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Catalog Datasheet	MFG & Type	Document Tags	PDF
M28W431 Abstract: No abstract text available Text: M28W431 4 Mbit 512Kb x8, Boot Block Low Voltage Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware	Original	M28W431 512Kb 100ns M28W431 AI02149 120ns 150ns	PDF
1N914 Abstract: M28W431 Text: M28W431 4 Mb 512K x 8, Block Erase LOW VOLTAGE FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware	Original	M28W431 100ns TSOP40 M28W431 1N914	PDF
wp 39 Abstract: AN933 M28F211 M28F410 M28F411 M28W231 Text: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.	Original	AN933 M28F2xx M28F4xx T6-U20) wp 39 AN933 M28F211 M28F410 M28F411 M28W231	PDF
1N914 Abstract: M28W431 Text: M28W431 4 Mbit 512Kb x8, Boot Block Low Voltage Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware	Original	M28W431 512Kb 100ns M28W431 TSOP40 1N914	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON MOgtMlIgtLIgtg'ü’M D tgi_M28W431 4 Mb 512K x 8, Block Erase LOW VOLTAGE FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS	OCR Scan	M28W431 100ns TSOP40 M28W431 TSQP40	PDF