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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: シングル N チャンネル MOSFET ELM5E400PA-S •概要 ■特長 ELM5E400PA-S は低入力容量低電圧駆動、低・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=0.7A ・ Rds on = 360mΩ (Vgs=4.5V) ・ Rds(on) = 420mΩ (Vgs=2.5V)	Original	PDF	ELM5E400PA-S AFN1012
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM5E402PA-S •General description ■Features ELM5E402PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage	Original	PDF	ELM5E402PA-S ELM5E402PA-S AFN1012E
ELM5E402PA Abstract: No abstract text available Text: 单 N 沟道 MOSFET ELM5E402PA-S •概要 ■特点 ELM5E402PA-S 是 N 沟道低输入电容，低工作电 •Vds=20V 压，低导通电阻的大电流 MOSFET。 · Id=0.7A ·Rds on = 360mΩ (Vgs=4.5V) ·Rds(on) = 420mΩ (Vgs=2.5V) ·Rds(on) = 560mΩ (Vgs=1.8V)	Original	PDF	ELM5E402PA-S AFN1012E ELM5E402PA
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM5E400PA-S •General description ■Features ELM5E400PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage	Original	PDF	ELM5E400PA-S ELM5E400PA-S AFN1012
ELM5E400PA Abstract: No abstract text available Text: 单 N 沟道 MOSFET ELM5E400PA-S •概要 ■特点 ELM5E400PA-S 是 N 沟道低输入电容，低工作电 •Vds=20V 压，低导通电阻的大电流 MOSFET。 · Id=0.7A ·Rds on = 360mΩ (Vgs=4.5V) ·Rds(on) = 420mΩ (Vgs=2.5V) ·Rds(on) = 560mΩ (Vgs=1.8V)	Original	PDF	ELM5E400PA-S OT-523( AFN1012 ELM5E400PA
Untitled Abstract: No abstract text available Text: シングル N チャンネル MOSFET ELM5E402PA-S •概要 ■特長 ELM5E402PA-S は低入力容量低電圧駆動、低・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=0.7A ・ Rds on = 360mΩ (Vgs=4.5V) ・ Rds(on) = 420mΩ (Vgs=2.5V)	Original	PDF	ELM5E402PA-S AFN1012E
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM5E400PA-S •General description ■Features ELM5E400PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=20V Id=0.7A Rds(on) = 360mΩ (Vgs=4.5V) Rds(on) = 420mΩ (Vgs=2.5V)	Original	PDF	ELM5E400PA-S ELM5E400PA-S AFN1012
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM5E402PA-S •General description ■Features ELM5E402PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=20V Id=0.7A Rds(on) = 360mΩ (Vgs=4.5V) Rds(on) = 420mΩ (Vgs=2.5V)	Original	PDF	ELM5E402PA-S ELM5E402PA-S AFN1012E