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    AGR09130E Search Results

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    AGR09130E Price and Stock

    Advanced Semiconductor Inc AGR09130EF

    RF MOSFET Transistors 921-960MHz 150Watt Gain 18dB
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    Mouser Electronics AGR09130EF
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    • 10 $81.8
    • 100 $76.26
    • 1000 $76.26
    • 10000 $76.26
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    AGR09130E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AGR09130E TriQuint Semiconductor 130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09130EF Agere Systems FET Transistor, 130W, 921MHz-960MHz, N-Channel E-Mode, Lateral MOSFET Transistor Original PDF
    AGR09130EF Agere Systems 130 W, 921 MHz - 960 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09130EFDB Agere Systems Transistor Mosfet N-CH 30V 190A 3D2PAK T/R Original PDF
    AGR09130EU Agere Systems 130 W, 921 MHz - 960 MHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR09130EU Agere Systems FET Transistor, 130W, 921MHz-960MHz, N-Channel E-Mode, Lateral MOSFET Transistor Original PDF

    AGR09130E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor MARKING NC KRC

    Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP

    AGR09130E

    Abstract: AGR09130EF AGR09130EU JESD22-C101A
    Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A

    RM73B2B

    Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A
    Text: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E DS04-154RFPP DS04-030RFPP) RM73B2B gl 3201 AGR09130EF AGR09130EU JESD22-C101A

    WZ150

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 DS03-151RFPP WZ150

    Z921

    Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130EU AGR09130EF Z921 transistor MARKING NC KRC MOSFET 930 06 ng

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief July 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E AGR09130E capabl0-712-4106) PB03-155RFPP

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM