WED2DL36513V25BC
Abstract: WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V40BC WED2DL36514V25BC WED2DL36514V35BC WED2DL36514V38BC
Text: WED2DL36513V WED2DL36513AV 512Kx36 Synchronous Pipeline Burst SRAM PRELIMINARY* FEATURES DESCRIPTION • Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs high-speed, lowpower CMOS designs that are fabricated using an advanced
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WED2DL36513V
WED2DL36513AV
512Kx36
133MHz
WED2DL36514AV25BC
512Kx36
WED2DL36514AV35BC
WED2DL36514AV38BC
WED2DL36513V25BC
WED2DL36513V35BC
WED2DL36513V38BC
WED2DL36513V40BC
WED2DL36514V25BC
WED2DL36514V35BC
WED2DL36514V38BC
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Untitled
Abstract: No abstract text available
Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76
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AS5SS256K36
100-pin
100-lea
AS5SS256K36
-40oC
85oC1
-55oC
125oC
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Untitled
Abstract: No abstract text available
Text: SSRAM AS5SS256K36 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS z z MARKING -8.5* -10 DQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 80 79 78 77 76
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AS5SS256K36
100-pin
100-lea
AS5SS256K36
-40oC
85oC1
-55oC
125oC
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Untitled
Abstract: No abstract text available
Text: SB61S1024B Silicon-Based Technology Very High Speed and Low Power Memory 32Kx 32 BURST-PIPELINED CMOS SYNCHRONOUS SRAM PRELIMINARY Description: The SB61S1024B series products are 32,768-words by 32-bits burst-pipelined CMOS synchronous SRAMs fabricated with advanced 8" wafer submicron CMOS technology. Using advanced
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SB61S1024B
SB61S1024B
768-words
32-bits
100-pin
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cd 555
Abstract: WED2DL36513V25BC WED2DL36513V35BC WED2DL36513V38BC WED2DL36513V38BI WED2DL36513V40BC WED2DL36513V40BI
Text: WED2DL36513V White Electronic Designs 512Kx36 Synchronous Pipeline Burst SRAM FEATURES DESCRIPTION • Fast clock speed: 200, 166, 150 & 133MHz The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDCs 16Mb
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WED2DL36513V
512Kx36
133MHz
512Kx36,
WED2DL36513V25BC
512Kx36
WED2DL36513V35BC
WED2DL36513V38BC
WED2DL36513V40BC
cd 555
WED2DL36513V25BC
WED2DL36513V35BC
WED2DL36513V38BC
WED2DL36513V38BI
WED2DL36513V40BC
WED2DL36513V40BI
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11 ak 30 a4
Abstract: adsh 13 SB61S1024B-4 SB61S1024B-5
Text: SB61S1024B Silicon-Based Technology Very High Speed and Low Power Memory 32Kx 32 BURST-PIPELINED CMOS SYNCHRONOUS SRAM PRELIMINARY Description: The SB61S1024B series products are 32,768-words by 32-bits burst-pipelined CMOS synchronous SRAMs fabricated with advanced 8" wafer submicron CMOS technology. Using advanced
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SB61S1024B
SB61S1024B
768-words
32-bits
100-pin
11 ak 30 a4
adsh 13
SB61S1024B-4
SB61S1024B-5
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ftr 02
Abstract: F.TR.02 19 IDT BH package marking marking a7r
Text: AL5DS9xx9V Data Sheets 3.3V Synchronous Dual-Port SRAM AL5DS9349V/59V/69V/79V/89V 4K/8K/16K/32K/64K x 18 AL5DS9269V/79V/89V 16K/32K/64K x 16 AL5DS9149V/59V/69V/79V/89V/99V 4K/8K/16K/32K/64K/128K x 9 AL5DS9069V/79V/89V/99V 16K/32K/64K/128K x 8 Preliminary AL5DS9xx9V
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AL5DS9349V/59V/69V/79V/89V
4K/8K/16K/32K/64K
AL5DS9269V/79V/89V
16K/32K/64K
AL5DS9149V/59V/69V/79V/89V/99V
4K/8K/16K/32K/64K/128K
AL5DS9069V/79V/89V/99V
16K/32K/64K/128K
2002-Copyright
ftr 02
F.TR.02 19
IDT BH package marking
marking a7r
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Untitled
Abstract: No abstract text available
Text: tm TE CH Preliminary T35L3232B SYNCHRONOUS BURST SRAM 32K x 32 SRAM FEATURES GENERAL DESCRIPTION ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 ns - Flow-through – 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply
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T35L3232B
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T35L6432B
Abstract: No abstract text available
Text: tm TE CH Preliminary T35L6432B SYNCHRONOUS BURST SRAM 64K x 32 SRAM Pipeline and Flow-Through Burst Mode T35L6432B-4T FEATURES ¡E FT pin for user configurable pipeline or flowthrough operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 / 5 ns - Flow-through – 9 / 10 / 11 / 12 ns
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T35L6432B
T35L6432B-4T
100-LEAD
T35L6432B
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AMBE 2
Abstract: NET-2000 AMBE-1000 AMBE-2000 ambe2 4P4C handset NET2000 audio sender wireless AMBE-2020 VOCODERS voip
Text: Digital Voice Systems, Inc. The Speech Compression Specialists Net-2000 Voice Codec Unit User’s Manual Version 1.0 March 2004 Net-2000 Voice Codec Unit User’s Manual Version 1.0, March 2004 Copyright, 2004 Digital Voice Systems, Inc 234 Littleton Road
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Net-2000
Net-2000
Net-2000TM
AMBE 2
AMBE-1000
AMBE-2000
ambe2
4P4C handset
NET2000
audio sender wireless
AMBE-2020
VOCODERS voip
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A63G7332
Abstract: No abstract text available
Text: A63G7332 Series PRELIMINARY November 1997, Version 1.0 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output Features Fast access times: 4.5/5/5.5 ns Single +3.3V+10% or +3.3V-5% power supply Separate +2.5V+0.4V/-0.12V isloated ouptut buffer
