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    AGILENT ADS BALUN Search Results

    AGILENT ADS BALUN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD-CONNPBNCJK-000 Amphenol Cables on Demand Amphenol AD-CONNPBNCJK-000 N Plug to BNC Jack Adapter - Amphenol Connex RF Adapter (N Male / BNC Female) 2 Datasheet
    AD-COSMAJSMBP-000 Amphenol Cables on Demand Amphenol AD-COSMAJSMBP-000 SMA Jack to SMB Plug Adapter - Amphenol Connex RF Adapter (SMA Female / SMB Male) 2 Datasheet
    AD-CSMAJMMCXP-000 Amphenol Cables on Demand Amphenol AD-CSMAJMMCXP-000 SMA Jack to MMCX Plug Adapter - Amphenol Connex RF Adapter (SMA Female / MMCX Male) 2 Datasheet
    JA4650-BL Coilcraft Inc Transformer, for AD quad digital isolators, SMT, RoHS Visit Coilcraft Inc
    JA4631- Coilcraft Inc Transformer, for AD quad digital isolators, SMT, RoHS Visit Coilcraft Inc

    AGILENT ADS BALUN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EEsof Circuit Components for Manual for ADS

    Abstract: No abstract text available
    Text: Agilent GENESYS Affordable • Accurate • Easy-to-Use An integrated simulation and synthesis design tool for RF/microwave circuit board and subsystem designers Agilent Genesys is an affordable, accurate, easy-to-use RF and microwave simulation tool created for the circuit


    Original     		PDF

    Design Considerations for BJT Active Mixers

    Abstract: Signal mixing NE602 nokia 5300 agilent ads balun diodes 4001 8970B nokia 1662 NE602 equivalent EESof nokia fasb
    Text: Noise in Ring Topology Mixers Rick Poore Agilent EEsof EDA 1 Introduction For a classical double-balanced ring-diode mixer, it is expected that the conversion loss 4–5 dB should match the noise figure. This document explores the formal definition of noise figure and


    Original     		PDF

    85071E

    Abstract: No abstract text available
    Text: Agilent E5071C ENA Network Analyzer 9 kHz to 4.5/6.5/8.5 GHz 100 kHz to 4.5/6.5/8.5 GHz with bias tees 300 kHz to 14/20 GHz (with bias tees) The industry standard in RF network analysis ENA – New Standards in Speed, Accuracy and Versatility Key features


    Original     		PDF E5071C BP-09-27-13) 5989-5478EN 85071E

    mixer service manual

    Abstract: TQTRX
    Text: Production Released Process TQRLC TQTRx Advanced PassivesFoundry Foundry Service Service GaAs MESFET Features • • • • • • • • Thick 4 Layer Metal; > 9 µm total thickness High Density Interconnects: • 3 Global • 1 Local High-Q Passives; Inductor Q >50


    Original     		PDF

    TQTRX

    Abstract: No abstract text available
    Text: Production Released Process TQRLC TQTRx Advanced PassivesFoundry Foundry Service Service GaAs MESFET Passivation Via Metal 3 Metal 3 - 5 um Features • • Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • Metal 1 - 2 um Dielectric MIM Metal Metal 0 MIM Capacitor


    Original     		PDF

    HP4991A

    Abstract: DCS1800 MLG0603Q MLG0603S tdk VCO Ansoft tdk VCO gsm
    Text: Multilayer Chip Inductors For High-frequency Circuits And Modules, MLG series 0603Q type Conforming to RoHS Directive Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and


    Original     		PDF 0603Q 2002/95/EC, BSF-E03EC MLG0603Q HP4991A DCS1800 MLG0603Q MLG0603S tdk VCO Ansoft tdk VCO gsm

    agilent ads balun

    Abstract: EB212 MRF19125 MRF21180 J493 advanced design system
    Text: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data


    Original     		PDF EB212 agilent ads balun EB212 MRF19125 MRF21180 J493 advanced design system

    Motorola transistors MRF

    Abstract: motorola MRF agilent ads balun LDMOS push pull EB212 MRF19125 MRF21180
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB212/D SEMICONDUCTOR ENGINEERING BULLETIN EB212 Using Data Sheet Impedances for RF LDMOS Devices Prepared by: Darin Wagner Motorola Semiconductor Products Sector Freescale Semiconductor, Inc.


