LTC4002
LTC4006
LTC4007
LTC4008
LTC4009/LTC4009-1/
LTC4009-2
LTC4012/LTC4012-1/
LTC4012-2/
LiFePO4 charger
charger ic lifepo4 4 cell in series
lead acid 16v battery charger
LT3652HVIMSE
diagram LEAD ACID CHARGER 8 amp 12V SOLAR
Lead Acid 6v Charger
replacement Bd 136
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SUP57N20-33
Abstract: No abstract text available
Text: SUP57N20-33 New Product Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 200 0.033 @ VGS = 10 V 57 APPLICATIONS D Automotive - 42-V EPS and ABS
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SUP57N20-33
O-220AB
08-Apr-05
SUP57N20-33
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Untitled
Abstract: No abstract text available
Text: SUM110N08-07 New Product Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 85 APPLICATIONS D Automotive – Boardnet 42-V EPS and ABS
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SUM110N08-07
O-263
S-20175â
18-Mar-02
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S2186
Abstract: SUM110N08-07 S-21863 A110D
Text: SUM110N08-07 New Product Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 110 APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS
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SUM110N08-07
O-263
S-21863--Rev.
21-Oct-02
S2186
SUM110N08-07
S-21863
A110D
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SUD50N06-16
Abstract: No abstract text available
Text: SUD50N06-16 Vishay Siliconix New Product N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET ID (A)c APPLICATIONS D TO-252 Drain Connected to Tab G D D Automotive - ABS - EPS - Motor Drives
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SUD50N06-16
O-252
S-31921--Rev.
15-Sep-03
SUD50N06-16
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MOSFET driver 175C
Abstract: SUM110N04-04 S-41166
Text: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers
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SUM110N04-04
O-263
SUM110N04-04--E3
08-Apr-05
MOSFET driver 175C
SUM110N04-04
S-41166
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S-41166
Abstract: SUM110N04-04 SUM110N04-04-E3
Text: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers
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SUM110N04-04
O-263
SUM110N04-04--E3
S-41166--Rev.
14-Jun-04
S-41166
SUM110N04-04
SUM110N04-04-E3
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QB-14-HAD
Abstract: QB-16-HAD QB-21-HA-1 QB-25-HAD QB-29-HAD QB-29-HAD-2 QB-36-HAD-2 QB-37-AD-1 QB-38-HAD QN-24-HAD-2
Text: SPST DIODE SWITCH SERIES QB, QN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: 50 Ohms. RF Power: +20 dBm operational. DC Requirements: Switches without drivers require +50 mA maximum for the “off” condition. For the “on” condition all models
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QB-14-HAD
Abstract: QB-16-HAD QB-21-HA-1 QB-25-HAD QB-29-HAD QB-29-HAD-2 QB-36-HAD-2 QB-37-AD-1 QB-38-HAD QN-24-HAD-2
Text: SPST DIODE SWITCH SERIES QB, QN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: 50 Ohms. RF Power: +20 dBm operational. DC Requirements: Switches without drivers require +50 mA maximum for the “off” condition. For the “on” condition all models
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XB-11-HAD-1
Abstract: XB-14-AD XB-15-HAD XB-17-HAD XB-20-HAD-1 XB-21-AD-1 XB-35-HAD-1 XB-37-HAD-2 XL-22D-1 XN-12
Text: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, XN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,
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Informati80
XN-77D
XN-86-HAD
XB-98-HAD-1
XB-11-HAD-1
XB-14-AD
XB-15-HAD
XB-17-HAD
XB-20-HAD-1
XB-21-AD-1
XB-35-HAD-1
XB-37-HAD-2
XL-22D-1
XN-12
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Untitled
Abstract: No abstract text available
Text: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, XN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,
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XB-11-HAD-1
Abstract: XB-14-AD XB-15-HAD XB-17-HAD XB-20-HAD-1 XB-21-AD-1 XB-35-HAD-1 XB-37-HAD-2 XL-22D-1 XN-12
Text: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, XN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,
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Informati80
XN-77D
XN-86-HAD
XB-98-HAD-1
XB-11-HAD-1
XB-14-AD
XB-15-HAD
XB-17-HAD
XB-20-HAD-1
XB-21-AD-1
XB-35-HAD-1
XB-37-HAD-2
XL-22D-1
XN-12
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SPDT SWITCH 6 GHZ 1 WATT
Abstract: ABS 10 diode XB-11-HAD-1 XB-14-AD XB-15-HAD XB-17-HAD XB-20-HAD-1 XB-21-AD-1 XB-35-HAD-1 XB-37-HAD-2
Text: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, XN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,
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XN-77D
XN-86-HAD
XB-98-HAD-1
SPDT SWITCH 6 GHZ 1 WATT
ABS 10 diode
XB-11-HAD-1
XB-14-AD
XB-15-HAD
XB-17-HAD
XB-20-HAD-1
XB-21-AD-1
XB-35-HAD-1
XB-37-HAD-2
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ABS 10 diode
Abstract: ITT CANNON MCE RD1100 TB-412-HASD TB-415-HARD TB-416-RD TB-417-ASD TB-422-HASD-1 TB-426-HARD TB-434-HASD
Text: NARROWBAND SP4T DIODE SWITCH SERIES TN/TB/TL-400 REFLECTIVE AND ABSORPTIVE 0.1–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Connectors: 0.1 to 18.0 GHz. 50 OHMS. +20 dBm operational.
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TN/TB/TL-400
MDB19REFL
TB-468-SD
TB-479-HASD-2
TN-474-ASD-1
ABS 10 diode
ITT CANNON MCE
RD1100
TB-412-HASD
TB-415-HARD
TB-416-RD
TB-417-ASD
TB-422-HASD-1
TB-426-HARD
TB-434-HASD
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VB-17-HASD
Abstract: VB-17-SD VB-35-HASD VB-37-HASD-1 VB-48-HASD VB-57-HASD VB-73-HASD-2 VB-75-HASD VB-84-HASD-2 VB-95-HASD
Text: SP3T DIODE SWITCH SERIES VB, VN REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL INFORMATION Series VB, VN, switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent
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VB-57-HASD
VB-73-HASD-2
VB-75-HASD
VB-84-HASD-2
VB-95-HASD
VN-77-ASD
VB-17-HASD
VB-17-SD
VB-35-HASD
VB-37-HASD-1
VB-48-HASD
VB-57-HASD
VB-73-HASD-2
VB-75-HASD
VB-84-HASD-2
VB-95-HASD
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Q697
Abstract: No abstract text available
Text: SPST DIODE SWITCH SERIES QB, QN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0,02 to 18.0 GHz. RF Impedance: 50 Ohms, RF Power: +20 dBm operational. Switches without drivers require +50 mA maximum for the "off" condi
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XB-98-HAD-1
Abstract: No abstract text available
Text: BROADBAND SPUT DIODE SWITCH HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES XB, XL, XN GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power DC Requirements: Temperature Information: Switching Speed: Connectors: 0.02 to 18.0 GHz. 50 6 h m s .
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b14a
Abstract: A47AD b14ad B-14-AD B53h
Text: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,
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Untitled
Abstract: No abstract text available
Text: SP3T DIODE SWITCH S E R IE S VB, VN REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL INFORMATION Series VB, VN, switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent
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VN-77-ASD
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