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    AN1019

    Abstract: AN928 M48T35 M48T58 M48T59 AI02493
    Text: AN1019 APPLICATION NOTE Second Source for “SNAPHAT” by Using a Dual Footprint By integrating a battery and power switching circuitry in its ZEROPOWER memory devices, STMicroelectronics was the first to develop non-volatile CMOS Static RAM technology. This is conventional, high


    Original     		PDF AN1019 AN1019 AN928 M48T35 M48T58 M48T59 AI02493

    Ablestik 84-1 lmis

    Abstract: XES-0491 Plastic Valox 420 SEO M48T08 QR103 QRSR9401 Ablestik 84-1 SUMIKON lmis
    Text: QRSR9401 QUALIFICATION REPORT ZEROPOWER and TIMEKEEPER SRAM Surface Mounted SNAPHAT Package This document was previously known as QR103. Its purpose is to present the summary of the reliability tests performed to qualify the SNAPHAT housing used for ZEROPOWER and TIMEKEEPER devices


    Original     		PDF QRSR9401 QR103. Ablestik 84-1 lmis XES-0491 Plastic Valox 420 SEO M48T08 QR103 QRSR9401 Ablestik 84-1 SUMIKON lmis

    timekeeper

    Abstract: AN1012 AN968 M48T59 vmebus timekeeper M48T02 M48T18 M48T559 M48T58 application note AN1012
    Text: AN968 APPLICATION NOTE VMEbus TIMEKEEPER Requirements Surface-mount TIMEKEEPER devices, from STMicroelectronics, are designed explicitly for inclusion on CPU boards. A typical arrangement is shown in Figure 1. Figure 1. CPU module with a TIMEKEEPER Device


    Original     		PDF AN968 AI02489 AN968 timekeeper AN1012 M48T59 vmebus timekeeper M48T02 M48T18 M48T559 M48T58 application note AN1012

    a7 surface mount diode

    Abstract: Zeropower AN1019 AN928 M48T35 M48T58 M48T59
    Text: AN1019 APPLICATION NOTE Second Source for “SNAPHAT” by Using a Dual Footprint By integrating a battery and power switching circuitry in its ZEROPOWER memory devices, STMicroelectronics was the first to develop non-volatile CMOS Static RAM technology. This is conventional, high


    Original     		PDF AN1019 a7 surface mount diode Zeropower AN1019 AN928 M48T35 M48T58 M48T59

    battery trace code

    Abstract: AI02493 AN928
    Text: AN928 APPLICATION NOTE SNAPHAT Assembly and Process Control The SNAPHAT assembly process is fully automated so as to produce a highly reliable product consistently in volume. This automated equipment takes advantage of microcomputer controlled robotics to obtain the


    Original     		PDF AN928 battery trace code AI02493 AN928

    Plastic Valox 420 SEO

    Abstract: Ablestik 84-1 lmis
    Text: QRSR9401 QUALIFICATION REPORT ZEROPOWER and TIMEKEEPER SRAM Surface Mounted SNAPHAT Package This document was previously known as QR103 . Its purpose is to present the summary of the reliability tests performed to qualify the SNAPHAT housing used for ZEROPOWER and TIMEKEEPER devices


    Original     		PDF QRSR9401 QR103 Plastic Valox 420 SEO Ablestik 84-1 lmis

    K6X8008T2B-UF55

    Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 K6X8008T2B-UF55 m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    timekeeper

    Abstract: M48T5X application note AN1012 AI02493 an101 vmebus timekeeper AN1012 AN968 M48T02 M48T18
    Text: AN968 APPLICATION NOTE VMEbus TIMEKEEPER Requirements Surface-mount TIMEKEEPER devices, from STMicroelectronics, are designed explicitly for inclusion on CPU boards. A typical arrangement is shown in Figure 1. Figure 1. CPU module with a TIMEKEEPER Device


    Original     		PDF AN968 AI02489 AN968 timekeeper M48T5X application note AN1012 AI02493 an101 vmebus timekeeper AN1012 M48T02 M48T18

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 br1632 br1225

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12