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B2535LG Abstract: aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*	Original	PDF	MBR2535CTL B2535LG aka B2535LG B2535L B2535L diode B2535L AKA B2535L 220 SCHOTTKY BARRIER RECTIFIER aka MBR2535CTL MBR2535CTLG
B2535LG Abstract: aka B2535LG b2535l B2535L diode b2535 B2535L AKA MBR2535CTLG MBR2535CTL Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*	Original	PDF	MBR2535CTL MBR2535CTL/D B2535LG aka B2535LG b2535l B2535L diode b2535 B2535L AKA MBR2535CTLG MBR2535CTL
B2535LG Abstract: aka B2535LG MBR2535CTLG Text: MBR2535CTL SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total 12.5 A Per Diode Leg Pb−Free Packages are Available*	Original	PDF	MBR2535CTL MBR2535CTL/D B2535LG aka B2535LG MBR2535CTLG
B2535LG Abstract: aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG Text: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	PDF	MBRB2535CTLG, NRVBB2535CTLG MBRB2535CTL/D B2535LG aka B2535LG PPAP MANUAL for automotive industry NRVBB2535CTLG MBRB2535CTLG
aka B2535LG Abstract: NRVBB2535CTLG Text: MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	PDF	MBRB2535CTLG, NRVBB2535CTLG MBRB2535CTL/D aka B2535LG NRVBB2535CTLG
b2535lg Abstract: aka B2535LG b2535 B2535L B2535L diode MBRB2535CTL MBRB2535CTLG MBRB2535CTLT4 MBRB2535CTLT4G 2CW28 Text: MBRB2535CTL Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal	Original	PDF	MBRB2535CTL MBRB2535CTL/D b2535lg aka B2535LG b2535 B2535L B2535L diode MBRB2535CTL MBRB2535CTLG MBRB2535CTLT4 MBRB2535CTLT4G 2CW28