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    Microchip Technology Inc DSC1001AI1-013.1072

    MEMS OSC XO 13.1072MHZ CMOS SMD
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    DigiKey DSC1001AI1-013.1072 1
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    Mouser Electronics DSC1001AI1-013.1072
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    Microchip Technology Inc DSC1001AI1-013.1072 Tube 4,674 4 Weeks
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    NAC DSC1001AI1-013.1072 1
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    Avnet Silica DSC1001AI1-013.1072 6 Weeks 110
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    Microchip Technology Inc DSC1001AI1-013.1072T

    MEMS OSC XO 13.1072MHZ CMOS SMD
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    DigiKey DSC1001AI1-013.1072T 1
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    Mouser Electronics DSC1001AI1-013.1072T
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    Microchip Technology Inc DSC1001AI1-013.1072T Reel 4,674 4 Weeks
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    NAC DSC1001AI1-013.1072T 1
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    Omega Engineering FMA-1620A-I-1.013BAR-0CSTD-BAR

    Mass Flow Meter, One 4-20Ma Out, 1.013Ba |Omega FMA-1620A-I-1.013BAR-0CSTD-BAR
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    Newark FMA-1620A-I-1.013BAR-0CSTD-BAR Bulk 1
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    Omega Engineering FMA-1618A-I-1.013BAR-0CSTD-BAR

    Mass Flow Meter, 200 Sccm, One 4 20 Ma Rohs Compliant: Yes |Omega FMA-1618A-I-1.013BAR-0CSTD-BAR
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    Newark FMA-1618A-I-1.013BAR-0CSTD-BAR Bulk 1
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    Omega Engineering FMA-1604A-I-1.013BAR-0CSTD-BAR

    Mass Flow Meter, 50 Sccm, One 4 20 Ma |Omega FMA-1604A-I-1.013BAR-0CSTD-BAR
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    Newark FMA-1604A-I-1.013BAR-0CSTD-BAR Bulk 1
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    AI1013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "15 GHz" power amplifier 41dBm

    Abstract: AN0017 MO-220
    Text: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 NC D3 NC D4 GND GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 NC 3 22 NC GND 4 21 GND RFIN 5 20 RFOUT GND 6 19 GND NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 GND NC


    Original     		PDF AI1013 AI10131270 ES-CHA6252-QFG "15 GHz" power amplifier 41dBm AN0017 MO-220

    M69KB128AA

    Abstract: BCR10
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz M69KB128AA BCR10

    Untitled

    Abstract: No abstract text available
    Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AA 104MHz

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58PR256J M58PR512J M58PR512JE96Z5E M58PR512J

    LA 7673 diagrams

    Abstract: National PC87591 schematic circuit for bios programer thermistor ttc 103 TTC 103 thermistor PC87591S IO CHIP TTC 474 thermistor FB121 ROHM capacitor TTC 103 ntc thermistor
    Text: March 2002 Revision 1.06 PC87591E, PC87591S and PC87591L LPC Mobile Embedded Controllers General Description The PC87591x interfaces with the host via an LPC interface that provides the host with access to the Keyboard and embedded controller interface channels, integrated functions,


    Original     		PDF PC87591E, PC87591S PC87591L PC87591x PC87591x PC87591L LA 7673 diagrams National PC87591 schematic circuit for bios programer thermistor ttc 103 TTC 103 thermistor PC87591S IO CHIP TTC 474 thermistor FB121 ROHM capacitor TTC 103 ntc thermistor

    schematic circuit for bios programer

    Abstract: LA 7673 diagrams QVC12 TTC 103 ntc thermistor TIS153 thermistor ttc 101 TTC 103 thermistor thermistor ttc 103 NTC TTC 103 thermistor PA 0016
    Text: May 2001 Rev. 1.03 PC87591E and PC87591S LPC Mobile Embedded Controller General Description Like members of National’s SuperI/O family, the PC87591x is PC01 and ACPI compliant. The National Semiconductor PC87591E and PC87591S are highly integrated, embedded controllers with an embedded-RISC core and integrated, advanced functions. Targeted for a wide range of portable applications that use the Low


    Original     		PDF PC87591E PC87591S PC87591x PC87591x. PC87591x CR16B 16-bit schematic circuit for bios programer LA 7673 diagrams QVC12 TTC 103 ntc thermistor TIS153 thermistor ttc 101 TTC 103 thermistor thermistor ttc 103 NTC TTC 103 thermistor PA 0016

    CR10

    Abstract: M58PR001LE M58PR256LE M58PR512LE a*12864
    Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit CR10 M58PR001LE M58PR256LE a*12864

    P46H

    Abstract: TFBGA105
    Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original     		PDF M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit P46H TFBGA105

    BGA149

    Abstract: TFBGA149 BGA107
    Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR


    Original     		PDF NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 256/512Mb x16/x32, TFBGA107 TFBGA149 BGA149 BGA107

    RAS 0510

    Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


    Original     		PDF 256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 LFBGA137 RAS 0510 NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R

    NAND98W3M0

    Abstract: NAND98R3M0 NAND99R NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


