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    ALL HIGH POWER MOSFET TRANSISTOR Search Results

    ALL HIGH POWER MOSFET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    ALL HIGH POWER MOSFET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


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    PFS7323-7329 EN61000-3-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


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    PFS7323-7329 EN61000-3-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


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    PFS7323-7329 EN61000-3-2 PDF

    PFS7328

    Abstract: PFS7323-7329 1N4148 ST PFS7325 PFS7323L PFS7326 PFS7329 PFS7327 circuit diagram electronic choke for tube light PFS7323
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


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    PFS7323-7329 eSIP-16 EN61000-3-2 PFS7328 1N4148 ST PFS7325 PFS7323L PFS7326 PFS7329 PFS7327 circuit diagram electronic choke for tube light PFS7323 PDF

    Untitled

    Abstract: No abstract text available
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


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    PFS7323-7329 EN61000-3-2 PDF

    IC 2 5/TDA 7329

    Abstract: and/TDA 7329
    Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options


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    PFS7323-7329 EN61000-3-2 IC 2 5/TDA 7329 and/TDA 7329 PDF

    TEMPFET

    Abstract: No abstract text available
    Text: APPLICATIONS POWER SEMICONDUCTORS Helmut Hertrich ● More than a MOSFET Klaus Reinmuth Rugged, reliable low-side switches: All-round protection with smart HITFETs HITFET High-Integrated TEMPFET low-side switches are versatile power transistors for switching


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    P-TO-220-5-3 P-TO-220-3-1 TEMPFET PDF

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


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    APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w PDF

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


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    HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES GE PACKAGE ! Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE MODE Class AB


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    HVV1012-2 PDF

    circuit for using uc1725

    Abstract: No abstract text available
    Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power


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    UC1725 UC2725 UC3725 UC1724, circuit for using uc1725 PDF

    Untitled

    Abstract: No abstract text available
    Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power


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    UC1725 UC2725 UC3725 UC1725 UC1724, PDF

    92048

    Abstract: UC3725N DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725
    Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power


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    UC1725 UC2725 UC3725 UC1725 UC1724, 92048 UC3725N DIL-16 PLCC-20 SOIC-16 UC1724 UC2725 UC3725 PDF

    92048

    Abstract: DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725 UC3725 6 pin DIL And Gate
    Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power


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    UC1725 UC2725 UC3725 UC1725 UC1724, 92048 DIL-16 PLCC-20 SOIC-16 UC1724 UC2725 UC3725 6 pin DIL And Gate PDF

    6 pin DIL And Gate

    Abstract: 92048 UC3725 circuit for using uc1725 DIL-16 PLCC-20 SOIC-16 UC1724 UC1725 UC2725
    Text: UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power


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    UC1725 UC2725 UC3725 UC1725 UC1724, UDG-92052 UDG-92053 6 pin DIL And Gate 92048 UC3725 circuit for using uc1725 DIL-16 PLCC-20 SOIC-16 UC1724 UC2725 PDF

    Taiyo 93-R

    Abstract: Taiyo 93-R information 1115 r1b C100 C101 C102 C103 C104 C105 DS 109 B340A
    Text: SC2446 Dual-Phase Single or Two Output Synchronous Step-Down Controllers POWER MANAGEMENT Description Features ‹ 2-Phase synchronous continuous conduction mode The SC2446 is a high-frequency dual synchronous stepdown switching power supply controller. It provides outof-phase high-current output gate drives to all N-channel MOSFET power stages. The SC2446 operates in synchronous continuous-conduction mode. Both phases are


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    SC2446 75mV/-110mV MO-153, TSSOP-28-EDP Taiyo 93-R Taiyo 93-R information 1115 r1b C100 C101 C102 C103 C104 C105 DS 109 B340A PDF

    c38d5

    Abstract: RS3190 amk325bj106mm
    Text: SC2446 Dual-Phase Single or Two Output Synchronous Step-Down Controllers POWER MANAGEMENT Description Features ‹ 2-Phase synchronous continuous conduction mode The SC2446 is a high-frequency dual synchronous stepdown switching power supply controller. It provides outof-phase high-current output gate drives to all N-channel MOSFET power stages. The SC2446 operates in synchronous continuous-conduction mode. Both phases are