    Original     		PDF EB212/D EB212 Motorola transistors MRF motorola MRF agilent ads balun LDMOS push pull EB212 MRF19125 MRF21180

    Untitled

    Abstract: No abstract text available
    Text: Agilent PNA-X Series Microwave Network Analyzers Reach for unrivaled excellence 1 Choose the leader in network analysis Industry’s Most Advanced RF Test Solution Reach for unrivaled excellence The PNA-X Series of microwave network analyzers are the culmination of Agilent’s 40-year legacy


    Original     		PDF 40-year BP-01-15-14) 5990-4592EN

    SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR

    Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: APRIL2008 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com NEW SYNTHESIZED SIGNAL GENERATOR OFFERS LOW COST, HIGH VALUE INSIDE THIS ISSUE: Transmission Lines on Ion-Implanted Silicon Wafers Spatial Combining of Microwave Noise Radiators Tutorial—Performance Capabilities of Antenna Arrays


    Original     		PDF APRIL2008 CD-1242-183-10S CD-1242-183-20S CD-1242-183-30S CD-402-802-10S CD-402-802-20S CD-402-802-30S CD-102-103-10S CD-102-103-20S CD-102-103-30S SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi booster schematic simple fm transmitter mini project report for engineering students Wifi Booster Circuit Diagram wifi signal booster schematic smd-transistor DATA BOOK 2.4 ghz FM wifi RECEIVER CIRCUIT DIAGRAM fm transistor radio mini project 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    SAWTEK 855898

    Abstract: VCO190-1960T double down conversion receiver AD8370 control software AN-851 ADF4360-8 AD9246 AD8344 AD8370 ADF4153
    Text: AN-851 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com A WiMax Double Downconversion IF Sampling Receiver Design by Eric Newman and Cecile Masse INTRODUCTION


    Original     		PDF AN-851 64-QAM AN06147-0-6/06 SAWTEK 855898 VCO190-1960T double down conversion receiver AD8370 control software AN-851 ADF4360-8 AD9246 AD8344 AD8370 ADF4153

    MLG1005S10NJ

    Abstract: MLG0603S5N6S VP-2941A HP4291A MLG0603S MLG1005S47NJ MLG1005S27NJ
    Text: Multilayer Chip Inductors For High-frequency Circuits And Modules, MLG series 0603S type Conforming to RoHS Directive Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and


    Original     		PDF 0603S 2002/95/EC, MLG1005S47NJT MLG1005S56NJT MLG1005S68NJT MLG1005S82NJT MLG1005SR10JT MLG1005SR12JT MLG1005SR15JT MLG1005SR18JT MLG1005S10NJ MLG0603S5N6S VP-2941A HP4291A MLG0603S MLG1005S47NJ MLG1005S27NJ

    GSM vco

    Abstract: saw gsm gsm Diplexer Ansoft transistor jt DCS1800 MLG0603Q MLG0603S agilent ads VCO
    Text: MLG series 0603Q type 0.3 0.03 Multilayer Chip Inductors For High-frequency Circuits And Modules, MLG series 0603Q type - New Lineup 0.6 0.03 0.3 0.03 C 0.06 0.04 B A B 0.65 to 0.95 0.15 0.05 A: 0.25 to 0.35 B : 0.2 to 0.3 C: 0.25 to 0.35 TDK CORPORATION


    Original     		PDF 0603Q MLG0603Q 800MHz MLG0603S GSM vco saw gsm gsm Diplexer Ansoft transistor jt DCS1800 MLG0603Q MLG0603S agilent ads VCO

    RF MESFET S parameters

    Abstract: TQTRX
    Text: Production Released Process TQTRp TQTRx Advanced Passives MESFETFoundry Foundry Service Service GaAs &MESFET Passivation Via Metal 3 Metal 3 - 5 um Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • • Dielectric MIM Metal NiCr Metal 0 N+ Isolation Implant


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURE ARTICLE PAGE 1 • OCTOBER 2009 www.mpdigest.com RF and Microwave Transformer Fundamentals by Mini-Circuits Introduction The purpose of this application note is to describe the fundamentals of RF and microwave transformers and to provide guidelines to users in selecting


    Original     		PDF hela-10, LT5514

    murata ltcc

    Abstract: siemens vdo siemens photo sensor N20E ltcc CR5000 ltcc chip IC tx2 murata Ceramic catalog
    Text: !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.


