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    ALL TRANSISTOR DATA BOOK Search Results

    ALL TRANSISTOR DATA BOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ALL TRANSISTOR DATA BOOK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3554

    Abstract: data transistor nec
    Text: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SC3554 D17970EJ3V0DS00 TC-1644A) D17970EJ3V0DS 2SC3554 data transistor nec

    2SD1950

    Abstract: C1987 NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SD1950 D17976EJ3V0DS00 TC-1894A) D17976EJ3V0DS 2SD1950 C1987 NEC Systems

    2SD1614

    Abstract: NEC silicon epitaxial power transistor NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SD1614 D17973EJ3V0DS00 TC-1649A) D17973EJ3V0DS 2SD1614 NEC silicon epitaxial power transistor NEC Systems

    1115a

    Abstract: D1794 2SB1115 1115A ics NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SB1115, 1115A PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SB1115, D17940EJ3V0DS00 TC-1624A) 2SB1115 D17940EJ3V0DS 1115a D1794 1115A ics NEC Systems

    2sc3618 application

    Abstract: NEC diode nec transistor 2SC3618
    Text: DATA SHEET SILICON TRANSISTOR 2SC3618 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SC3618 D17971EJ3V0DS00 TC-1641A) D17971EJ3V0DS 2sc3618 application NEC diode nec transistor 2SC3618

    TC1628

    Abstract: D1793 2SB1114 NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SB1114 D17936EJ3V0DS00 TC-1628A) D17936EJ3V0DS TC1628 D1793 2SB1114 NEC Systems

    2SD1006

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SD1006, D17972EJ4V0DS00 TC-1369B) D17972EJ4V0DS 2SD1006

    nec speed grade

    Abstract: nec transistor 2SA1463
    Text: DATA SHEET SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SA1463 D17935EJ3V0DS00 TC-1889A) D17935EJ3V0DS nec speed grade nec transistor 2SA1463

    2SC3617

    Abstract: TC1640 NEC Systems
    Text: DATA SHEET SILICON TRANSISTOR 2SC3617 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD <R> <R> <R> <R> <R> The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics


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    PDF 2SC3617 D17913EJ3V0DS00 TC-1640A) 2SC3617 TC1640 NEC Systems

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2802 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 10 mΩ MAX. (VGS = 4.5 V, ID = 9 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are


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    PDF PA2802

    PA2801

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2801 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 8 7 6 5 3 4 0.32±0.05 RDS on 2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Thin type surface mount package with heat spreader • RoHS Compliant 0.35 0.2 MAXIMUM RATINGS (TA = 25°C, All terminals are


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    PDF PA2801 PA2801

    all transistor book

    Abstract: mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A


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    PDF M3D259 BLS3135-50 BLS3135-50 OT422A BLS313550 all transistor book mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PINNING FEATURES


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    PDF M3D379 BLF1820-90 15-Aug-02) TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3

    smd transistor marking C14

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-70 PINNING FEATURES


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    PDF M3D379 BLF1820-70 BLF1820-70 MBK394 15-Aug-02) smd transistor marking C14

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 FEATURES PINNING - SOT502A


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    PDF M3D379 BLF2022-90 BLF2022-90 OT502A 15-Aug-02)

    smd transistor marking C14

    Abstract: TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd code marking C8 all transistor book
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 FEATURES PINNING - SOT502A


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    PDF M3D379 BLF2022-70 BLF2022-70 OT502A 15-Aug-02) smd transistor marking C14 TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd code marking C8 all transistor book

    TRANSISTOR SMD MARKING CODE DK

    Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT


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    PDF M3D088 PDTA143ZT PDTC143ZT. 01-May-99) TRANSISTOR SMD MARKING CODE DK 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    opto d213

    Abstract: d213 opto MOCD213 T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface


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    PDF MOCD213 opto d213 d213 opto MOCD213 T

    D217 OPTO

    Abstract: MOCD217 opto D217
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline O ptoisolators MOCD217 Transistor Output Low Input Current [CTR* 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a


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    PDF MOCD217 RS481A MOCD217 TA-25 D217 OPTO opto D217

    MOC211

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC211 MOC212 M OC213 Sm all Outline O ptoisolators [CTR - 2 0 % Min] Transistor Output {CTR = 6 0 % Min] These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable,


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    PDF RS481A E54915 MOC212 MOC213 MOC211

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.


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    PDF 2SC3582 2SC3582

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA805T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD PACKAGE DRAWINGS FEATU RES • Low N oise, H igh Gain • O p e ra b le at Low V o lta g e • S m all Feed-back C apacitance


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    PDF uPA805T 2SC4958) IPA805T iPA805T-T1

    S481A

    Abstract: opto d213
    Text: MOTOROLA Order this document by MOCD213/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all O utline O ptoisolator MOCD213 Transistor Output [C TR = 100% Min] T his de vice c on sists o f tw o g a llium arse nide infrared em itting d iod es o p tically c o u p le d to tw o m o n o lith ic s ilic o n p h o to tra n s is to r d e te c to rs , in a s u rfa c e


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    PDF MOCD213/D S481A opto d213