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    SC2446 c38d5 RS3190 amk325bj106mm PDF

    1n5819 melf

    Abstract: SCHOTTKY SOD-123 CMSH3-40
    Text: SC2446 Dual-Phase Single or Two Output Synchronous Step-Down Controllers POWER MANAGEMENT Description Features ‹ 2-Phase synchronous continuous conduction mode The SC2446 is a high-frequency dual synchronous stepdown switching power supply controller. It provides outof-phase high-current output gate drives to all N-channel MOSFET power stages. The SC2446 operates in synchronous continuous-conduction mode. Both phases are


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    SC2446 SC2446 TSSOP-28 1n5819 melf SCHOTTKY SOD-123 CMSH3-40 PDF

    CMSH3-40

    Abstract: C100 C101 C102 C103 C104 C105 C106 C107 C108
    Text: SC2446 Dual-Phase Single or Two Output Synchronous Step-Down Controllers POWER MANAGEMENT Description Features ‹ 2-Phase synchronous continuous conduction mode The SC2446 is a high-frequency dual synchronous stepdown switching power supply controller. It provides outof-phase high-current output gate drives to all N-channel MOSFET power stages. The SC2446 operates in synchronous continuous-conduction mode. Both phases are


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    SC2446 75mV/-110mV TSSOP-28 CMSH3-40 C100 C101 C102 C103 C104 C105 C106 C107 C108 PDF

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


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    HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 PDF

    016W

    Abstract: LM3430 LM3430SD LM3430SDX LM3432 mathcad boost SLF7045T-470M90-1P SLF7045T-470M90-1PF capacitor 470 uf 100v
    Text: LM3430 Boost Controller for LED Backlighting General Description Features The LM3430 is a high voltage low-side N-channel MOSFET controller. Ideal for use in a boost regulator, the LM3430 can power the LED backlight in LCD panels, such as in notebook PCs. It contains all of the features needed to implement single


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    LM3430 LM3430 016W LM3430SD LM3430SDX LM3432 mathcad boost SLF7045T-470M90-1P SLF7045T-470M90-1PF capacitor 470 uf 100v PDF

    TOP210PFI equivalent

    Abstract: TOP210 TOP210PFI irf840 mosfet drive circuit diagram IRFP460 full bridge int100s motor controller IRF830 IRFP450 bridge PI-1505-050195 INT100
    Text: Function and Application of the INT100 and INT200-202 APPLICATION NOTE AN-10 The INT100 and INT200/201/202 comprise a family of devices designed to drive N-channel MOSFET transistors in a half bridge configuration. High-voltage integrated technology is


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    INT100 INT200-202 AN-10 INT200/201/202 TOP210PFI equivalent TOP210 TOP210PFI irf840 mosfet drive circuit diagram IRFP460 full bridge int100s motor controller IRF830 IRFP450 bridge PI-1505-050195 PDF

    K1118

    Abstract: k1118 transistor MOSFET transistor k1118 transistor k1118 2SK1603 2SK1723 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S
    Text: High Voltage MOSFETs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all possible designs.


    OCR Scan
    OT-89, T0-220 2SK1488 2SK1865SM 2SK1723 2SK1769 2SK1603 2SK1356 2SK1767 2SK1913 K1118 k1118 transistor MOSFET transistor k1118 transistor k1118 transistor 2SK1603 2SK1118 MOSFET 2SK1358 Transistor Guide transistor SMD 2S PDF

    ufn720

    Abstract: UFN723 UFN721 15AQ
    Text: UFN720 UFN721 UFN722 UFN723 POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance. The Unitrode power MOSFET features all of the advantages of MOS technology such as


    OCR Scan
    UFN720 UFN721 UFN722 UFN723 UFN720 UFN721 UFN722 UFN723 15AQ PDF