AGR21045EF
Abstract: AGR21045XF JESD22-C101A
Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and
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AGR21045EF
AGR21045EF
DS04-241RFPP
DS04-178RFPP)
AGR21045XF
JESD22-C101A
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AGR21045E
Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf
Text: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045E
AGR21045EU
AGR21045EF
car18109-9138
DS04-178RFPP
DS04-164RFPP)
AGR21045EF
AGR21045EU
JESD22-C101A
178rf
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AGR21045E
Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21045E
AGR21045E
AGR21045EU
AGR21045EF
DS04-164RFPP
DS04-037RFPP)
AGR21045EF
AGR21045EU
JESD22-C101A
100B8
Agere Systems
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AGR21045E
Abstract: AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent
Text: Preliminary Data Sheet November 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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PDF
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AGR21045E
AGR21045E
AGR21045EU
AGR21045EF
DS04-037RFPP
DS02-380RFPP)
AGR21045EF
AGR21045EU
JESD22-C101A
IMD3 equivalent
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