decodeur
Abstract: tda 1025 demodulateur tda1057 regulateur de tension tda 1057 "PAL Decoder" modulateur de couleur 8A35
Text: CB-179 T0-116 CB-161 CB-2 T.V. R ad io (continued) Radio T. V. (suite) A pplication s Ap plicatio n s Type Type S uffix Suffixe Case B oîtie r 2 CB-161 Temperature compensated fixed voltage regulator Régulateur de tension fixe com pensé en température
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CB-161
CB-179
O-116
decodeur
tda 1025
demodulateur
tda1057
regulateur de tension
tda 1057
"PAL Decoder"
modulateur de couleur
8A35
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AD162
Abstract: AD161 ad 162 AD 161 valvo transistoren valvo AD-161 germanium transistoren ScansUX7 ad161ad
Text: AD 162 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR für Endstufen, als Transistorpaar für Gegentakt-B-Schaltungen, mit AI 161 als komplementäres Paar Mechanische Daten: GehKuse: Metal1 9 A 2 nach DIN 41875 Der Kollektor ist mit dem Metal1gehäuse 1e itend verbunden.
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AD161
Abstract: ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7
Text: AD 161 G E R M A N I U M ~ NF N - NF - L E I S T U N G S T R A N S I S T O R f/Ir Ends t u f e n , Mechanische mit A D 162 als k o m p l e m e n t S r e s Daten: Gehffuse: Metall 9 A 2 n ach D I N 41 max. 8,9 10,3 *Q6 875 * D e r K o l l e k t o r ist mit
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max-19
AD161
ad 161
AD162
Valvo Aa
valvo transistoren
valvo
ad 162
AD-161
lastwiderstand-zulassig
ScansUX7
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fmr461
Abstract: No abstract text available
Text: REJ09B0019-0091Z R8C/10 Group 16 Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / R8C /Tiny SERIES Preliminary Before using this material, please visit our website to confirm that this is the most current document available. Rev. 0.91
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REJ09B0019-0091Z
R8C/10
16-BIT
fmr461
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ad 161 transistor
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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16N170
16N170
O-268
O-247
ad 161 transistor
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752 J 1600 V CAPACITOR
Abstract: 16N170 BiMOSFET
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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16N170
O-268
O-247
752 J 1600 V CAPACITOR
16N170
BiMOSFET
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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42N170
O-247
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42N170
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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42N170
42N170
O-268
O-247
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16N170
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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16N170A
16N170A
O-268
O-247
16N170
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16N170A
Abstract: diode 22 161 smd
Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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16N170A
16N170A
diode 22 161 smd
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capacitor 0,1 mF 50V
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2000 watts power amplifier circuit diagram
Text: PTF 10137 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization
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P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
capacitor 0,1 mF 50V
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2000 watts power amplifier circuit diagram
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transistor buz 36
Abstract: transistor buz 19 BUZ11 transistor buz 10 al p80 transistor transistor buz 11 C67078-S1330-A3 transistor buz 90 BUZ 140 L
Text: SIEM ENS SIPMOS Power Transistor • • • • BUZ 11 AL N channel Enhancement mode Logic Level Avalanche-rated Type VDS /d •^DS on Package 1> Ordering Code BUZ 11 AL 50 V 26 A 0.055 Q TO-220 AB C67078-S1330-A3 Maximum Ratings Parameter Symbol Values
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O-220
C67078-S1330-A3
SIL02831
SIL02834
transistor buz 36
transistor buz 19
BUZ11
transistor buz 10
al p80 transistor
transistor buz 11
transistor buz 90
BUZ 140 L
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FZH 161
Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency
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AT-31625
OT-223
AT-31625
5965-5911E
FZH 161
FZH 111
FZH 181
transistor I 17-13 0773
CBC 184 transistor
FZH 175
S3230
FZH 165
FZH 165 b
fzh 171
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mdd 1051
Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY
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1950W9B
1950W9A
GBfMi14NIUM,
UG-491AW
91-6C
S-1950W9B
Force-11
s9614163)
mdd 1051
circuit k 3683
916c
Transistors marking WZ
ke marking transistor
transistor xl 3001
S9614
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MUNICH256 - PEB 20256
Abstract: 20256 ram munich256 hdlc PEF 20256 DD25 MUNICH256 NC20 NC22 NC24 PEF 20256 E
Text: Data Sheet, DS2, April 2001 MUNICH256 Multichannel Network Interface Controller for HDLC/PPP PEB 20256 E Version 2.1 Datacom N e v e r s t o p t h i n k i n g . Edition 04.2001 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany
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MUNICH256
D-81541
MUNICH256 - PEB 20256
20256 ram
munich256 hdlc
PEF 20256
DD25
MUNICH256
NC20
NC22
NC24
PEF 20256 E
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Untitled
Abstract: No abstract text available
Text: ZETEX ZXT12N20DX SuperS0T4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=20V; Rsat = 40m il; lc= 3.5A DESCRIPTION T his n e w 4th g e n e ra tio n u ltra lo w sa tu ra tio n tra n s is to r u tilise s th e Z ete x m a trix s tru c tu re c o m b in e d w ith ad va nce d a sse m b ly te c h n iq u e s to give
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ZXT12N20DX
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UFN150
Abstract: UFN152
Text: UFN150 UFN151 UFN152 UFN153 POWER MOSFET TRANSISTORS 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN150
UFN151
UFN152
UFN153
UFN151
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30n50 mosfet
Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600
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O-263
O-263AA
O-247
IXGA10N60A
IXGA24N60A
IXGH32N60B
IXGH50N60AS
IXGA10N60U1
30n50 mosfet
DSE119-06AS
VM0400-02F
MCC SMD DIODE
300-06DA
smd43
35-06AS
500-06DA
250-12DA
mosfet p channel
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2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Abstract: 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM G200 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
Text: PTF 10147 10 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10147 is a 10 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 58% efficiency and 16.5 dB of gain. Nitride surface passivation and full gold metallization
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P4525-ND
P5182-ND
1-877-GOLDMOS
1301-PTF
2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
G200
2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
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2222A
Abstract: No abstract text available
Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.
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AT-31625
OT-223
AT-31625
1997H
5965-5911E
2222A
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Untitled
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts power output. Nitride surface passivation and
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P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
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G200
Abstract: No abstract text available
Text: PTF 10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10136 is a 6 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 57% efficiency with 19 dB of gain. Nitride surface passivation and full gold metallization
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P4525-ND
P5782-ND
1-877-GOLDMOS
1301-PTF
G200
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Untitled
Abstract: No abstract text available
Text: 32E D • Ô S 3 b 3 2 Q Q ü l 7 QSb 0 H S I P . N P N Silicon RF Transistor BFS 17P S I E M E N S / SPCL-, S E M I C O N D S r ~ 31 _ • For broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. 6 CECC-type available: CECC 50002/262.
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BFS17P
62702-F940
OT-23
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MRF947RT3
Abstract: z149 MRF947AT1
Text: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, H igh-Frequency Transistors D esigned for use in high gain, lo w noise s m a ll-s ig n a l am plifiers. T his series fea tu res e xce lle n t b ro ad ban d linearity and is offere d in a v a rie ty o f packages.
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MMBR941LT1/D
MMBR941
MRF941
MRF947
F9411
18A-05
MRF9411LT1,
MRF9411BLT1,
MRF947RT3
z149
MRF947AT1
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