b0375
Abstract: D-12
Text: MPCFPE32B/AD 12/2001 REV 2 Programming Environments Manual For 32-Bit Implementations of the PowerPC Architecture HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447
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MPCFPE32B/AD
32-Bit
b0375
D-12
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Untitled
Abstract: No abstract text available
Text: MPC603EUM/AD Q2/02 REV 3 MPC603e RISC Microprocessor User’s Manual HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd. SPS, Technical Information Center
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MPC603EUM/AD
Q2/02
MPC603e
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PDF
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SIEMENS 1200
Abstract: siemens dioden bup203 C67078-A4400-A2
Text: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2
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OCR Scan
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C67078-A4401-A2
C67078-A4402-A2
C67078-A4205-A2
C67078-A4202-A2
C67078-A4200-A2
O-220
O-218
SIEMENS 1200
siemens dioden
bup203
C67078-A4400-A2
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PDF
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930 TSSOP8
Abstract: NTQD6866T1 NTQD6866 NP1F
Text: NTQD6866 Product Preview HDTMOS3e TSSOP-8 Dual, Common-Drain Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com Features • • • • • • • New Low Profile TSSOP–8 Package Ultra Low RDS on Higher Efficiency Extending Battery Life
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NTQD6866
r14525
NTQD6866/D
930 TSSOP8
NTQD6866T1
NTQD6866
NP1F
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mps3646 equivalent
Abstract: transistor N 343 AD MPS3646 ad 303 transistor
Text: ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage
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MPS3646
226AA)
r14525
MPS3646/D
mps3646 equivalent
transistor N 343 AD
MPS3646
ad 303 transistor
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PDF
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1N916
Abstract: P2N2907A
Text: ON Semiconductort Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous
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P2N2907A
226AA)
r14525
P2N2907A/D
1N916
P2N2907A
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PDF
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MARKING P2F
Abstract: 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 p2f sot-223
Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount
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PZT2907AT1
OT-223
PZT2222AT1
OT-223
PZT2907AT1
inch/1000
r14525
PZT2907AT1/D
MARKING P2F
1N916
PZT2222AT1
PZT2907AT3
p2f sot-223
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PDF
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MPS6507
Abstract: No abstract text available
Text: Amplifier Transistor MPS6507 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C
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MPS6507
226AA)
r14525
MPS6507/D
MPS6507
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PDF
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MPS4250
Abstract: No abstract text available
Text: Transistor MPS4250 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Emitter Voltage VCES –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous
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MPS4250
r14525
MPS4250/D
MPS4250
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PDF
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MPS4126
Abstract: MSP41 MCP4126
Text: Amplifier Transistor MPS4126 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCE –25 Vdc Collector–Base Voltage VCB –25 Vdc Emitter–Base Voltage VEB –4.0 Vdc Collector Current — Continuous IC –200 mAdc Total Power Dissipation @ TA = 25°C
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MPS4126
r14525
MCP4126/D
MPS4126
MSP41
MCP4126
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PDF
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MPS6560
Abstract: No abstract text available
Text: ON Semiconductort MPS6560 Audio Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C
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MPS6560
226AA)
r14525
MPS6560/D
MPS6560
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PDF
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MPS3906
Abstract: No abstract text available
Text: ON Semiconductort MPS3906 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous
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MPS3906
r14525
MPS3906/D
MPS3906
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PDF
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MPSA27
Abstract: MPS-A27
Text: ON Semiconductort Darlington Transistor MPSA27 NPN Silicon MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C
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MPSA27
226AA)
r14525
MPSA27/D
MPSA27
MPS-A27
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PDF
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bc368 equivalent
Abstract: BC368 BC369
Text: ON Semiconductort NPN BC368, -25 PNP BC369 Amplifier Transistors COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO
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BC368,
BC369
r14525
BC368/D
bc368 equivalent
BC368
BC369
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PDF
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1N3195
Abstract: MPS5179
Text: High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous
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MPS5179
226AA)
r14525
MPS5179/D
1N3195
MPS5179
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PDF
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BF493S
Abstract: MPSA92 MPSA93
Text: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –6.0 Vdc Collector Current — Continuous
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BF493S
r14525
BF493S/D
BF493S
MPSA92
MPSA93
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PDF
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BC372
Abstract: BC373
Text: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous
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BC372
BC373
226AA)
r14525
BC372/D
BC372
BC373
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PDF
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MPS6428
Abstract: No abstract text available
Text: Amplifier Transistor MPS6428 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C
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MPS6428
226AA)
r14525
MPS6428/D
MPS6428
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PDF
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BC639RL1
Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR
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BC635,
BC637,
BC639
BC635
BC637
r14153
BC635/D
BC639RL1
BC639ZL1
BC635
BC635RL1
BC635ZL1
BC637
BC639
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PDF
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BC639
Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR
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BC635,
BC637,
BC639
BC635
BC637
r14153
BC635/D
BC639
BC635
BC635RL1
BC635ZL1
BC637
BC639RL1
BC639ZL1
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PDF
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MJE18002
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a
Text: ON Semiconductort MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die
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MJE18002
MJE18002
r14525
MJE18002/D
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
mpf930a
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PDF
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BC549B
Abstract: BC550B TRANSISTOR BC550B NPN Transistor BC549B BC549 BC550
Text: Low Noise Transistors BC549B,C BC550B,C NPN Silicon MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector–Emitter Voltage VCEO 30 45 Vdc Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100
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BC549B
BC550B
BC549
BC550
226AA)
r14525
BC549B/D
TRANSISTOR BC550B
NPN Transistor BC549B
BC549
BC550
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PDF
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Untitled
Abstract: No abstract text available
Text: NTGS3446 Product Preview HDTMOS3e Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery
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NTGS3446
10tco
r14525
NTGS3446/D
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PDF
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MPSA28
Abstract: MPSA29
Text: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage
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MPSA28
MPSA29*
MPSA29
226AA)
r14525
MPSA28/D
MPSA28
MPSA29
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PDF
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