    Original     		PDF m/400 murata ltcc siemens vdo siemens photo sensor N20E ltcc CR5000 ltcc chip IC tx2 murata Ceramic catalog

    MLG1005S12NJT

    Abstract: Ansoft MLG1005S MLG0603S MLG1005 MLG1608 MLG0603S0N8CT MLG0603S47NJT MLG1005SR18JT
    Text: MLG series 0603S type L nH at 100MHz 0.6 Multilayer Chip Inductors For High-frequency Circuits And Modules, MLG series 0603S type 0.1nH step 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.5 1.6 0.2nH 1.8 2.0 2.2 0.3 0.03 2.4 2.7 3.0 0.6 0.03 E-24 3.3 3.6 0.15 0.05 0.3 0.03


    Original     		PDF 0603S 100MHz MLG1005 MLG0603S MLG1608 100nH MLG1005S47NJT MLG1005S12NJT Ansoft MLG1005S MLG0603S MLG1005 MLG1608 MLG0603S0N8CT MLG0603S47NJT MLG1005SR18JT

    copper permittivity

    Abstract: FR4 dielectric constant 2.45GHz SWRA236 permittivity FR 4 transformer calculator p600r CC2500 RF pcb antenna CC2500EM CC2500 dr cc2500 balun 50 ohm
    Text: Application Note AN068 Adapting TI LPRF Reference Designs for Layer Stacking By Rea Schmid Keywords • • • • • • • • 1 • • • • • • • Board Stacking for RF Design VSWR changes with Stacking Bandwidth and Layer Stacking PCB for CC25xx Devices


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    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE Application Note on Transformers AN-20-002 1 Introduction The purpose of this application note is to describe the fundamentals of RF and microwave transformers and to provide guidelines to users in selecting proper transformer to suit their


    Original     		PDF AN-20-002) hela-10 LT5514 AN-20-002 M127387

    N5249A PNA-X Microwave Network Analyzer

    Abstract: No abstract text available
    Text: Agilent PNA Family Microwave Network Analyzers Configuration Guide This configuration guide describes standard configurations, options, accessories, upgrade kits and compatible peripherals for the PNA Family microwave network analyzers. This guide should be used with the Agilent PNA Family data sheets for


    Original     		PDF N5249A N5241A N5242A N5244A N5245A N5247A N5221A N5222A N5224A N5225A N5249A PNA-X Microwave Network Analyzer

    CATV Wideband Transformer Splitter

    Abstract: agilent ads balun TC1-1-13 How RF Transformers Work welding transformer HELA-10 LT5514 TC1-1-13M ideal transformer AN-20-002
    Text: APPLICATION NOTE Application Note on Transformers AN-20-002 1 Introduction The purpose of this application note is to describe the fundamentals of RF and microwave transformers and to provide guidelines to users in selecting proper transformer to suit their


    Original     		PDF AN-20-002) hela-10 LT5514 AN-20-002 M127387 AN20002 CATV Wideband Transformer Splitter agilent ads balun TC1-1-13 How RF Transformers Work welding transformer HELA-10 TC1-1-13M ideal transformer

    Practical Wideband RF Power Transformers

    Abstract: No abstract text available
    Text: APPLICATION NOTE Application Note on Transformers AN-20-002 1 Introduction The purpose of this application note is to describe the fundamentals of RF and microwave transformers and to provide guidelines to users in selecting proper transformer to suit their


    Original     		PDF AN-20-002) AN-20-002 M150261 AN20002 Practical Wideband RF Power Transformers

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: STW81101 Multi-band RF frequency synthesizer with integrated VCOs Feature summary • Integer-N Frequency Synthesizer ■ Dual differential integrated VCOs with automatic center frequency calibration: – 3300 - 3900 MHz Direct output – 3800 - 4400 MHz (Direct output)


    Original     		PDF STW81101 VFQFPN28