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    ALL SIMILAR TRANSISTOR Search Results

    ALL SIMILAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    ALL SIMILAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MPS-6544

    Abstract: MPS6544 MPSH20 MPS6540
    Text: MOTOROLA SC -CDIODES/OPTO 6367255 MOTOROLA SC 34 ] F|b3b75SS 003Ö017 ñ | ~ DIODES/OPTO) 34C 38017 r-3 / -/ ? SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) MPSC6540 DIE NO. — NPN LINE SOURCE — DEL627 This die provides performance similar to that of the following device types:


    OCR Scan     		b3b75SS DEL627 MPS6540 MPS6544 MPS6545 MPS6567 MPSH20 MPSH37 MPSC6540 MPS-6544 PDF

    2SK1976

    Abstract: POWER MOSFET
    Text: Power MOSFET transistors Power MOSFET transistors Features • available in TO-220FP package • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on the PCB • all MOSFETs are manufactured using a similar new process. As a result, the input


    OCR Scan     		O-220FP 2SK1976 2SK2095 2SK2176 2SK2176 POWER MOSFET PDF

    2N4354

    Abstract: 2N3495 MM4000
    Text: MOTOROLA'SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 DEjt,3L?aSS D IODES/OPTO 34C G03ÛD1E T 38012 D SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) die no. MPSAC55 — PNP LINE SOU RCE — DMB158 This die provides performance similar to that of the following device types:


    OCR Scan     		MPSAC55 DMB158 2N34t4 2N3495 2N34M 2N34S7 2N4354* 2N435C* MM4000 MPS4354 2N4354 PDF

    2N3059

    Abstract: MPSU10 MPS-U10 MPSAC42 2N3742 2n5058 2N9517 mp8d motorola opto transistor MM3002
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 f MOTOROLA « r SC ~Im » FJt3t.7SSS <DIODES/OPTO> 34C 003fl011 38011 D * SILICON SM ALL-SIGNAL TRANSISTOR DICE continued MPSAC42 DIE NO. — NPN LINE SOURCE — DMB107 This die provides performance similar to that of the following device types:


    OCR Scan     		003fl011 DMB107 2N3742 2N4826 2N4927 2N5058 2N3059 2N6516 2N9517 2N8557 MPSU10 MPS-U10 MPSAC42 mp8d motorola opto transistor MM3002 PDF

    12v to Amplifier 200w circuit diagrams

    Abstract: 12v to Amplifier 200w schematic diagrams 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM NE5517 200w audio amplifier circuit diagram NE5517N NE5517D 200w power amplifier circuit diagram AU5517
    Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of


    Original     		NE5517, NE5517A, AU5517 AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 12v to Amplifier 200w schematic diagrams 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w audio amplifier circuit diagram NE5517N NE5517D 200w power amplifier circuit diagram PDF

    12v to Amplifier 200w circuit diagrams

    Abstract: 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w stereo audio Amplifier diagram NE5517 NE5517NG 12v to Amplifier 200w schematic diagrams 200w audio amplifier circuit diagram
    Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of


    Original     		NE5517, NE5517A, AU5517 AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 200w power amplifier circuit diagram KT 829 b 200w transistor audio amplifier circuit diagram 12v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM 200w stereo audio Amplifier diagram NE5517NG 12v to Amplifier 200w schematic diagrams 200w audio amplifier circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of


    Original     		NE5517, NE5517A, AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D PDF

    12v to Amplifier 200w circuit diagrams

    Abstract: 12v audio Amplifier 200w schematic diagrams 12v to Amplifier 200w schematic diagrams 200w stereo audio Amplifier diagram NE5517 NE5517AN 200w power amplifier circuit diagram SCHEMATIC 10kw Power Amplifier stereo amplifier 200W 200w transistor audio amplifier circuit diagram
    Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of


    Original     		NE5517, NE5517A, AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D 12v to Amplifier 200w circuit diagrams 12v audio Amplifier 200w schematic diagrams 12v to Amplifier 200w schematic diagrams 200w stereo audio Amplifier diagram NE5517AN 200w power amplifier circuit diagram SCHEMATIC 10kw Power Amplifier stereo amplifier 200W 200w transistor audio amplifier circuit diagram PDF