    Original     		PDF 256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 TFBGA152 NAND98W3M0 NAND98R3M0 NAND99R NAND98R

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program


    Original     		PDF M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb

    Untitled

    Abstract: No abstract text available
    Text: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes


    Original     		PDF M69KB096AB 104MHz 104MHz

    transistor d1415 pin configuration

    Abstract: F9321 book national semiconductor diode PJ 0416 LA 7673 diagrams Siemens Digital Book F9221 fe8616 F9301 SiEMENS EC 350 99
    Text: Voyager Rev 0.13 Voyager LPC Mobile Embedded Controller General Description Outstanding Features The Voyager is a highly integrated, embedded controller with an embedded-RISC core and integrated, advanced functions. Targeted for a wide range of portable applications that


    Original     		PDF CR16B 16-bit transistor d1415 pin configuration F9321 book national semiconductor diode PJ 0416 LA 7673 diagrams Siemens Digital Book F9221 fe8616 F9301 SiEMENS EC 350 99

    M69KB096AB

    Abstract: synchronous nor flash A0-A21 BCR10 tvs array bare die
    Text: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes


    Original     		PDF M69KB096AB 104MHz 104MHz M69KB096AB synchronous nor flash A0-A21 BCR10 tvs array bare die

    pc97551

    Abstract: National PC87591l Diode P 619 PC MOTHERBOARD schematic diagram protocol OBD 8042 intel kbc Ic 6116 pin configuration details IC 74hcxx PA 0016 sot 363 Package h13
    Text: April 2004 Revision 1.2 PC87591L-N05 LPC Mobile Embedded Controller General Description The National Semiconductor PC87591L-N05 is a highly integrated embedded controller with an embedded RISC core and integrated advanced functions. This device is targeted


    Original     		PDF PC87591L-N05 PC87591L-N05 PC87591L-VPCN05 PC87591L-SLCN05. CR16B 16-bit pc97551 National PC87591l Diode P 619 PC MOTHERBOARD schematic diagram protocol OBD 8042 intel kbc Ic 6116 pin configuration details IC 74hcxx PA 0016 sot 363 Package h13

    siemens F716

    Abstract: f9321 book national semiconductor diode PJ 0416 National PC87591 National PC87591l 74x541 74x377 pj 87 diode TCS 4199
    Text: To all our customers We are pleased to inform you that National Semiconductor Corporation's Advanced PC APC Division joined Winbond Electronics Corporation on May 5th 2005. As a result, in this document “National Semiconductor Corporation” and “National” should be understood as


    Original     		PDF

    National PC87591

    Abstract: TTC 103 thermistor LA 7673 diagrams NTC TTC 103 thermistor TTC 103 ntc thermistor thermistor ttc 103 SIEMENS BST INTEL D 2816 LA 4138 siemens F716
    Text: March 2004 Revision 1.07 PC87591E, PC87591S and PC87591L LPC Mobile Embedded Controllers General Description The PC87591x interfaces with the host via an LPC interface that provides the host with access to the Keyboard and embedded controller interface channels, integrated functions,


    Original     		PDF PC87591E, PC87591S PC87591L PC87591x PC87591x PC87591L National PC87591 TTC 103 thermistor LA 7673 diagrams NTC TTC 103 thermistor TTC 103 ntc thermistor thermistor ttc 103 SIEMENS BST INTEL D 2816 LA 4138 siemens F716

    BGA bga 10x13

    Abstract: NAND FLASH BGA st nand flash application note BGA137 MCP NAND DDR NAND512-M NAND01G-M NAND256-M NAND256R3M0
    Text: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR


    Original     		PDF NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 256/512Mb x16/x32, BGA bga 10x13 NAND FLASH BGA st nand flash application note BGA137 MCP NAND DDR NAND512-M NAND01G-M NAND256-M NAND256R3M0

    Untitled

    Abstract: No abstract text available
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memories PRELIMINARY DATA Features summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant)


    Original     		PDF M58PR256J M58PR512J 108MHz, 66MHz 256Mb 512Mb

    synchronous nor flash

    Abstract: BCR10 M69KB128AB bcr100
    Text: M69KB128AB 128 Mbit 8Mb x16 1.8 V Supply, Burst PSRAM Preliminary Data Feature summary • Supply voltage – VCC = 1.7 to 1.95 V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable operating modes – Asynchronous modes: Random Read, and


    Original     		PDF M69KB128AB synchronous nor flash BCR10 M69KB128AB bcr100

    bc 107 common base h parameters

    Abstract: M58PR256J M58PR512J CR10
    Text: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58PR256J M58PR512J bc 107 common base h parameters M58PR256J M58PR512J CR10

    BCR10

    Abstract: M69KB128AB
    Text: M69KB128AB 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and


    Original     		PDF M69KB128AB 104MHz BCR10 M69KB128AB

    TFBGA105

    Abstract: CR10 M58PR001LE M58PR512LE
    Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original     		PDF M58PR512LE M58PR001LE 512-Mbit TFBGA105 TFBGA105 CR10 M58PR001LE