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Advanced Semiconductor Inc AGR26125EF RF MOSFET Transistors 2.5-2.7GHz 20Watt Gain 11.5dB
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Mouser Electronics	AGR26125EF					1 - 10 $91.81 100 $87.98 1000 $87.98 10000 $87.98	Get Quote

AGR26125E Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR26125E		TriQuint Semiconductor	125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR26125EF		Agere Systems	125 W, 2.535 GHz - 2.655 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR26125EF		TriQuint Semiconductor	125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR26125EF-DB		Agere Systems	MOSFET		Original	PDF
AGR26125EU		Agere Systems	125 W, 2.535 GHz - 2.655 GHz, N-Channel E-Mode, Lateral MOSFET		Original	PDF
AGR26125EU-DB		Agere Systems	MOSFET		Original	PDF

AGR26125E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
F1 J37 Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz Text: Preliminary Data Sheet August 2004 AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EF AGR26125EU DS04-111RFPP F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz	PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Brief December 2003 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	AGR26125E AGR26125EU AGR26125EF AGR261g PB03-192RFPP	PDF
c7a series vishay capacitor Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF c7a series vishay capacitor F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR	PDF
AGR26125E Abstract: AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A Text: Preliminary Product Brief April 2004 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF PB04-081RFPP PB03-192RFPP) AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A	PDF
F1 J37 Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz Text: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz	PDF
TGA2517 Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint	Original	cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125	PDF
TGA2517 Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4	Original		PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF