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    ALPHA GUNN OSCILLATORS Search Results

    ALPHA GUNN OSCILLATORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MK3200SILFTR Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation
    HSP45116AVC-52 Renesas Electronics Corporation Numerically Controlled Oscillator/Modulator Visit Renesas Electronics Corporation
    HSP45116AVC-52Z Renesas Electronics Corporation Numerically Controlled Oscillator/Modulator Visit Renesas Electronics Corporation
    MK3200SLF Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation
    MK3200SLFTR Renesas Electronics Corporation 32.768KHz Clock Oscillator Visit Renesas Electronics Corporation

    ALPHA GUNN OSCILLATORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    128-QAM

    Abstract: 128QAM gunn diode datasheet PDH/SDH 15 GHz power amplifier Output Power 37dBm parameters needed to specify noise performance of microwave amplifier mpt1420 Gunn Diode millimeter gunn diode gunn diode 2- 3Ghz
    Text: Linearity Requirements for MMICs for 16 through 128QAM ETSI Compliant Radios Dr. Jim Harvey, Mimix Broadband This paper highlights some of the regulatory and operational issues which influence linearity requirements and frequency planning aspects of high frequency microwave radios used for point to point or point to multipoint systems. While in the US,


    Original     		PDF 128QAM 128-QAM 128QAM gunn diode datasheet PDH/SDH 15 GHz power amplifier Output Power 37dBm parameters needed to specify noise performance of microwave amplifier mpt1420 Gunn Diode millimeter gunn diode gunn diode 2- 3Ghz

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		PDF AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO

    gunn diodes

    Abstract: alpha GUNN OSCILLATORS DGB8381 DGB8625 Gunn Diode x-band DGB8332 gunn x-band gunn diode DGB7131 DGB8281
    Text: ALPHA IN » / SEMICONDUCTOR 4ÔE D • 0SÔ5443 00013=15 fln ■ ALP _ Gunn Diodes To~f-\ \ Features ■ ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications


    OCR Scan     		PDF power001 gunn diodes alpha GUNN OSCILLATORS DGB8381 DGB8625 Gunn Diode x-band DGB8332 gunn x-band gunn diode DGB7131 DGB8281

    CMD1210

    Abstract: No abstract text available
    Text: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts


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    Untitled

    Abstract: No abstract text available
    Text: Gunn Diodes Features • ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications High Reliability Special Screening to Customer Requirements Available Description


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    Gunn Diode symbol

    Abstract: Gunn Diode impatt diagram of gunn diode 00Q13CH DVE6900 DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct
    Text: ALPHA IND/ SEMICONDUCTOR MAE D • DSfiSHHB 00Q13CH ES2 * A L P High Q GaAs Tuning Diodes -T - C TM «t Features ■ ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types ■ ■ DVE4500 Series DVE6900 Series


    OCR Scan     		PDF 00Q13CH DVE4500 DVE6900 di4576 DVE4555 DVE6951 DVE6952 DVE6953 DVE6954 DVE6955 Gunn Diode symbol Gunn Diode impatt diagram of gunn diode DIODE in 5060 GaAs Gunn Diode varactor alpha 2025 ct

    diode Catalog

    Abstract: diagram of gunn diode GUNN OSCILLATORS Gunn Diode DVE4554 DVE6950 GaAs Gunn Diode 082001 varactor alpha impatt diode
    Text: , □3 D eT | 0 5 0 5 4 4 3 0585443 DOOOSOB 2 ALPHA IND/ | _ SEMICONDUCTOR 03E 00503 D I " 7 “ High-“Q ” GaAs 45 Volt Series Tuning Diodes Features • 100% Higher “ Q” Than Comparable Silicon Diodes • WirlfiTi ininn Ratio Wide Tuning High Reliability and Space Qualified


    OCR Scan     		PDF D000S03 DVE6950 cavity-001 DSfl5443 0DDS04 D5A5443 diode Catalog diagram of gunn diode GUNN OSCILLATORS Gunn Diode DVE4554 GaAs Gunn Diode 082001 varactor alpha impatt diode

    diode Catalog

    Abstract: impatt diode DVE4554 Gunn Diode impatt GaAs Gunn Diode DVE4550 DVE4575 DVE4570 S443
    Text: 03 IND/ S E M I C O N D U C T O R 0585443 ALPHA DE'B 05Û5443 0DDD 5DD 7 1 ~ 0 3E 00 50 0 D t " 0 7 - / 9 High-“Q ” GaAs 25 Volt Series Tuning Diodes & & Features & • 50% Higher “ Q” Than Comparable Silicon Diodes • Wide Tuning Ratio • High Reliability and Space Qualified


    OCR Scan     		PDF DVE4550 DVE4570 0SflS443 oSfl5443 diode Catalog impatt diode DVE4554 Gunn Diode impatt GaAs Gunn Diode DVE4575 S443

    diagram of gunn diode

    Abstract: GUNN OSCILLATORS DVE4575 diodes tvb IMPATT
    Text: High Q GaAs Tuning Diodes Features • ■ ■ 50 Percent Higher Q than Comparable Silicon Diodes Wide Tuning Ratio 25 and 45 Volt Series Types -J* DVE4500 Series DVE6900 Series Description The Alpha line of gallium arsenide tuning diodes offers the circuit designer expanded capability. The


    OCR Scan     		PDF DVE4500 DVE6900 DVE6951 DVE6952 DVE6953 DVE6954 DVE6955 diagram of gunn diode GUNN OSCILLATORS DVE4575 diodes tvb IMPATT

    GaAs Gunn Diode "94 GHz"

    Abstract: varactor diode high frequency 2.4 GHZ Gunn Diode millimeter gunn diode D5008-18 D5256-06 D5244-06 D5244-12 Parametric Varactor diodes D5244-24
    Text: ALPHA INI/ SEMICONDUCTOR I48E D • O S M H U a 0001374 73T « A L P T„7-ll GaAs Multiplier Diodes for Millimeter Waves Features ■ Efficient Multiplication to 94 GHz ■ Millimeter Wave Packages ■ High Reliability and Space Qualified MTTF Determination


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    millimeter gunn diode

    Abstract: D5018-24 GUNN OSCILLATORS Frequency Tripler varactor Parametric Varactor diodes
    Text: GaAs Multiplier Diodes for Millimeter Waves Features m • Efficient Multiplication to 94 GHz ■ Millimeter W ave Packages ■ High Reliability and Space Qualified 1* % Description MTTF Determination Alpha offers a line of Gallium Arsenide multiplier varactors specifically designed for low order multiplication


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    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    THERMISTORS nsp 037

    Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
    Text: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.


    OCR Scan     		PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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    stepping motor EPSON EM - 234

    Abstract: EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A
    Text: Issued March 1988 8773 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B. T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


    OCR Scan     		PDF RS232 RS232C stepping motor EPSON EM - 234 EPSON motor em 402 induction cooker fault finding diagrams ECG transistor replacement guide book free stepping motor EPSON EM 234 stepping motor EPSON em 331 S576B transistor d389 maranyl TMS1601A

    DIL Reed relay RS -349-399

    Abstract: LK NES IEC 292-1 ECG transistor replacement guide book free electrode oven calibration certificate formats dl-1d31 1a. 250v /reed relay rs 349-355 LCD LM 225X Ferroxcube pot core 6656 Semicon volume 1 l/DIL Reed relay RS -349-399 Siemens Optoelectronic Data Book
    Text: Issued November 1987 8420 Data Library Contents list and semiconductor device type index Data library contents Subject Title Number Communications Equipment B.T. telephone connection system Digital compact paging system Escort 2 + 6 telephone switching system


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