    NE5517NG

    Abstract: No abstract text available
    Text: NE5517, NE5517A, AU5517 Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of


    Original     		NE5517, NE5517A, AU5517 AU5517 NE5517 AU5517/NE5517 AU5517/NE5517. NE5517/D NE5517NG PDF

    101F

    Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
    Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal


    OCR Scan     		00QMQ41 ACY23 ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbQS 000404b 101F ACY23V ACY32V Q62901-B1 PDF

    ENN6201A

    Abstract: polygon mirror motor HSOP36 LB1876 toc 300 30 FGS
    Text: Ordering number : ENN6201A Monolithic Digital IC LB1876 Three-Phase Brushless Motor Driver for Polygon Mirror Motors Overview Package Dimensions The LB1876 is a driver for polygon mirror motors such as used in laser printers and similar equipment. It incorporates all necessary circuitry speed control +


    Original     		ENN6201A LB1876 LB1876 235A-HSOP36 LB1876] 45max ENN6201A polygon mirror motor HSOP36 toc 300 30 FGS PDF

    AT73C202

    Abstract: battery mobile phone charger operation of mobile charger
    Text: P OWER M ANAGEMENT AT73C202 POWER MANAGEMENT UNIT BATTERY AND FOR P RODUCTS M OBILE P HONES AND W IRELESS P LATFORMS Integrates in a single IC all the power management circuitry required for cellular phones and similar Image: Studio Haz'art devices. l l l


    Original     		AT73C202 AT73C202. 49balls battery mobile phone charger operation of mobile charger PDF

    GP500

    Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
    Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.


    OCR Scan     		ACY33 ACY33 --Y33 Q60103 GP500 bnsu germanium af transistors Germanium Transistor transistor ACY PNP PDF

    LT1084 ADJ

    Abstract: No abstract text available
    Text: Designing with 1.5-V Devices September 2002 , ver. 1.0 Introduction Application Note 257 The CycloneTM FPGA family provides the best solution for high-volume, cost-sensitive applications. Similar to StratixTM devices, Cyclone devices are fabricated on a leading-edge 1.5-V, 0.13-µm, all-layer copper SRAM


    Original     		PDF

    2N3640

    Abstract: MPS4258 2N5228 2n3639 MPS3640 2n4208 2N4209 2N36 2N4209 die transistor 2N3640
    Text: MOTORO LA SC {D IO DES/ OPT O} 6367255 MOTOROLA 34 SC DE | L.3b7255 0Q3Ô QD7 5 | ~ CDIODES/OPTO 34C 3800 7 D T~ 3 7 “/ST SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) MMC4209 DIE NO. — PNP LINE SOURCE — DSL345 f4 This die provides performance similar to that of the following device types:


    OCR Scan     		3b7255 DSL345 MMC4209 2N3639* 2N3640* 2N4208 2N4209 2N5228* 2N5771 MM4208 2N3640 MPS4258 2N5228 2n3639 MPS3640 2N36 2N4209 die transistor 2N3640 PDF

    2N5681 MOTOROLA

    Abstract: SILICON DICE motorola DSL212
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC ^ I>E |b 3 b 7 2 5 5 0033005 1 DIODES/OPTO 34C 38005 D f-a i-n SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) 2C5682 DIE NO. — NPN LINE SOURCE — DSL212 T h is die provides perform ance similar to that of the following device types:


    OCR Scan     		DSL212 2N5681 2NS682 2C5682 2N5681 MOTOROLA SILICON DICE motorola DSL212 PDF

    Motorola MPSU45

    Abstract: transistor mpsu45 MPSU45 transistor - MM6427 MM6427 MPS-U45 transistor motorola SILICON DICE motorola MPSAC13 similar mpsa14
    Text: MOTOROLA SC { DIODES/O PTO } 6367255 MOTOROLA • SC 34 D E | b3b?25S 003fl0CH DIO DES/O PTO 34C 38009 D T -2 9 - 2 9 ■■ SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) MPSAC13 DIE NO. — NPN LINE SOURCE — DMB109 iSl This die provides performance similar to that of the following device types:


