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    AD 303 TRANSISTOR Search Results

    AD 303 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    AD 303 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b0375

    Abstract: D-12
    Text: MPCFPE32B/AD 12/2001 REV 2 Programming Environments Manual For 32-Bit Implementations of the PowerPC Architecture HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447


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    MPCFPE32B/AD 32-Bit b0375 D-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: MPC603EUM/AD Q2/02 REV 3 MPC603e RISC Microprocessor User’s Manual HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd. SPS, Technical Information Center


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    MPC603EUM/AD Q2/02 MPC603e PDF

    SIEMENS 1200

    Abstract: siemens dioden bup203 C67078-A4400-A2
    Text: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2


    OCR Scan
    C67078-A4401-A2 C67078-A4402-A2 C67078-A4205-A2 C67078-A4202-A2 C67078-A4200-A2 O-220 O-218 SIEMENS 1200 siemens dioden bup203 C67078-A4400-A2 PDF

    930 TSSOP8

    Abstract: NTQD6866T1 NTQD6866 NP1F
    Text: NTQD6866 Product Preview HDTMOS3e TSSOP-8 Dual, Common-Drain Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com Features • • • • • • • New Low Profile TSSOP–8 Package Ultra Low RDS on Higher Efficiency Extending Battery Life


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    NTQD6866 r14525 NTQD6866/D 930 TSSOP8 NTQD6866T1 NTQD6866 NP1F PDF

    mps3646 equivalent

    Abstract: transistor N 343 AD MPS3646 ad 303 transistor
    Text: ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage


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    MPS3646 226AA) r14525 MPS3646/D mps3646 equivalent transistor N 343 AD MPS3646 ad 303 transistor PDF

    1N916

    Abstract: P2N2907A
    Text: ON Semiconductort Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous


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    P2N2907A 226AA) r14525 P2N2907A/D 1N916 P2N2907A PDF

    MARKING P2F

    Abstract: 1N916 PZT2222AT1 PZT2907AT1 PZT2907AT3 p2f sot-223
    Text: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount


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    PZT2907AT1 OT-223 PZT2222AT1 OT-223 PZT2907AT1 inch/1000 r14525 PZT2907AT1/D MARKING P2F 1N916 PZT2222AT1 PZT2907AT3 p2f sot-223 PDF

    MPS6507

    Abstract: No abstract text available
    Text: Amplifier Transistor MPS6507 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C


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    MPS6507 226AA) r14525 MPS6507/D MPS6507 PDF

    MPS4250

    Abstract: No abstract text available
    Text: Transistor MPS4250 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Emitter Voltage VCES –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous


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    MPS4250 r14525 MPS4250/D MPS4250 PDF

    MPS4126

    Abstract: MSP41 MCP4126
    Text: Amplifier Transistor MPS4126 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCE –25 Vdc Collector–Base Voltage VCB –25 Vdc Emitter–Base Voltage VEB –4.0 Vdc Collector Current — Continuous IC –200 mAdc Total Power Dissipation @ TA = 25°C


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    MPS4126 r14525 MCP4126/D MPS4126 MSP41 MCP4126 PDF

    MPS6560

    Abstract: No abstract text available
    Text: ON Semiconductort MPS6560 Audio Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C


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    MPS6560 226AA) r14525 MPS6560/D MPS6560 PDF

    MPS3906

    Abstract: No abstract text available
    Text: ON Semiconductort MPS3906 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCBO –40 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous


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    MPS3906 r14525 MPS3906/D MPS3906 PDF

    MPSA27

    Abstract: MPS-A27
    Text: ON Semiconductort Darlington Transistor MPSA27 NPN Silicon MAXIMUM RATINGS Rating Symbol MPSA27 Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C


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    MPSA27 226AA) r14525 MPSA27/D MPSA27 MPS-A27 PDF

    bc368 equivalent

    Abstract: BC368 BC369
    Text: ON Semiconductort NPN BC368, -25 PNP BC369 Amplifier Transistors COLLECTOR 2 COLLECTOR 2 3 BASE 3 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO


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    BC368, BC369 r14525 BC368/D bc368 equivalent BC368 BC369 PDF

    1N3195

    Abstract: MPS5179
    Text: High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous


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    MPS5179 226AA) r14525 MPS5179/D 1N3195 MPS5179 PDF

    BF493S

    Abstract: MPSA92 MPSA93
    Text: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –6.0 Vdc Collector Current — Continuous


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    BF493S r14525 BF493S/D BF493S MPSA92 MPSA93 PDF

    BC372

    Abstract: BC373
    Text: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous


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    BC372 BC373 226AA) r14525 BC372/D BC372 BC373 PDF

    MPS6428

    Abstract: No abstract text available
    Text: Amplifier Transistor MPS6428 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 50 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C


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    MPS6428 226AA) r14525 MPS6428/D MPS6428 PDF

    BC639RL1

    Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
    Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR


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    BC635, BC637, BC639 BC635 BC637 r14153 BC635/D BC639RL1 BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639 PDF

    BC639

    Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
    Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR


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    BC635, BC637, BC639 BC635 BC637 r14153 BC635/D BC639 BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1 PDF

    MJE18002

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a
    Text: ON Semiconductort MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die


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    MJE18002 MJE18002 r14525 MJE18002/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105 mpf930a PDF

    BC549B

    Abstract: BC550B TRANSISTOR BC550B NPN Transistor BC549B BC549 BC550
    Text: Low Noise Transistors BC549B,C BC550B,C NPN Silicon MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector–Emitter Voltage VCEO 30 45 Vdc Collector–Base Voltage VCBO 30 50 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 100


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    BC549B BC550B BC549 BC550 226AA) r14525 BC549B/D TRANSISTOR BC550B NPN Transistor BC549B BC549 BC550 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTGS3446 Product Preview HDTMOS3e Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate http://onsemi.com Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery


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    NTGS3446 10tco r14525 NTGS3446/D PDF

    MPSA28

    Abstract: MPSA29
    Text: ON Semiconductort MPSA28 MPSA29* Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit Collector–Emitter Voltage VCES 80 100 Vdc Collector–Base Voltage VCBO 80 100 Vdc Emitter–Base Voltage


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    MPSA28 MPSA29* MPSA29 226AA) r14525 MPSA28/D MPSA28 MPSA29 PDF