J161 mosfet transistor
Abstract: MOSFET J161 100B6R8JW
Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS03-070RFPP
DS02-276RFPP)
J161 mosfet transistor
MOSFET J161
100B6R8JW
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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AGR21090E
AGR21090EU
AGR21090EF
DS04-018RFPP
DS03-070RFPP)
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J299
Abstract: No abstract text available
Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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AGR21090E
AGR21090EU
AGR21090EF
DS04-059RFPP
DS04-018RFPP)
J299
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AGR21090E
Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz
Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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AGR21090E
AGR21090E
AGR21090EU
AGR21090EF
1090EF
AGR21090XF
M-AGR21090F
12-digit
AGR21090EF
JESD22-C101A
mosfet 6 ghz
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AGR21090
Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
Text: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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AGR21090E
AGR21090E
AGR21090EU
AGR21090EF
DS04-165RFPP
DS04-059RFPP)
AGR21090
mosfet j460
AGR21090EF
JESD22-C101A
mosfet J442
100b6r8
100B8
100B6R8JW
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AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
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CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet January 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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AGR21090E
AGR21090EU
AGR21090EF
DS02-276RFPP
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PDF
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