    OCR Scan     		003fl0CH DMB109 MPSAC13 2N6426 2N6427 2N6548 2N6549 MM6427 MPSA12 MPSA13 Motorola MPSU45 transistor mpsu45 MPSU45 transistor - MM6427 MPS-U45 transistor motorola SILICON DICE motorola MPSAC13 similar mpsa14 PDF

    Untitled

    Abstract: No abstract text available
    Text: FORM AE043 ISS2 PRODUCT DATA SHEET Comus Group of Companies 50.8 38.0 20.3 32.0 4.7ø Adjustment 300.0 Drawings not to scale All dimensions in mm This omni-directional motion sensor has been designed to sense small vibrations and movements. The sensitivity is adjustable. The output is referenced to OV and can drive a transistor or similar device.


    Original     		AE043 MS24A/30 PDF

    Untitled

    Abstract: No abstract text available
    Text: ALL E GR O MICROSYSTEMS INC S3 D • □SDMSSfl D0G37L.1 S ■ AL GR T-91-01 PROCESS NJ32 Process NJ32 N-Channel Junction Field-Effect Transistor Process NJ32 is an N-channel junction field-effect transistor designed for use as a general-purpose audio amplifier. It is similar to Process NJ16 in basic


    OCR Scan     		D0G37L T-91-01 PDF

    2n2712

    Abstract: transistor 2n3391 2N2711 2N3398 2N3394 2N2923 2n2925 2N3395 2N3397 T0-92B
    Text: iv lJ r à / z r N ^ y u c n ru j o y o and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are N P N silicon planar epitaxial transistors for use in A F sm all am plifiers and direct coupled circuits. CASE T 0-92A Their maximum pow er dissipation


    OCR Scan     		160mW T0-92A T0-92B MPS/2N2711 UMPS/2N2712 12pPii@ MPS/2N2716 UPS/2N2923 MPS/2N2924 UPS/2N2925 2n2712 transistor 2n3391 2N2711 2N3398 2N3394 2N2923 2n2925 2N3395 2N3397 PDF

    transistor k520

    Abstract: IC K520 transistor ACY PNP acy transistor 1518 B TRANSISTOR ACY23 ACY23V ACY32 Q60103-Y23-E Q60103-Y23-F
    Text: 2SC D 023SbGS GGOMOMl H M S I E G • , _ PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ACY 23 15C 04041 D f t C YA 2 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to TO-1 . All leads are electrically insulated from the case. The collector terminal


    OCR Scan     		ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbOS QQQ404b ACY23 transistor k520 IC K520 transistor ACY PNP acy transistor 1518 B TRANSISTOR ACY23V ACY32 Q60103-Y23-E Q60103-Y23-F PDF

    MPSA06 transistor

    Abstract: MPS-8000 mps-a06 MPSA05 motorola SILICON DICE motorola
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 &F|t.3b72SS 0030000 7 CDIODES/OPTO 3 ^c SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) D IE N O . MPSAC05 — LIN E S O U R C E — T ' 2 38008 2- / NPN D M B 1 08 This die provides performance similar to that of the following device types:


    OCR Scan     		3b72SS MPSAC05 MPS3402 MPS8000 MPSA05 MPSA06 MPSA06 transistor MPS-8000 mps-a06 MPSA05 motorola SILICON DICE motorola PDF

    2N4239 MOTOROLA

    Abstract: SL244 SILICON DICE motorola 2N4237 MOTOROLA
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 DE | b 3 L 7 2 5 5 □037^15 4 DIODES/OPTO 3^C SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) 37995 T ~ 2.? ' 2- 3 2C4239 DIE N O . — NPN LINE S O U R C E — D SL244 This die provides performance similar to that of the following device types:


    OCR Scan     		SL244 2C4239 2N4237 2N4238 2N4239 MM440 2N4239 MOTOROLA SL244 SILICON DICE motorola 2N4237 MOTOROLA PDF

    2N915

    Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
    Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:


    OCR Scan     		DMB105 2C3904 2N915 2N916 2N2716* 2N2923 2N2924 2N2925 2N2926* 2N3390* 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392 PDF