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A63G7332
100-pin
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80486 microprocessor pin out diagram
Abstract: ZL112 80486 microprocessor block diagram and pin diagram CY7C1031 CY7C1032 80486 microprocessor circuit diagram block diagram of processor 80486 wd153 intel 80486 pin diagram i486 sx
Text: CY7C1031 CY7C1032 CYPRESS 64K x 18 Synchronous Cache RAM Functional Description Features • Supports 66-MHz Pentium microprocessor cache sys tems with zero wait states • 64K by 18 common I/O • Fast clock-to-output times — 8.5 ns • Two-bit wraparound counter supporting Pentium mi
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66-MHz
7C1031)
7C1032)
52-pin
CY7C1031
CY7C1032
CY7C1031
CY7C1032
80486 microprocessor pin out diagram
ZL112
80486 microprocessor block diagram and pin diagram
80486 microprocessor circuit diagram
block diagram of processor 80486
wd153
intel 80486 pin diagram
i486 sx
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Untitled
Abstract: No abstract text available
Text: CY7C1331 CY7C1332 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • Direct interface with the processor and external cache controller • Supports 50-M Hz Pentium processor cache systems with zero wait states • Asynchronous output enable T h e CY7C1331 is designed fo r Intel Pen
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CY7C1331
CY7C1332
CY7C1331
CY7C1332
52-Lead
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MT58LC32K32C5
Abstract: z3-z1 D01400 LG ctv circuit diagram
Text: PRELIMINARY SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • Fast access times: 4.5, 5, 6, 7, 8 and 9ns Fast O E# access times: 4.5,5 and 6ns Single +3.3V +10%/-5% p ow er supply
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MT58LC32K32/36C5
MT58LC32KA2/36C5
MT58LC32K32C5
z3-z1
D01400
LG ctv circuit diagram
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM l^ ic n o N 128K X 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • OPTIONS MARKING • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)
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MT58LC128K16C6
100-pin
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 64K x 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES PIN ASSIGNMENT Top View • • • • • • • • Fast access tim es: 4.5, 5, 6, 7, 8 and 9ns Fast O E # access tim e: 4.5, 5 and 6ns
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MT58LC64K16/18D8
6LC44K
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CY7C178
Abstract: CY7C179 AL4A
Text: PRELIMINARY '# CYPRESS 32Kx 18 Synchronous Cache RAM Features • Direct interface with the processor and external cache controller • Supports 66-MHz Pentium micro processor cache systems with zero wait states • Asynchronous output enable • I/Os capable o f 3.3V operation
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CY7C178
CY7C179
66-MHz
CY7C178)
CY7C179)
52-pin
CY7C179
inter-12JC
52-Lead
AL4A
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Untitled
Abstract: No abstract text available
Text: CY7C1031 CY7C1032 PRELIMINARY ?CYPRESS Functional Description continued Single Write Accesses Initiated by ADSP This access is initiated when the following conditions are satisfied at clock rise: (1) is LOW and (2) AD5P is LOW. ADSP-triggered write cycles are completed in two clock periods. The address at Ao
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CY7C1031
CY7C1032
CY7C1031
CY7C1032
CY7C1032â
52-Lead
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Untitled
Abstract: No abstract text available
Text: ADVANCE 128K • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby Common data inputs and data outputs
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100-Pin
100-lead
bus11T
160-PIN
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Untitled
Abstract: No abstract text available
Text: ADVANCE SYNCHRONOUS SRAM 64K x 32/36 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 5.5, 6 and 7ns
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MT58LC64K32/36G1
LC64K32/36G1
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT58LC32K32/36E1 32K x 32/36 SYNCBURST SRAM |V | = R O N 32K x 32/36 SRAM O D A A il O t lM IV I +3-3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES PIN ASSIGNMENT (Top View Fast access times: 8.5,9, 10 and 11ns Fast OE# access time: 5ns
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MT58LC32K32/36E1
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T58LC128K16/18D8 128K X 16/18 SYNCBURST SRAM |U |IC = R O N 128Kx 16/18 SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View 100-Pin TQFP Fast access tim es: 4.5, 5, 6, 7, 8 and 9ns
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T58LC128K16/18D8
MT58LC126K16M808
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T58LC256K16/18F1 256K X 16/18 SYNCBURST SRAM l ^ i c n o N SYNCHRONOUS SRAM 256K x 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • • • • • • • • • • OPTIONS 100-Pin TQFP
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T58LC256K16/18F1
MT58LC256K16M8F1
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az18
Abstract: No abstract text available
Text: ADVANCE 256K SYNCHRONOUS SRAM MT58LC256K16/18B3 16/18 SYNCBURST SRAM X 2 5 6 K X 1 6 /1 8 S R A M +3.3V SUPPLY, FLOW-THROUGH AND BURST COUNTER FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5, 9, 10 and 11ns Fast OE# access time: 5ns
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MT58LC256K16/18B3
100-lead
MT58LC256K16/1SB3
i11937
az18
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